公开(公告)号：US20120252174A1

公开(公告)日：2012-10-04

申请号：US13434923

申请日：2012-03-30

申请人： Didier Dutartre ,  Nicolas Loubet ,  Yves Campidelli ,  Denis Pellissier-Tanon

发明人： Didier Dutartre ,  Nicolas Loubet ,  Yves Campidelli ,  Denis Pellissier-Tanon

IPC分类号： H01L21/336 ,  H01L21/20

CPC分类号： H01L21/02532 ,  H01L21/02381 ,  H01L21/0262 ,  H01L21/02636 ,  H01L29/66628 ,  H01L29/78 ,  H01L29/7848

摘要： A layer of a semiconductor material is epitaxially grown on a single-crystal semiconductor structure and on a polycrystalline semiconductor structure. The epitaxial layer is then etched in order to preserve a non-zero thickness of said material on the single-crystal structure and a zero thickness on the polycrystalline structure. The process of growth and etch is repeated, with the same material or with a different material in each repetition, until a stack of epitaxial layers on said single-crystal structure has reached a desired thickness. The single crystal structure is preferably a source/drain region of a transistor, and the polycrystalline structure is preferably a gate of that transistor.

摘要翻译： 在单晶半导体结构和多晶半导体结构上外延生长半导体材料层。 然后蚀刻外延层，以便在单晶结构上保留所述材料的非零厚度，并在多晶结构上保持零厚度。 在每个重复中，使用相同的材​​料或不同的材料重复生长和蚀刻的过程，直到所述单晶结构上的一叠外延层已经达到期望的厚度。 单晶结构优选为晶体管的源/漏区，多晶结构优选为该晶体管的栅极。