公开(公告)号：US6027955A

公开(公告)日：2000-02-22

申请号：US771122

申请日：1996-12-20

申请人： Paul P. Lee ,  Robert M. Guidash ,  Teh-Hsuang Lee ,  Eric Gordon Stevens

发明人： Paul P. Lee ,  Robert M. Guidash ,  Teh-Hsuang Lee ,  Eric Gordon Stevens

IPC分类号： H01L27/146 ,  H01L27/148 ,  H01L21/18 ,  H01L21/329 ,  H01L21/336 ,  H01L27/14

CPC分类号： H01L27/14689 ,  H01L27/14609 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14831

摘要： The optimization of two technologies (CMOS and CCD) wherein a pinned photodiode is integrated into the image sensing element of an active pixel sensor. Pinned photodiodes are fabricated with CCD process steps into the active pixel architecture. Charge integrated within the active pixel pinned photodiode is transferred into the charge sensing node by a transfer gate. The floating diffusion is coupled CMOS circuitry that can provide the addressing capabilities of individual pixels. Alternatively, a buried channel photocapacitor can be used in place of the pinned photodiode.

摘要翻译： 两种技术（CMOS和CCD）的优化，其中钉扎光电二极管集成到有源像素传感器的图像感测元件中。 固定光电二极管通过CCD工艺步骤制造成有源像素架构。 集成在有源像素钉扎光电二极管内的电荷通过传输门传输到电荷感测节点。 浮动扩散是耦合的CMOS电路，可以提供各个像素的寻址能力。 或者，可以使用掩埋通道光电容器代替被钉扎的光电二极管。

公开(公告)号：US5703642A

公开(公告)日：1997-12-30

申请号：US316001

申请日：1994-09-30

申请人： Eric Gordon Stevens

发明人： Eric Gordon Stevens

IPC分类号： H01L27/148 ,  H04N5/361 ,  H04N5/372 ,  H04N5/335 ,  H04N3/14

CPC分类号： H04N5/37206 ,  H01L27/1485 ,  H01L27/14856 ,  H04N5/37213

摘要： The present invention teaches how to maintain temporally the increased collection region (depletion depth) of detectors within a solid-state image sensor. A novel clocking method is used to control charge transfer within charge coupled devices to reduce cross talk with a resulting improvement in the MTF and quantum efficiency. Specifically, the present invention employs a pulsing type of clocking technique wherein the duty cycle is adjusted to maximize the depletion region. These pulses are spaced equally from phase to phase within the multiphase clocking scheme. The present invention is specifically designed for high speed CCD devices in which improvements in the MTF and QE are desired. Time Delay Integration (TDI) image sensors are such devices that have high speed characteristics as a common requirement and the application of the present invention to these devices is discussed. Additionally, the application of the present invention to certain full frame and frame transfer devices having requirements for high speed characteristics will benefit from the teachings of the present invention.

摘要翻译： 本发明教导了如何在时间上维持固态图像传感器内的检测器的增加的收集区域（耗尽深度）。 一种新颖的计时方法用于控制电荷耦合器件中的电荷转移，以减少串扰，从而提高MTF和量子效率。 具体地，本发明采用脉冲式的计时技术，其中调整占空比以最大化耗尽区。 这些脉冲在多相时钟方案内相位相等。 本发明专门设计用于需要改进MTF和QE的高速CCD器件。 时间延迟积分（TDI）图像传感器是具有高速特性作为常见要求的装置，并且将本发明应用于这些装置进行了讨论。 此外，本发明对于具有高速特性要求的某些全帧和帧传送装置的应用将受益于本发明的教导。

公开(公告)号：US06297070B1

公开(公告)日：2001-10-02

申请号：US09436371

申请日：1999-11-08

申请人： Paul P. Lee ,  Robert M. Guidash ,  Teh-Hsuang Lee ,  Eric Gordon Stevens

发明人： Paul P. Lee ,  Robert M. Guidash ,  Teh-Hsuang Lee ,  Eric Gordon Stevens

IPC分类号： H01L2118

CPC分类号： H01L27/14609 ,  H01L27/14643

摘要： The optimization of two technologies (CMOS and CCD) wherein a pinned photodiode is integrated into the image sensing element of an active pixel sensor. Pinned photodiodes are fabricated with CCD process steps into the active pixel architecture. Charge integrated within the active pixel pinned photodiode is transferred into the charge sensing node by a transfer gate. The floating diffusion is coupled CMOS circuitry that can provide the addressing capabilities of individual pixels. Alternatively, a buried channel photocapacitor can be used in place of the pinned photodiode.

摘要翻译： 两种技术（CMOS和CCD）的优化，其中钉扎光电二极管集成到有源像素传感器的图像感测元件中。 固定光电二极管通过CCD工艺步骤制造成有源像素架构。 集成在有源像素钉扎光电二极管内的电荷通过传输门传输到电荷感测节点。 浮动扩散是耦合的CMOS电路，可以提供各个像素的寻址能力。 或者，可以使用掩埋通道光电容器代替被钉扎的光电二极管。

公开(公告)号：US5841159A

公开(公告)日：1998-11-24

申请号：US770414

申请日：1996-12-20

申请人： Paul P. Lee ,  Robert M. Guidash ,  Teh-Hsuang Lee ,  Eric Gordon Stevens

发明人： Paul P. Lee ,  Robert M. Guidash ,  Teh-Hsuang Lee ,  Eric Gordon Stevens

IPC分类号： H01L27/146 ,  H01L27/148 ,  H01L31/062 ,  H01L31/113

CPC分类号： H01L27/14689 ,  H01L27/14609 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14831

摘要： The optimization of two technologies (CMOS and CCD) wherein a pinned photodiode is integrated into the image sensing element of an active pixel sensor. Pinned photodiodes are fabricated with CCD process steps into the active pixel architecture. Charge integrated within the active pixel pinned photodiode is transferred into the charge sensing node by a transfer gate. The floating diffusion is coupled CMOS circuitry that can provide the addressing capabilities of individual pixels. Alternatively, a buried channel photocapacitor can be used in place of the pinned photodiode.

摘要翻译： 两种技术（CMOS和CCD）的优化，其中钉扎光电二极管集成到有源像素传感器的图像感测元件中。 固定光电二极管通过CCD工艺步骤制造成有源像素架构。 集成在有源像素钉扎光电二极管内的电荷通过传输门传输到电荷感测节点。 浮动扩散是耦合的CMOS电路，可以提供各个像素的寻址能力。 或者，可以使用掩埋通道光电容器代替被钉扎的光电二极管。