摘要:
A method includes destructively reading bits of a spin torque magnetic random access memory and immediately writing back the original or inverted values. A detection of the majority state of the write back bits and a conditional inversion of write back bits are employed to reduce the number of write back pulses. A subsequent write command received within a specified time or before an original write operation is commenced will cause a portion of the write back pulses or the original write operation pulses to abort. Write pulses during subsequent write operations will follow the conditional inversion determined for the write back bits during destructive read.
摘要:
A method of and a system for extracting 3D bag images from continuously reconstructed 2D image slices are provided. The method detects the boundaries of baggage in the reconstructed images, and provides better flexibilities for threat detection and displaying. The method comprises detecting starting and ending slices using multiple slices, counting bag slices, splitting 3D bag images when maximum number of slices of a 3D bag image is reached, and creating overlapping slices for the split 3D bag images.
摘要:
A method of and a system for spectral correction in multi-energy computed tomography are provided to correct reconstructed images, including high-energy CT images and Z (effective atomic number) images, for spectral variations, which include time variations on a scanner due to HVPS drift and scanner to scanner variations due to the beamline component differences. The method uses a copper filter mounted on the detector array for tracking the spectral changes. The method comprises: generating copper ratios; computing working air tables; calculating scales and offsets; and correcting high-energy CT images and Z images using calculated scales and offsets. The method further includes an off-line calibration procedure to generate necessary parameters for the online correction.
摘要:
A magnetoresistive random access memory (MRAM) has separate read and write paths. This reduces the peripheral circuitry by not requiring switching between read and write functions on a particular line. By having the paths dedicated to either read signals or write signals, the voltage levels can be optimized for these functions. The select transistors, which are part of only the read function, may be of the low-voltage type because they do not have to receive the relatively higher voltages of the write circuitry. Similarly, the write voltages do not have to be degraded to accommodate the lower-voltage type transistors. The size of the overall memory is kept efficiently small while improving performance. The memory cells are grouped so that adjacent to groups are coupled to a common global bit line which reduces the space required for providing the capacitance-reducing group approach to memory cell selection.
摘要:
A method for processing a conductive layer, such as a doped polysilicon layer (14) of a gate stack, provides a degas step after precleaning to reduce particle count and defectivity. The conductive layer is provided on a substrate (10), e.g., a silicon wafer. The substrate (10) and conductive layer are subjected to an elevated temperature, under a vacuum, whereby certain species are liberated. The substrate having the conductive layer formed thereon is then removed from the chamber, and moved to a second, separate chamber, in which a second conductive layer (20) is deposited. By switching chambers, the liberated species are largely prevented from contributing to particle count at the interface between the conductive layers. Alternatively, the second conductive layer is formed in the same chamber, provided that the liberated species are removed from the chamber prior to deposition of the second conductive layer.
摘要:
A semiconductor device (10) is formed having an SRAM array with a plurality of SRAM cells. In forming the access and latch transistors, two different gate electrode compositions are used to form the access and latch transistors. More specifically, a dielectric layer (22) is formed between two conductive layers (26 and 28) within the gate electrode (52) for the access transistors while the dielectric layer is not formed between the two conductive layers (26 and 28) for the latch transistors. This structure allows an increase in the beta ratio for the SRAM cell thereby making a more stable SRAM cell without having to use diffused resistors between the access transistors in storage nodes or by having to form a differential thickness between the gate dielectric layers for the latch transistors and the access transistors.
摘要:
Radiation flux can be adjusted “on the fly” as an object (204) is being scanned in a security examination apparatus. Adjustments are made to the radiation flux based upon radiation incident on a first radiation detector (226) in an upstream portion (233) of an examination region. The object under examination is thus exposed to different radiation flux in coordination with a downstream motion (235) of the object relative to a second radiation detector (228). The radiation flux is adjusted so that a sufficient number of x-rays (that traverse the object) are incident on the second radiation detector. Images of the object can then be generated based upon data from the second radiation detector, where these images are thus of a desired/higher quality.
摘要:
A method includes destructively reading bits of a spin torque magnetic random access memory and immediately writing back the original or inverted values. A detection of the majority state of the write back bits and a conditional inversion of write back bits are employed to reduce the number of write back pulses. A subsequent write command received within a specified time or before an original write operation is commenced will cause a portion of the write back pulses or the original write operation pulses to abort. Write pulses during subsequent write operations will follow the conditional inversion determined for the write back bits during destructive read.
摘要:
A method includes destructively reading bits of a spin torque magnetic random access memory and immediately writing back the original or inverted values. A detection of the majority state of the write back bits and a conditional inversion of write back bits are employed to reduce the number of write back pulses. A subsequent write command received within a specified time or before an original write operation is commenced will cause a portion of the write back pulses or the original write operation pulses to abort. Write pulses during subsequent write operations will follow the conditional inversion determined for the write back bits during destructive read.
摘要:
A method includes destructively reading bits of a spin torque magnetic random access memory and immediately writing back the original or inverted values. A detection of the majority state of the write back bits and a conditional inversion of write back bits are employed to reduce the number of write back pulses. A subsequent write command received within a specified time or before an original write operation is commenced will cause a portion of the write back pulses or the original write operation pulses to abort. Write pulses during subsequent write operations will follow the conditional inversion determined for the write back bits during destructive read.