-
公开(公告)号：US20150006997A1
公开(公告)日：2015-01-01
申请号：US14452071
申请日：2014-08-05
CPC分类号： G11C11/1675 , G06F11/1048 , G06F11/1076 , G11C11/00 , G11C11/16 , G11C11/1673 , G11C11/1693 , G11C2013/0076 , G11C2029/0411
摘要： A method includes destructively reading bits of a spin torque magnetic random access memory and immediately writing back the original or inverted values. A detection of the majority state of the write back bits and a conditional inversion of write back bits are employed to reduce the number of write back pulses. A subsequent write command received within a specified time or before an original write operation is commenced will cause a portion of the write back pulses or the original write operation pulses to abort. Write pulses during subsequent write operations will follow the conditional inversion determined for the write back bits during destructive read.
摘要翻译： 一种方法包括破坏性地读取自旋扭矩磁随机存取存储器的位并立即写回原始值或反相值。 采用回写位的多数状态的检测和回写位的条件反转来减少回写脉冲的数量。 在指定时间内或在原始写入操作开始之前接收到的后续写入命令将导致回写脉冲的一部分或原始写入操作脉冲中止。 在后续写入操作期间的写入脉冲将遵循在破坏性读取期间为回写位确定的条件反演。
-
2.发明授权Method of and system for extracting 3D bag images from continuously reconstructed 2D image slices in computed tomography 有权在计算机断层扫描中从连续重建的2D图像切片中提取3D袋图像的方法和系统公开(公告)号：US07327853B2
公开(公告)日：2008-02-05
申请号：US10864619
申请日：2004-06-09
申请人： Zhengrong Ying , Chitra Subramanian , Anuradha Aiyer , Nima Shokrollahi , Govindarajan T. Srinivasan , Carl R. Crawford
发明人： Zhengrong Ying , Chitra Subramanian , Anuradha Aiyer , Nima Shokrollahi , Govindarajan T. Srinivasan , Carl R. Crawford
CPC分类号： G01T1/2985 , G01V5/0041 , G01V5/005 , G06K9/4638 , G06K2209/09 , G06K2209/40 , G06T7/11 , G06T7/136 , G06T2207/10081 , G06T2207/30112
摘要： A method of and a system for extracting 3D bag images from continuously reconstructed 2D image slices are provided. The method detects the boundaries of baggage in the reconstructed images, and provides better flexibilities for threat detection and displaying. The method comprises detecting starting and ending slices using multiple slices, counting bag slices, splitting 3D bag images when maximum number of slices of a 3D bag image is reached, and creating overlapping slices for the split 3D bag images.
摘要翻译： 提供了一种用于从连续重建的2D图像切片中提取3D袋图像的方法和系统。 该方法检测重建图像中行李的边界，为威胁检测和显示提供更好的灵活性。 该方法包括使用多个切片检测开始和结束切片，计数袋切片，在达到3D袋图像的最大切片数量时分割3D袋图像，以及为分割的3D袋图像创建重叠切片。
-
3.发明申请Method of and system for X-ray spectral correction in multi-energy computed tomography 有权多能计算机断层扫描中X射线光谱校正的方法和系统公开(公告)号：US20060023844A1
公开(公告)日：2006-02-02
申请号：US10899775
申请日：2004-07-27
IPC分类号： H05G1/00
CPC分类号： G01N23/046 , G01N2223/419 , G01T1/185
摘要： A method of and a system for spectral correction in multi-energy computed tomography are provided to correct reconstructed images, including high-energy CT images and Z (effective atomic number) images, for spectral variations, which include time variations on a scanner due to HVPS drift and scanner to scanner variations due to the beamline component differences. The method uses a copper filter mounted on the detector array for tracking the spectral changes. The method comprises: generating copper ratios; computing working air tables; calculating scales and offsets; and correcting high-energy CT images and Z images using calculated scales and offsets. The method further includes an off-line calibration procedure to generate necessary parameters for the online correction.
摘要翻译： 提供了一种用于多能量计算机断层摄影中的光谱校正的方法和系统，用于校正重建图像，包括高能CT图像和Z（有效原子序数）图像，用于光谱变化，包括扫描仪上的时间变化，由于 HVPS漂移和扫描仪由于束线分量差异而导致扫描仪变化。 该方法使用安装在检测器阵列上的铜过滤器来跟踪光谱变化。 该方法包括：产生铜比; 计算工作台面; 计算比例和偏移量; 并使用计算的比例和偏移校正高能CT图像和Z图像。 该方法还包括离线校准程序以产生用于在线校正的必要参数。
-
公开(公告)号：US20050152183A1
公开(公告)日：2005-07-14
申请号：US11076523
申请日：2005-03-09
申请人： Joseph Nahas , Thomas Andre , Chitra Subramanian , Bradley Garni , Mark Durlam
发明人： Joseph Nahas , Thomas Andre , Chitra Subramanian , Bradley Garni , Mark Durlam
CPC分类号： G11C11/16
摘要： A magnetoresistive random access memory (MRAM) has separate read and write paths. This reduces the peripheral circuitry by not requiring switching between read and write functions on a particular line. By having the paths dedicated to either read signals or write signals, the voltage levels can be optimized for these functions. The select transistors, which are part of only the read function, may be of the low-voltage type because they do not have to receive the relatively higher voltages of the write circuitry. Similarly, the write voltages do not have to be degraded to accommodate the lower-voltage type transistors. The size of the overall memory is kept efficiently small while improving performance. The memory cells are grouped so that adjacent to groups are coupled to a common global bit line which reduces the space required for providing the capacitance-reducing group approach to memory cell selection.
-
5.发明授权
公开(公告)号：US6136678A
公开(公告)日：2000-10-24
申请号：US33422
申请日：1998-03-02
申请人： Olubunmi Adetutu , James D. Hayden , Chitra Subramanian , Archana Redkar , Anthony Mark Miscione , Mark G. Fernandes
发明人： Olubunmi Adetutu , James D. Hayden , Chitra Subramanian , Archana Redkar , Anthony Mark Miscione , Mark G. Fernandes
IPC分类号： C23C16/02 , H01L21/28 , H01L21/321 , H01L29/49 , H01L21/3205 , H01L21/4763
CPC分类号： H01L21/28247 , C23C16/0227 , H01L21/28061 , H01L21/321 , H01L29/4933
摘要： A method for processing a conductive layer, such as a doped polysilicon layer (14) of a gate stack, provides a degas step after precleaning to reduce particle count and defectivity. The conductive layer is provided on a substrate (10), e.g., a silicon wafer. The substrate (10) and conductive layer are subjected to an elevated temperature, under a vacuum, whereby certain species are liberated. The substrate having the conductive layer formed thereon is then removed from the chamber, and moved to a second, separate chamber, in which a second conductive layer (20) is deposited. By switching chambers, the liberated species are largely prevented from contributing to particle count at the interface between the conductive layers. Alternatively, the second conductive layer is formed in the same chamber, provided that the liberated species are removed from the chamber prior to deposition of the second conductive layer.
摘要翻译： 用于处理诸如栅叠层的掺杂多晶硅层（14）的导电层的方法在预清洗之后提供脱气步骤以减少颗粒数量和缺陷率。 导电层设置在例如硅晶片的基板（10）上。 在真空下使衬底（10）和导电层经受升高的温度，从而释放某些物质。 然后将其上形成有导电层的衬底从腔室移除，并移动到沉积有第二导电层（20）的第二分离室。 通过切换室，释放的物质被大大地防止在导电层之间的界面处对颗粒计数的贡献。 或者，第二导电层形成在相同的室中，条件是在沉积第二导电层之前将释放的物质从室中除去。
-
6.发明授权Process for forming a semiconductor device and a static-random-access memory cell 失效用于形成半导体器件和静态随机存取存储器单元的工艺
公开(公告)号：US5721167A
公开(公告)日：1998-02-24
申请号：US797142
申请日：1997-02-10
IPC分类号： H01L21/8244
CPC分类号： H01L27/11
摘要： A semiconductor device (10) is formed having an SRAM array with a plurality of SRAM cells. In forming the access and latch transistors, two different gate electrode compositions are used to form the access and latch transistors. More specifically, a dielectric layer (22) is formed between two conductive layers (26 and 28) within the gate electrode (52) for the access transistors while the dielectric layer is not formed between the two conductive layers (26 and 28) for the latch transistors. This structure allows an increase in the beta ratio for the SRAM cell thereby making a more stable SRAM cell without having to use diffused resistors between the access transistors in storage nodes or by having to form a differential thickness between the gate dielectric layers for the latch transistors and the access transistors.
摘要翻译： 形成具有具有多个SRAM单元的SRAM阵列的半导体器件（10）。 在形成访问和锁存晶体管时，使用两种不同的栅电极组合物来形成访问和锁存晶体管。 更具体地，在用于存取晶体管的栅电极（52）内的两个导电层（26和28）之间形成介电层（22），而在两个导电层（26和28）之间不形成介电层，用于 锁存晶体管。 该结构允许增加SRAM单元的β比，从而形成更稳定的SRAM单元，而不必在存储节点中的存取晶体管之间使用扩散电阻，或者必须在用于锁存晶体管的栅介质层之间形成差分厚度 和存取晶体管。
-
公开(公告)号：US09121957B2
公开(公告)日：2015-09-01
申请号：US13123833
申请日：2008-10-14
申请人： Ram C. Naidu , Chitra Subramanian , Sergey B. Simanovsky , Zhengrong Ying , Dong-Yueh Liang , Douglas Q. Abraham
发明人： Ram C. Naidu , Chitra Subramanian , Sergey B. Simanovsky , Zhengrong Ying , Dong-Yueh Liang , Douglas Q. Abraham
IPC分类号： G01V5/00
CPC分类号： G01V5/0041 , G01V5/0016 , G01V5/005
摘要： Radiation flux can be adjusted “on the fly” as an object (204) is being scanned in a security examination apparatus. Adjustments are made to the radiation flux based upon radiation incident on a first radiation detector (226) in an upstream portion (233) of an examination region. The object under examination is thus exposed to different radiation flux in coordination with a downstream motion (235) of the object relative to a second radiation detector (228). The radiation flux is adjusted so that a sufficient number of x-rays (that traverse the object) are incident on the second radiation detector. Images of the object can then be generated based upon data from the second radiation detector, where these images are thus of a desired/higher quality.
摘要翻译： 随着物体（204）在安全检查装置中被扫描，可以“飞行地”调整辐射通量。 基于入射到检查区域的上游部分（233）中的第一辐射检测器（226）上的辐射对辐射通量进行调整。 因此，被检查物体与物体相对于第二辐射检测器（228）的下游运动（235）协调地暴露于不同的辐射通量。 调整辐射通量使得足够数量的X射线（穿过物体）入射到第二辐射探测器上。 然后可以基于来自第二辐射检测器的数据生成对象的图像，其中这些图像因此具有期望/更高质量。
-
公开(公告)号：US09047969B2
公开(公告)日：2015-06-02
申请号：US14452071
申请日：2014-08-05
CPC分类号： G11C11/1675 , G06F11/1048 , G06F11/1076 , G11C11/00 , G11C11/16 , G11C11/1673 , G11C11/1693 , G11C2013/0076 , G11C2029/0411
摘要： A method includes destructively reading bits of a spin torque magnetic random access memory and immediately writing back the original or inverted values. A detection of the majority state of the write back bits and a conditional inversion of write back bits are employed to reduce the number of write back pulses. A subsequent write command received within a specified time or before an original write operation is commenced will cause a portion of the write back pulses or the original write operation pulses to abort. Write pulses during subsequent write operations will follow the conditional inversion determined for the write back bits during destructive read.
摘要翻译： 一种方法包括破坏性地读取自旋扭矩磁随机存取存储器的位并立即写回原始值或反相值。 采用回写位的多数状态的检测和回写位的条件反转来减少回写脉冲的数量。 在指定时间内或在原始写入操作开始之前接收到的后续写入命令将导致回写脉冲的一部分或原始写入操作脉冲中止。 在后续写入操作期间的写入脉冲将遵循在破坏性读取期间为回写位确定的条件反演。
-
公开(公告)号：US08811071B2
公开(公告)日：2014-08-19
申请号：US13362599
申请日：2012-01-31
IPC分类号： G11C11/00
CPC分类号： G11C11/1675 , G06F11/1048 , G06F11/1076 , G11C11/00 , G11C11/16 , G11C11/1673 , G11C11/1693 , G11C2013/0076 , G11C2029/0411
摘要： A method includes destructively reading bits of a spin torque magnetic random access memory and immediately writing back the original or inverted values. A detection of the majority state of the write back bits and a conditional inversion of write back bits are employed to reduce the number of write back pulses. A subsequent write command received within a specified time or before an original write operation is commenced will cause a portion of the write back pulses or the original write operation pulses to abort. Write pulses during subsequent write operations will follow the conditional inversion determined for the write back bits during destructive read.
摘要翻译： 一种方法包括破坏性地读取自旋扭矩磁随机存取存储器的位并立即写回原始值或反相值。 采用回写位的多数状态的检测和回写位的条件反转来减少回写脉冲的数量。 在指定时间内或在原始写入操作开始之前接收到的后续写入命令将导致回写脉冲的一部分或原始写入操作脉冲中止。 在后续写入操作期间的写入脉冲将遵循在破坏性读取期间为回写位确定的条件反演。
-
公开(公告)号：US20120195112A1
公开(公告)日：2012-08-02
申请号：US13362599
申请日：2012-01-31
IPC分类号： G11C11/16
CPC分类号： G11C11/1675 , G06F11/1048 , G06F11/1076 , G11C11/00 , G11C11/16 , G11C11/1673 , G11C11/1693 , G11C2013/0076 , G11C2029/0411
摘要： A method includes destructively reading bits of a spin torque magnetic random access memory and immediately writing back the original or inverted values. A detection of the majority state of the write back bits and a conditional inversion of write back bits are employed to reduce the number of write back pulses. A subsequent write command received within a specified time or before an original write operation is commenced will cause a portion of the write back pulses or the original write operation pulses to abort. Write pulses during subsequent write operations will follow the conditional inversion determined for the write back bits during destructive read.
摘要翻译： 一种方法包括破坏性地读取自旋扭矩磁随机存取存储器的位并立即写回原始值或反相值。 采用回写位的多数状态的检测和回写位的条件反转来减少回写脉冲的数量。 在指定时间内或在原始写入操作开始之前接收到的后续写入命令将导致回写脉冲的一部分或原始写入操作脉冲中止。 在后续写入操作期间的写入脉冲将遵循在破坏性读取期间为回写位确定的条件反演。
-
-
-
-
-
-
-
-
-
搜索结果
18 条记录 (耗时 0.017 秒)
