公开(公告)号：US20120295814A1

公开(公告)日：2012-11-22

申请号：US13520665

申请日：2011-01-07

申请人： Daniel Cramer ,  Brian Liu ,  Dennis O'Rourke

发明人： Daniel Cramer ,  Brian Liu ,  Dennis O'Rourke

IPC分类号： G01N33/574 ,  G01N33/577 ,  C40B30/04

CPC分类号： C07K16/3092 ,  G01N33/57449 ,  G01N2800/50 ,  G01N2800/54

摘要： The invention is directed to assays of CA-125 immune complexes that can be used diagnostically. It also includes glass or plastic plates or slides on which the monoclonal antibodies against CA-125 have been immobilized and kits containing these plates or slides.

摘要翻译： 本发明涉及可以在诊断上使用的CA-125免疫复合物的测定。 它还包括玻璃或塑料板或载玻片，抗CA-125的单克隆抗体已经固定在其上，并含有这些板或载玻片的试剂盒。

公开(公告)号：US3955210A

公开(公告)日：1976-05-04

申请号：US537511

申请日：1974-12-30

申请人： Harsaran Singh Bhatia ,  Gerald Dennis O'Rourke ,  Siegfried K. Wiedmann

发明人： Harsaran Singh Bhatia ,  Gerald Dennis O'Rourke ,  Siegfried K. Wiedmann

IPC分类号： H01L27/08 ,  H01L27/092 ,  H01L29/06 ,  H01L29/78 ,  H01L27/02

CPC分类号： H01L27/0921 ,  H01L29/0638

摘要： A complementary field effect transistor structure which eliminates the problems caused by parasitic currents between devices. The currents are contained within parasitic bipolar devices formed between the various regions of the FETs. A portion of the collector current of the parasitic bipolar devices is drained away so that the loop gain is less than one. This is achieved by placing guard regions of conductivity type which are the same as the channel type of the transistors adjacent said regions. The guard region is preferably in the form of a continuous ring around its associated FET.

摘要翻译： 互补的场效应晶体管结构，消除了由器件之间的寄生电流引起的问题。 电流包含在形成在FET的各个区域之间的寄生双极器件内。 寄生双极器件的集电极电流的一部分被排出，使得环路增益小于1。 这是通过放置与所述区域相邻的晶体管的通道类型相同的导电类型的保护区域来实现的。 保护区域优选为围绕其相关联的FET的连续环形式。