摘要:
Methods of measuring a mean-to-target (MTT) based on pattern area measurements are provided including providing a design pattern. A plurality of design pattern measurements are measured for calculating an area of the design pattern based on a shape of the design pattern. A series of calculation measurements are calculated by continuously substituting a same variation into the design pattern measurements, and calculating a series of calculation areas corresponding respectively to the calculation measurements to generate a database including the calculation measurements and the calculation areas. An actual pattern is formed using the design pattern and an area of the actual pattern is measured. A calculation area corresponding to the area of the actual pattern is selected from the database and calculation measurements corresponding to the calculation area are selected. A difference between the design pattern measurements and the calculation measurements is calculated and the difference is set as an MTT. Related methods of correcting a photomask are also provided herein.
摘要:
Liquid crystal displays and fabrication methods thereof are provided. The liquid crystal display includes first substrate and second substrate facing the first substrate, and liquid crystal layer interposed therebetween. The first substrate includes a peripheral part spacer of which a surface includes a transparent conductive material, the peripheral part spacer being connected to a common voltage connector of the second substrate. A common voltage is applied to the first substrate through the common voltage connector and the peripheral part spacer. The peripheral part spacer is formed in the same process step with a display part spacer. To provide the peripheral part spacer with conductivity, the surface of the peripheral part spacer is covered with a transparent conductive material in the same process step in which the common electrode is formed on the first substrate. Accordingly, the peripheral part spacer configured to apply a common voltage to a common electrode can be formed without additional processing.
摘要:
A method of repairing a thin film transistor array panel is provided. The thin film transistor array panel includes a gate line, a data line intersecting the gate line, a thin film transistor connected to the gate line and the data line and having a drain electrode, a pixel electrode including at least one first subpixel electrode connected to the drain electrode of the thin film transistor and a second subpixel electrode capacitively coupled to the at least one first subpixel electrode. The repairing method according to an embodiment of the present invention includes: disconnecting at least one of the second subpixel electrode and the at least one first subpixel electrode from the thin film transistor.
摘要:
The invention provides a LCD including an insulating substrate; a plurality of first signal lines formed on the insulating substrate; a plurality of second signal lines crossing and insulated from the first signal lines; a plurality of thin film transistors (TFT) coupled with the first and second signal lines; and a plurality of pixels including a plurality of first sub-pixel electrodes coupled with the TFTs and a plurality of second sub-pixel electrodes capacitively coupled with the first sub-pixel electrodes, wherein the pixels include a red (R) pixel, a green (G) pixel, and a blue (B) pixel and a voltage ratio or an area ratio of the second sub-pixel electrode with respect to the first sub-pixel electrode is different among the R, G, and B pixels to improve a brightness ratio of R, G, and B components at a lateral position.
摘要:
A method for forming alignment keys on the scribe line areas of a semiconductor wafer. An etch blocking layer is used to reduce the depth of the channels forming the alignment key. One of the layers of material deposited on the semiconductor wafer to form integrated circuit devices on the wafer may be used as the etch blocking layer. A portion of this layer of material may be left intact on the scribe line areas during the manufacturing process. The subsequently deposited layers have an etch selectivity with respect to the etch blocking layer and the subsequently deposited layers are etched down to the etch blocking layer to form the alignment keys.
摘要:
The present invention relates to a novel genipin derivative represented by formula (I), which has anti hepatitis B virus (HBV) activity, in which R.sub.1 represents lower alkyl, benzyl, etc., R.sub.2 represents hydroxymethyl, formyl, acetyl, etc., R.sub.3 represents methoxycarbonyl, formyl, etc., its pharmaceutically acceptable salt, and stereoisomer. ##STR1##
摘要:
Liquid crystal displays and fabrication methods thereof are provided. The liquid crystal display includes first substrate and second substrate facing the first substrate, and liquid crystal layer interposed therebetween. The first substrate includes a peripheral part spacer of which a surface includes a transparent conductive material, the peripheral part spacer being connected to a common voltage connector of the second substrate. A common voltage is applied to the first substrate through the common voltage connector and the peripheral part spacer. The peripheral part spacer is formed in the same process step with a display part spacer. To provide the peripheral part spacer with conductivity, the surface of the peripheral part spacer is covered with a transparent conductive material in the same process step in which the common electrode is formed on the first substrate. Accordingly, the peripheral part spacer configured to apply a common voltage to a common electrode can be formed without additional processing.
摘要:
A photo mask which enhances contrast and a method of fabricating the same are provided. The photo mask includes a transparent substrate and a light shielding layer pattern formed on the transparent substrate. The light shielding layer pattern includes apertures through which the transparent substrate is exposed. Depressions aligned with these apertures extend into the transparent substrate. Light exposed at an angle through the transparent layer would then pass into the depressions and reflect or diffuse from the sidewalls of the depressions and out through the apertures. The etching depth of the depressions is preferably equal to or less than a depth at which threshold intensity of the exposure light is saturated as the etching depth is increased. In another embodiment, the etching depth of the depressions is less than the wavelength of the exposure light.
摘要:
A mask and a method of forming the mask obviate optical proximity effects. The mask includes a light-shielding layer on a transparent substrate. The light-shielding layer is patterned to form a main pattern and a phantom pattern. The main and phantom patterns each have a light shielding portion and a light-transmitting portion. The pitch of the features constituting the phantom pattern is identical to the pitch of the features constituting the main pattern. The shape of the light-transmitting features of the phantom pattern region is identical to the shape of the light-transmitting features of the main pattern region.
摘要:
In an embodiment, a mask inspection apparatus for detecting defects in a semiconductor pattern on a mask includes optics for combining light transmitted through or reflected from the mask with a reference beam. The two light beams are transmitted through a second-order non-linear optical system. Mask defects affect the transmitted/reflected light and may be detected by analyzing the transmitted light intensity. The second-order non-linear optical system amplifies selected elements of the combined beam, thus improving detection.