公开(公告)号：US20090139657A1

公开(公告)日：2009-06-04

申请号：US12207815

申请日：2008-09-10

申请人： CHANGHUN LEE ,  Brad Eaton ,  Diana X. Ma

发明人： CHANGHUN LEE ,  Brad Eaton ,  Diana X. Ma

IPC分类号： H01L21/306

CPC分类号： H01L21/67207 ,  H01J37/32357 ,  H01J37/32449 ,  H01J37/32935 ,  H01J37/32972 ,  H01L21/67069 ,  H01L21/67276

摘要： A semiconductor processing system includes a factory interface. A central transfer chamber is coupled to the factory interface. A first number of etch chambers are coupled to the central transfer chamber. The first number of etch chambers are configured to etch a substrate at about a first processing time. A second number of post-etch treatment chambers are coupled to the central transfer chamber. The second number of post-etch treatment chambers are configured to process the substrate at about a second processing time, wherein a ratio of the first number to the second number is substantially proportional to a ratio of the first processing time to the second processing time.

摘要翻译： 半导体处理系统包括工厂接口。 中央传送室连接到工厂接口。 第一数量的蚀刻室耦合到中心传送室。 第一数量的蚀刻室配置成在大约第一处理时间刻蚀衬底。 第二数量的蚀刻后处理室联接到中央传送室。 第二数量的蚀刻后处理室被配置为在大约第二处理时间处理衬底，其中第一数量与第二数量的比率基本上与第一处理时间与第二处理时间的比率成比例。

公开(公告)号：US5540824A

公开(公告)日：1996-07-30

申请号：US277531

申请日：1994-07-18

申请人： Gerald Z. Yin ,  Hiroji Hanawa ,  Diana X. Ma ,  Donald Olgado

发明人： Gerald Z. Yin ,  Hiroji Hanawa ,  Diana X. Ma ,  Donald Olgado

IPC分类号： H05H1/46 ,  C23F4/00 ,  H01J37/32 ,  H01L21/203 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  C23F1/00 ,  C23C14/34 ,  C23C16/00

CPC分类号： H01J37/32458 ,  H01J37/321

摘要： Capacitive coupling and RF power dissipation is advantageously reduced in the present invention by employing an RF coil having plural coil sections, each coil section connected across an RF source, commonly tapped ones of the coil sections being wound in opposite directions. Capacitive coupling and RF power dissipation is further reduced by employing a top lid having an outer insulating annulus and an inner conducting disk portion, the conducting disk portion being displaced or spaced apart from the coil by the width of the annulus. This displacement significantly reduces the RF power dissipation or coupling from the top winding of the coil to the lid. Furthermore, the plural coil sections or mirror coil configuration reduces sputtering of insulative material induced by capacitive RF coupling.

摘要翻译： 通过采用具有多个线圈部分的RF线圈，每个线圈部分连接在RF源上，通常在线圈部分中的一些线圈部分沿相反的方向缠绕，从而有利地减少了电容耦合和RF功率消耗。 通过采用具有外绝缘环和内导电盘部分的顶盖进一步减小电容耦合和RF功率耗散，导电盘部分与线圈移位或间隔开环形宽度。 这种位移显着降低了RF功率消耗或从线圈的顶部绕组到盖子的耦合。 此外，多个线圈部分或镜面线圈构造减少了由电容RF耦合引起的绝缘材料的溅射。

公开(公告)号：US5753044A

公开(公告)日：1998-05-19

申请号：US389889

申请日：1995-02-15

申请人： Hiroji Hanawa ,  Gerald Zheyao Yin ,  Diana X. Ma ,  Phil M. Salzman ,  Peter Loewenhardt ,  Allen Zhao

发明人： Hiroji Hanawa ,  Gerald Zheyao Yin ,  Diana X. Ma ,  Phil M. Salzman ,  Peter Loewenhardt ,  Allen Zhao

IPC分类号： H05H1/46 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  C23C16/00

CPC分类号： H01J37/321

摘要： An inductively coupled RF plasma reactor for processing semiconductor wafer includes a reactor chamber having a side wall and a ceiling, a wafer pedestal for supporting the wafer in the chamber, an RF power source, apparatus for introducing a processing gas into the reactor chamber, and a coil inductor adjacent the reactor chamber connected to the RF power source, the coil inductor including (a) a side section facing a portion of the side wall and including a bottom winding and a top winding, the top winding being at a height corresponding at least approximately to a top height of the ceiling, and (b) a top section extending radially inwardly from the top winding of the side section so as to overlie at least a substantial portion of the ceiling.

摘要翻译： 用于处理半导体晶片的感应耦合RF等离子体反应器包括具有侧壁和天花板的反应室，用于将晶片支撑在室中的晶片基座，RF电源，将处理气体引入反应室的装置，以及 与所述反应室相邻的线圈电感器，所述线圈电感器连接到所述RF电源，所述线圈电感器包括（a）面向所述侧壁的一部分并包括底部绕组和顶部绕组的侧面部分，所述顶部绕组的高度对应于 至少大约到顶部的顶部高度，以及（b）从侧部的顶部绕组径向向内延伸的顶部部分，以便至少覆盖天花板的大部分。