公开(公告)号：US4586109A

公开(公告)日：1986-04-29

申请号：US718136

申请日：1985-04-01

Applicant: Arthur J. Peters ,  Eugene A. Marks

Inventor： Arthur J. Peters ,  Eugene A. Marks

IPC: G01L9/00 ,  H01G7/00 ,  B05D5/12 ,  G01L9/12

CPC classification number: G01L9/0073 ,  Y10T29/43

Abstract: Silicon capacitive pressure sensors are produced by a batch-process method, comprising the steps of: (1) providing first and second wafers of conductive silicon; (2) oxidizing a surface of each wafer with a layer of silicon dioxide; (3) removing a predefined area of the silicon dioxide layer from a first one of the wafers, leaving an exposed surface of unoxidized silicon in the predefined area; (4) superimposing the second wafer onto the first wafer so that the silicon dioxide layer of the second wafer is in contact with the silicon dioxide layer of the first wafer; (5) fusing the two wafers together at their contacting silicon dioxide layers; (6) metallizing selected areas of the outer surfaces of the two wafers to form electrical contacts; and (7) cutting the wafers into individual pressure sensors. Each of the individual sensors so formed has a pair of opposed conductive silicon plates separated by a dielectric gap formed between the predefined unoxidized area of the first wafer and the opposed silicon dioxide layer of the second wafer. At least one of the plates is formed to be deflectable into the gap in response to the application of pressure to its outer surface.

Abstract translation: 硅电容式压力传感器是通过分批处理方法制造的，包括以下步骤：（1）提供导电硅的第一和第二晶片; （2）用二氧化硅层氧化每个晶片的表面; （3）从所述晶片的第一个中去除所述二氧化硅层的预定区域，在所述预定区域中留下未氧化硅的暴露表面; （4）将第二晶片叠加到第一晶片上，使得第二晶片的二氧化硅层与第一晶片的二氧化硅层接触; （5）将两个晶片在其接触二氧化硅层处熔合在一起; （6）金属化两个晶片的外表面的选定区域以形成电触点; 和（7）将晶片切割成单独的压力传感器。 如此形成的每个单独的传感器具有一对相对的导电硅板，该导电硅板由形成在第一晶片的预定未氧化区域和第二晶片的相对二氧化硅层之间的电介质间隙隔开。 响应于向其外表面施加压力，至少一个板形成为可偏转到间隙中。

公开(公告)号：US4128001A

公开(公告)日：1978-12-05

申请号：US833818

申请日：1977-09-16

Applicant: Eugene A. Marks

Inventor： Eugene A. Marks

IPC: G01G3/14 ,  G01L1/22 ,  G01L1/26 ,  G01L25/00

CPC classification number: G01L1/2243 ,  G01G3/1412 ,  G01L1/26

Abstract: A parallel beam load cell wherein sensitivity to transverse load position changes is reduced by changing the shape of one of the beams in the vicinity of one strain gage element whereby the neutral axis of said beam is changed with respect to said strain gage element. Longitudinal load position sensitivity is reduced by changing the cross sectional area of one of the beams adjacent one strain gage element.

Abstract translation: 通过改变一个应变计元件附近的一个光束的形状，从而相对于所述应变计元件改变所述光束的中性轴线而改变对横向载荷位置变化的灵敏度的平行光束称重传感器。 通过改变邻近一个应变计元件的一个梁的横截面积来减小纵向载荷位置灵敏度。

公开(公告)号：US4600912A

公开(公告)日：1986-07-15

申请号：US695126

申请日：1985-01-25

Applicant: Eugene A. Marks ,  Arthur J. Peters

Inventor： Eugene A. Marks ,  Arthur J. Peters

IPC: G01L9/00 ,  H01L29/84

CPC classification number: H01L29/84 ,  G01L9/0055

Abstract: A diaphragm-type pressure sensor employs a monocrystalline wafer as a pressure-responsive diaphragm. The wafer has a central active area surrounded by a first bonding area on one side and a second bonding area on the other side. The first bonding area is attached by a first layer of bonding material to a base, and the second bonding area is attached by a second layer of bonding material to a cap. The inside diameter of the first bonding layer is greater than the inside diameter of the second bonding layer by an amount of at least approximately six times the thickness of the diaphragm. This disparity between the respective inside diameters of the two bonding layers results in the relief of radially-directed tensile loading on the first bonding layer when a pressure to be measured is applied to the first side of the diaphragm. Consequently, the probability of a fracture occurring in this bonding layer is minimized.

Abstract translation: 膜片式压力传感器采用单晶晶片作为压力响应膜片。 晶片具有由一侧的第一接合区域和另一侧的第二接合区域包围的中央有源区域。 第一接合区域通过第一层接合材料附接到基底，并且第二接合区域通过第二接合材料层附接到盖子。 第一接合层的内径比第二接合层的内径大至少大约为隔膜厚度的六倍。 当测量的压力施加到隔膜的第一侧时，两个粘合层的各自内径之间的差异导致在第一粘合层上的径向拉伸载荷的减轻。 因此，在该接合层中发生断裂的可能性最小化。