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公开(公告)号：US06914831B2
公开(公告)日：2005-07-05
申请号：US10822771
申请日：2004-04-13
申请人： Ercole Di Iorio
发明人： Ercole Di Iorio
CPC分类号： G11C5/147
摘要： A current reference for providing a stable current output across a range of temperatures and input power supply voltages by summing signals from a first and second current generation subcircuits which generate temperature dependent signals having in inverse relationship. The first current generation subcircuit includes two NMOS transistors and a resistor and has a negative thermal coefficient. The second current generation subcircuit includes two bipolar transistors and a resistor and has a positive thermal coefficient.
摘要翻译： 用于通过对产生具有相反关系的与温度相关的信号的第一和第二电流产生子电路求和的信号来提供跨越温度范围和输入电源电压的稳定电流输出的电流参考。 第一代电路包括两个NMOS晶体管和一个电阻，并具有负热系数。 第二代电路包括两个双极晶体管和一个电阻，并具有正的热系数。
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公开(公告)号：US06838864B2
公开(公告)日：2005-01-04
申请号：US10772834
申请日：2004-02-05
申请人： Ercole Di Iorio
发明人： Ercole Di Iorio
摘要： A reference voltage source for an integrated circuit includes a first voltage reference that is adjustable, a second voltage reference, a differential sensing device to compare a voltage provided by the first voltage reference to a voltage provided by the second voltage reference, a controller to provide a trim control signal to the first voltage reference in response to an output of the differential sensing device for adjusting the first voltage reference and to provide a signal to power down the second voltage reference after the first voltage reference has been adjusted.
摘要翻译： 用于集成电路的参考电压源包括可调节的第一电压基准，第二参考电压，差分感测装置，用于将由第一参考电压提供的电压与由第二参考电压提供的电压进行比较，控制器提供 响应于用于调整第一参考电压的差分感测装置的输出，提供到第一参考电压的调整控制信号，并且在调整了第一参考电压之后提供一个信号以使第二参考电压下降。
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公开(公告)号：US06738297B2
公开(公告)日：2004-05-18
申请号：US10146112
申请日：2002-05-16
申请人： Ercole Di Iorio
发明人： Ercole Di Iorio
IPC分类号： G11C700
CPC分类号： G11C5/147
摘要： A current reference for providing a stable current output across a range of temperatures and input power supply voltages by summing signals from a first and second current generation subcircuits which generate temperature dependent signals having in inverse relationship. The first current generation subcircuit includes two NMOS transistors and a resistor and has a negative thermal coefficient. The second current generation subcircuit includes two bipolar transistors and a resistor and has a positive thermal coefficient.
摘要翻译： 用于通过对产生具有相反关系的与温度相关的信号的第一和第二电流产生子电路求和的信号来提供跨越温度范围和输入电源电压的稳定电流输出的电流参考。 第一代电路包括两个NMOS晶体管和一个电阻，并具有负热系数。 第二代电路包括两个双极晶体管和一个电阻，并具有正的热系数。
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公开(公告)号：US06713996B2
公开(公告)日：2004-03-30
申请号：US10230355
申请日：2002-08-28
申请人： Ercole Di Iorio
发明人： Ercole Di Iorio
IPC分类号： G05F316
摘要： A reference voltage source for an integrated circuit includes a first voltage reference that is adjustable, a second voltage reference, a differential sensing device to compare a voltage provided by the first voltage reference to a voltage provided by the second voltage reference, a controller to provide a trim control signal to the first voltage reference in response to an output of the differential sensing device for adjusting the first voltage reference and to provide a signal to power down the second voltage reference after the first voltage reference has been adjusted.
摘要翻译： 用于集成电路的参考电压源包括可调节的第一电压基准，第二参考电压，差分感测装置，用于将由第一参考电压提供的电压与由第二参考电压提供的电压进行比较，控制器提供 响应于用于调整第一参考电压的差分感测装置的输出，提供到第一参考电压的调整控制信号，并且在调整了第一参考电压之后提供一个信号以使第二参考电压下降。
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5.发明授权Word line voltage boost system and method for non-volatile memory devices and memory devices and processor-based system using same 有权用于非易失性存储器件和存储器件的字线升压系统和方法以及使用它的基于处理器的系统公开(公告)号：US08681559B2
公开(公告)日：2014-03-25
申请号：US13070121
申请日：2011-03-23
IPC分类号： G11C16/04
摘要： The voltage of a selected word line is increased beyond the voltage to which a respective string driver transistor is capable of driving the word line by capacitively coupling a voltage to the selected word line from adjacent word lines. The voltage is capacitively coupled to the selected word line by increasing the voltages of the adjacent word lines after a programming voltage has been applied to a string driver transistor for the selected word line and after a string driver voltage has been applied to the gates of all of the string driver transistors in an array.
摘要翻译： 所选择的字线的电压通过从相邻字线电容耦合到所选字线的电压而增加到相应的串驱动晶体管能够驱动字线的电压。 在将编程电压施加到所选字线的串驱动晶体管之后，并且在将串驱动器电压施加到所有字的栅极之后，通过增加相邻字线的电压来将电压电容耦合到所选择的字线 的阵列驱动晶体管。
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6.发明授权Word line voltage boost system and method for non-volatile memory devices and memory devices and processor-based system using same 有权用于非易失性存储器件和存储器件的字线升压系统和方法以及使用它的基于处理器的系统公开(公告)号：US07924616B2
公开(公告)日：2011-04-12
申请号：US11795357
申请日：2007-05-04
IPC分类号： G11C16/04
摘要： The voltage of a selected word line is increased beyond the voltage to which a respective string driver transistor is capable of driving the word line by capacitively coupling a voltage to the selected word line from adjacent word lines. The voltage is capacitively coupled to the selected word line by increasing the voltages of the adjacent word lines after a programming voltage has been applied to a string driver transistor for the selected word line and after a string driver voltage has been applied to the gates of all of the string driver transistors in an array.
摘要翻译： 所选择的字线的电压通过从相邻字线电容耦合到所选字线的电压而增加到相应的串驱动晶体管能够驱动字线的电压。 在将编程电压施加到所选字线的串驱动晶体管之后，并且在将串驱动器电压施加到所有字的栅极之后，通过增加相邻字线的电压来将电压电容耦合到所选择的字线 的阵列驱动晶体管。
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7.发明申请Word Line Voltage Boost System and Method for Non-Volatile Memory Devices and Memory Devices and Processor-Based System Using Same 有权用于非易失性存储器件和存储器件的字线电压升压系统和方法以及使用其的基于处理器的系统公开(公告)号：US20100128534A1
公开(公告)日：2010-05-27
申请号：US11795357
申请日：2007-05-04
摘要： The voltage of a selected word line is increased beyond the voltage to which a respective string driver transistor is capable of driving the word line by capacitively coupling a voltage to the selected word line from adjacent word lines. The voltage is capacitively coupled to the selected word line by increasing the voltages of the adjacent word lines after a programming voltage has been applied to a string driver transistor for the selected word line and after a string driver voltage has been applied to the gates of all of the string driver transistors in an array.
摘要翻译： 所选择的字线的电压通过从相邻字线电容耦合到所选字线的电压而增加到相应的串驱动晶体管能够驱动字线的电压。 在将编程电压施加到所选字线的串驱动晶体管之后，并且在将串驱动器电压施加到所有字的栅极之后，通过增加相邻字线的电压来将电压电容耦合到所选字线 的阵列驱动晶体管。
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