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    Novel Alkali Metal and Alkali Earth Metal Gadolinium Halide Scintillators
    6.
    发明申请
    Novel Alkali Metal and Alkali Earth Metal Gadolinium Halide Scintillators 有权
    新型碱金属和碱土金属钆卤化物闪烁体

    公开(公告)号：US20090166585A1

    公开(公告)日：2009-07-02

    申请号：US12262132

    申请日：2008-10-30

    申请人： Edith Bourret-Courchesne ,  Stephen E. Derenzo ,  Shameka Parms ,  Yetta D. Porter-Chapman ,  Latoria K. Wiggins

    发明人： Edith Bourret-Courchesne ,  Stephen E. Derenzo ,  Shameka Parms ,  Yetta D. Porter-Chapman ,  Latoria K. Wiggins

    IPC分类号： C09K11/61

    CPC分类号： C09K11/7773

    摘要： The present invention provides for a composition comprising an inorganic scintillator comprising a gadolinium halide, optionally cerium-doped, having the formula AnGdXm:Ce; wherein A is nothing, an alkali metal, such as Li or Na, or an alkali earth metal, such as Ba; X is F, Br, Cl, or I; n is an integer from 1 to 2; m is an integer from 4 to 7; and the molar percent of cerium is 0% to 100%. The gadolinium halides or alkali earth metal gadolinium halides are scintillators and produce a bright luminescence upon irradiation by a suitable radiation.

    摘要翻译： 本发明提供包含无机闪烁体的组合物，其包含具有式AnGdXm：Ce的卤化钆，任选是铈掺杂的; 其中A不含，碱金属如Li或Na，或碱土金属如Ba; X是F，Br，Cl或I; n是1至2的整数; m为4〜7的整数; 铈的摩尔百分数为0〜100％。 卤化钆或碱土金属钆卤化物是闪烁体，并且在通过合适的辐射照射时产生明亮的发光。

    Identifying new semiconductor detector materials by D.C. ionization conductivity
    9.
    发明授权
    Identifying new semiconductor detector materials by D.C. ionization conductivity 有权
    通过直流电导率确定新的半导体探测器材料

    公开(公告)号：US08304748B2

    公开(公告)日：2012-11-06

    申请号：US12091045

    申请日：2006-10-19

    申请人： Stephen E. Derenzo ,  Edith Bourret-Courchesne ,  Yetta D. Porter-Chapman ,  Floyd J. James ,  Mattias K. Klintenberg ,  Jie Wang ,  Jia-Qing Wang, legal representative

    发明人： Stephen E. Derenzo ,  Edith Bourret-Courchesne ,  Yetta D. Porter-Chapman ,  Floyd J. James ,  Mattias K. Klintenberg ,  Jie Wang

    IPC分类号： A61N5/00 ,  G21G5/00

    CPC分类号： G01N27/043 ,  H01L31/032

    摘要： Herein is described a method for identifying semiconductor radiation detector materials based on the mobility of internally generated electrons and holes. It was designed for the early stages of exploration, when samples are not available as single crystals, but as crystalline powders. Samples are confined under pressure in an electric field and the increase in current resulting from exposure to a high-intensity source of ionization current (e.g., 60Co gamma rays) is measured. A pressure cell device is described herein to carry out the method. For known semiconductors, the d.c. ionization current depends on voltage according to the Hecht equation, and for known insulators the d.c. ionization current is below detection limits. This shows that the method can identify semiconductors in spite of significant carrier trapping. Using this method and pressure cell, it was determined that new materials BiOI, PbIF, BiPbO2Cl, BiPbO2Br, BiPbO2I, Bi2GdO4Cl, Pb3O2I2, and Pb5O4I2 are semiconductors.

    摘要翻译： 这里描述了一种基于内部产生的电子和空穴的迁移率来识别半导体辐射探测器材料的方法。 它被设计用于探测的早期阶段，当样品不能作为单晶，而是作为结晶粉末。 样品被限制在电场的压力下，并且测量由暴露于高强度电离电流源（例如，60Coγ射线）而产生的电流的增加。 这里描述了压力传感器装置来执行该方法。 对于已知的半导体， 电离电流取决于Hecht方程的电压，而对于已知的绝缘子，直流电流。 电离电流低于检测限。 这表明该方法可以识别半导体，尽管有明显的载流子捕获。 使用这种方法和压力池，确定新材料BiOI，PbIF，BiPbO2Cl，BiPbO2Br，BiPbO2I，Bi2GdO4Cl，Pb3O2I2和Pb5O4I2是半导体。

    Codoped direct-gap semiconductor scintillators
    10.
    发明授权
    Codoped direct-gap semiconductor scintillators 失效
    编码直接间隙半导体闪烁体

    公开(公告)号：US07404913B2

    公开(公告)日：2008-07-29

    申请号：US11382883

    申请日：2006-05-11

    申请人： Stephen Edward Derenzo ,  Edith Bourret-Courchesne ,  Marvin J. Weber ,  Mattias K. Klintenberg

    发明人： Stephen Edward Derenzo ,  Edith Bourret-Courchesne ,  Marvin J. Weber ,  Mattias K. Klintenberg

    IPC分类号： C09K11/56 ,  C09K11/54

    CPC分类号： C09K11/565

    摘要： Fast, bright inorganic scintillators at room temperature are based on radiative electron-hole recombination in direct-gap semiconductors, e.g. CdS and ZnO. The direct-gap semiconductor is codoped with two different impurity atoms to convert the semiconductor to a fast, high luminosity scintillator. The codopant scheme is based on dopant band to dopant trap recombination. One dopant provides a significant concentration of carriers of one type (electrons or holes) and the other dopant traps carriers of the other type. Examples include CdS:In,Te; CdS:In,Ag; CdS:In,Na; ZnO:Ga,P; ZnO:Ga,N; ZnO:Ga,S; and GaN:Ge,Mg.

    摘要翻译： 在室温下快速，明亮的无机闪烁体基于直接间隙半导体中的辐射电子 - 空穴复合，例如。 CdS和ZnO。 直接间隙半导体与两个不同的杂质原子共同掺杂，将半导体转换成快速，高亮度的闪烁体。 共掺杂方案基于掺杂剂掺杂剂掺杂剂阱掺杂剂复合。 一种掺杂剂提供了一种类型（电子或空穴）和另一种类型的其它掺杂剂陷阱载体的载流子的显着浓度。 实例包括CdS：In，Te; CdS：In，Ag; CdS：In，Na; ZnO：Ga，P; ZnO：Ga，N; ZnO：Ga，S; 和GaN：Ge，Mg。