公开(公告)号：US20130082361A1

公开(公告)日：2013-04-04

申请号：US13396302

申请日：2012-02-14

申请人： Keon Jae LEE ,  Kwyro Lee ,  Geon Tae Hwang ,  Donggu Im

发明人： Keon Jae LEE ,  Kwyro Lee ,  Geon Tae Hwang ,  Donggu Im

IPC分类号： H01L29/02 ,  H01L21/762

CPC分类号： A61N1/375 ,  H01L21/76256 ,  H01L23/3107 ,  H01L23/3171 ,  H01L27/1266 ,  H01L29/7842 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided are a method of manufacturing a flexible device and a flexible device manufactured thereby.The method of manufacturing a flexible device according to the present disclosure includes: fabricating a device on an upper silicon layer of a silicon-on-insulator (SOI) substrate comprising a lower silicon layer, an insulation layer and the upper silicon layer stacked sequentially; adhering a second silicon substrate to the upper silicon layer; removing the lower silicon layer; transferring the upper silicon layer with the device fabricated to a flexible substrate using the second silicon substrate; and stacking a passivation layer on the flexible substrate, wherein the device is located at a position of a neutral mechanical plane of the entire device as the passivation layer is stacked.

摘要翻译： 提供一种制造柔性装置的方法和由此制造的柔性装置。 根据本公开的制造柔性器件的方法包括：在绝缘体上硅（SOI）衬底的上硅层上制造器件，其包括依次堆叠的下硅层，绝缘层和上硅层; 将第二硅衬底粘附到所述上硅层; 去除下硅层; 使用所述第二硅衬底将所述上硅层与所制造的器件转移到柔性衬底; 以及在所述柔性基板上堆叠钝化层，其中当所述钝化层被堆叠时，所述器件位于整个器件的中性机械平面的位置。