公开(公告)号：US06831329B2

公开(公告)日：2004-12-14

申请号：US10278224

申请日：2002-10-22

申请人： Joseph A. Yedinak ,  Jon Gladish ,  Sampat Shekhawat ,  Gary M. Dolny ,  Praveen Muraleedharan Shenoy ,  Douglas Joseph Lange ,  Mark L. Rinehimer

发明人： Joseph A. Yedinak ,  Jon Gladish ,  Sampat Shekhawat ,  Gary M. Dolny ,  Praveen Muraleedharan Shenoy ,  Douglas Joseph Lange ,  Mark L. Rinehimer

IPC分类号： H01L21336

CPC分类号： H01L29/4232 ,  H01L29/1095 ,  H01L29/66333 ,  H01L29/7395

摘要： A quick punch-through integrated gate bipolar transistor (IGBT) includes a drift region and a gate. The drift region has a drift region dopant concentration and a drift region thickness. The gate has a gate capacitance. The drift region dopant concentration, drift region thickness and gate capacitance are adjusted dependent at least in part upon the PNP gain of the IGBT to maintain the potential difference between the gate and emitter at a level greater than the IGBT threshold voltage when the collector voltage reaches the bus voltage. This insures that the hole carrier concentration remains approximately equal to or greater than the drift region dopant concentration when the depletion layer punches through to the buffer region during the turn-off delay. Thus, the collector voltage overshoot and the rate of change of voltage and current are controlled, and electromagnetic interference is reduced, during turn off.

摘要翻译： 快速穿透式集成栅双极晶体管（IGBT）包括漂移区和栅极。 漂移区具有漂移区掺杂浓度和漂移区厚度。 栅极具有栅极电容。 调整漂移区掺杂浓度，漂移区厚度和栅极电容至少部分依赖于IGBT的PNP增益，以在集电极电压达到时将栅极和发射极之间的电位差维持在大于IGBT阈值电压的电平 总线电压。 这确保当在关断延迟期间耗尽层冲击到缓冲区域时，空穴载流子浓度保持近似等于或大于漂移区掺杂剂浓度。 因此，控制集电极电压过冲和电压和电流的变化率，并且在关断期间电磁干扰降低。