公开(公告)号：US20070126022A1

公开(公告)日：2007-06-07

申请号：US11634112

申请日：2006-12-06

申请人： Doo Baik ,  Bang Oh ,  Seok Choi ,  Su Lee

发明人： Doo Baik ,  Bang Oh ,  Seok Choi ,  Su Lee

IPC分类号： H01L33/00

CPC分类号： H01L33/14 ,  H01L33/02 ,  H01L33/32

摘要： A vertical GaN-based LED and a method of manufacturing the same are provided. The vertical GaN-based LED can prevent the damage of an n-type GaN layer contacting an n-type electrode, thereby stably securing the contact resistance of the n-electrode. The vertical GaN-based LED includes: a support layer; a p-electrode formed on the support layer; a p-type GaN layer formed on the p-electrode; an active layer formed on the p-type GaN layer; an n-type GaN layer for an n-type electrode contact, formed on the active layer; an etch stop layer formed on the n-type GaN layer to expose a portion of the n-type GaN layer; and an n-electrode formed on the n-type GaN layer exposed by the etch stop layer.

摘要翻译： 提供了一种垂直GaN基LED及其制造方法。 垂直GaN基LED可以防止与n型电极接触的n型GaN层的损坏，从而稳定地确保n电极的接触电阻。 垂直GaN基LED包括：支撑层; 形成在支撑层上的p电极; 形成在p电极上的p型GaN层; 形成在p型GaN层上的有源层; 在有源层上形成用于n型电极接触的n型GaN层; 形成在所述n型GaN层上以暴露所述n型GaN层的一部分的蚀刻停止层; 以及形成在由蚀刻停止层露出的n型GaN层上的n电极。

公开(公告)号：US20050093011A1

公开(公告)日：2005-05-05

申请号：US11012331

申请日：2004-12-16

申请人： Doo Baik ,  Bang Oh ,  Hak Kim

发明人： Doo Baik ,  Bang Oh ,  Hak Kim

IPC分类号： H01L33/00 ,  H01L33/10 ,  H01L33/32 ,  H01L33/46

CPC分类号： H01L33/46 ,  H01L33/0079

摘要： Disclosed are a light emitting diode (LED) with high luminance and a method for manufacturing the same. The LED comprises a substrate, a first conductive clad layer formed on the substrate, an active layer formed on the first conductive clad layer, a second conductive clad layer formed on the active layer, an alumina (Al2O3) layer formed on the lower surface of the substrate, and an aluminum layer formed on the lower surface of the alumina (Al2O3) layer. Otherwise, the substrate is removed, the aluminum layer and the alumina layer are formed directly on the lower surface of the first conductive clad layer. Compared to a single reflective layer made of a metal, a reflective layer including the aluminum layer and the alumina layer improves reflective characteristics of the LED.

摘要翻译： 公开了一种具有高亮度的发光二极管（LED）及其制造方法。 LED包括基板，形成在基板上的第一导电覆盖层，形成在第一导电覆层上的有源层，形成在有源层上的第二导电覆盖层，氧化铝（Al 2 O 3） O 3层）和形成在氧化铝的下表面上的铝层（Al 2 O 3 3 O 3） >）层。 否则，去除衬底，铝层和氧化铝层直接形成在第一导电覆层的下表面上。 与由金属制成的单个反射层相比，包括铝层和氧化铝层的反射层提高了LED的反射特性。

公开(公告)号：US20070134826A1

公开(公告)日：2007-06-14

申请号：US11584591

申请日：2006-10-23

申请人： Doo Baik ,  Bang Oh ,  Nam Kim

发明人： Doo Baik ,  Bang Oh ,  Nam Kim

IPC分类号： H01L21/00

CPC分类号： H01L33/0079

摘要： According to a method of manufacturing a vertical nitride light emitting device, a first conductivity type nitride layer, an active layer and a second conductivity type nitride layer are sequentially grown on a preliminary growth substrate to form a light emission structure. The light emission structure is cut according to a final size of light emitting devices, leaving a predetermined thickness of the first conductivity type nitride layer intact. A permanent conductive substrate is provided on the light emission structure and the preliminary substrate is diced into a plurality of units. Laser beam is irradiated to detach the preliminary substrate, thereby separating the light emission structure according to the size of the light emitting devices. First and second contacts are formed on the first conductivity type nitride layer and the permanent conductive substrate, respectively. The permanent conductive substrate is diced to complete individual light emitting devices.

摘要翻译： 根据制造垂直氮化物发光器件的方法，在预备生长衬底上依次生长第一导电型氮化物层，有源层和第二导电型氮化物层，以形成发光结构。 根据发光器件的最终尺寸切割发光结构，留下第一导电型氮化物层的预定厚度。 在发光结构上设置永久导电基板，将预备基板切割成多个单元。 照射激光束以分离初始衬底，从而根据发光器件的尺寸分离发光结构。 第一和第二触点分别形成在第一导电型氮化物层和永久导电基板上。 切割永久导电基板以完成各个发光器件。