System and method of water purification and hydrogen peroxide generation by plasma

    公开(公告)号:US11535532B1

    公开(公告)日:2022-12-27

    申请号:US16932018

    申请日:2020-07-17

    Inventor: Dmitry Medvedev

    Abstract: A system for generation of radicals in a liquid (e.g., OH and derivatively H2O2 in water) by a plasma reactor, including a first electrode having a rod shape or a tubular shape; a dielectric tubular housing coaxial with the first electrode and enclosing the first electrode, and having a gap to the first electrode of 0.3-30 mm; a second electrode on an outside of the dielectric tubular housing and coaxial with first electrode with a gap 0.3-30 mm; a high voltage power supply providing voltage oscillations or pulses of 0.5-30 kV and a frequency 1-50 kHz between the first and second electrodes; and a pump or a Venturi injector on an output of the plasma reactor and a chock valve on an input of reactor for generating a low water pressure in the gap between first and second electrodes so as to generate boiling in the gap.

    Grid-based resist simulation
    5.
    发明授权
    Grid-based resist simulation 有权
    基于网格的抗蚀剂模拟

    公开(公告)号:US07378202B2

    公开(公告)日:2008-05-27

    申请号:US11606769

    申请日:2006-11-29

    CPC classification number: G03F7/705 G03F1/36 G03F1/68

    Abstract: A grid-based resist simulator predicts how a wafer coated with one or more resist layers will develop when exposed with a mask pattern. Image intensity values are calculated at a grid of points on the wafer, and the image intensity points are analyzed with a resist simulator that produces a resist surface function. A threshold contour of the resist surface function defines how the mask pattern will print on a wafer.

    Abstract translation: 基于栅格的抗蚀剂模拟器预测当用掩模图案曝光时,涂覆有一个或多个抗蚀剂层的晶片将如何发展。 在晶片上的点的网格上计算图像强度值,并且用产生抗蚀剂表面功能的抗蚀剂模拟器分析图像强度点。 抗蚀剂表面功能的阈值轮廓定义掩模图案将如何在晶片上印刷。

    Grid-based resist simulation
    6.
    发明申请
    Grid-based resist simulation 有权
    基于网格的抗蚀剂模拟

    公开(公告)号:US20070196747A1

    公开(公告)日:2007-08-23

    申请号:US11606769

    申请日:2006-11-29

    CPC classification number: G03F7/705 G03F1/36 G03F1/68

    Abstract: A grid-based resist simulator predicts how a wafer coated with one or more resist layers will develop when exposed with a mask pattern. Image intensity values are calculated at a grid of points on the wafer, and the image intensity points are analyzed with a resist simulator that produces a resist surface function. A threshold contour of the resist surface function defines how the mask pattern will print on a wafer.

    Abstract translation: 基于栅格的抗蚀剂模拟器预测当用掩模图案曝光时,涂覆有一个或多个抗蚀剂层的晶片将如何发展。 在晶片上的点的网格上计算图像强度值,并且用产生抗蚀剂表面功能的抗蚀剂模拟器分析图像强度点。 抗蚀剂表面功能的阈值轮廓定义掩模图案将如何在晶片上印刷。

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