公开(公告)号：US07994476B2

公开(公告)日：2011-08-09

申请号：US11935335

申请日：2007-11-05

Applicant: Eugene T. Bullock

Inventor： Eugene T. Bullock

IPC: G01N23/00 ,  G21K7/00 ,  A61N5/00

CPC classification number: G01R31/2831 ,  G01R31/307 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/24485 ,  H01J2237/24564 ,  H01J2237/24592

Abstract: A system for electrically testing a semiconductor wafer, the system including (a) at least one charged particle beam focus effecting component and (b) at least one detector adapted to collect charged particles scattered from the wafer; wherein the system is adapted to scan a first area of a sample by a de-focused charged particle beam so as to affect a charging of the first area, scan at least a portion of the first area by a focused charged particle beam and detect electrons scattered from the at least portion. The system scans the at least portion while the first area remains affected by the de-focused charged particle beam. A method for electrically testing a semiconductor wafer includes scanning a first area of a sample by a de-focused charged particle beam so as to affect a charging of the first area; and scanning at least a portion of the first area by a focused charged particle beam while detecting electrons scattered from the at least portion, the at least portion being scanned while the first area remains affected by charging introduced by the de-focused charged particle beam.

Abstract translation: 一种用于电测试半导体晶片的系统，所述系统包括（a）至少一个带电粒子束聚焦效应元件和（b）至少一个检测器，适于收集从晶片散射的带电粒子; 其中所述系统适于通过去聚焦的带电粒子束扫描样品的第一区域，以便影响所述第一区域的充电，通过聚焦的带电粒子束扫描所述第一区域的至少一部分并检测电子 从至少部分分散。 该系统扫描该至少部分，同时该第一区域仍然受到解聚焦的带电粒子束的影响。 一种用于电测试半导体晶片的方法包括通过去聚焦的带电粒子束扫描样品的第一区域，以影响第一区域的充电; 以及通过聚焦的带电粒子束扫描第一区域的至少一部分，同时检测从至少部分散射的电子，所述至少部分被扫描，同时第一区域仍然受到由未聚焦的带电粒子束引入的电荷的影响。

公开(公告)号：US07902849B2

公开(公告)日：2011-03-08

申请号：US11619496

申请日：2007-01-03

Applicant: Eugene T. Bullock

Inventor： Eugene T. Bullock

IPC: G01R31/305

CPC classification number: G01R31/2884 ,  G01R31/305 ,  H01L22/14

Abstract: Herein are described layouts of test structures and scanning methodologies that allow large probe currents to be used so as to allow the detection of resistive defects with a resistance lower than 1 MΩ while at the same time allowing a sufficient degree of localization to be obtained for root cause failure analysis. The detection of resistances lower than 1 MΩ nominally requires a probe current greater than 1 micro ampere for detection on an electron beam inspection system.

Abstract translation: 这里描述了允许使用大的探针电流的测试结构和扫描方法的布局，以便允许以低于1MΩ的电阻检测电阻缺陷; 同时允许根本原因故障分析获得足够的定位。 电阻低于1 M＆OHgr的检测; 名义上需要大于1微安的探针电流，以便在电子束检查系统上进行检测。

公开(公告)号：US20090114817A1

公开(公告)日：2009-05-07

申请号：US11935335

申请日：2007-11-05

Applicant: Eugene T. Bullock

Inventor： Eugene T. Bullock

IPC: G01N23/00

CPC classification number: G01R31/2831 ,  G01R31/307 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/24485 ,  H01J2237/24564 ,  H01J2237/24592

Abstract: A system for electrically testing a semiconductor wafer, the system including (a) at least one charged particle beam focus effecting component and (b) at least one detector adapted to collect charged particles scattered from the wafer; wherein the system is adapted to scan a first area of a sample by a de-focused charged particle beam so as to affect a charging of the first area, scan at least a portion of the first area by a focused charged particle beam and detect electrons scattered from the at least portion. The system scans the at least portion while the first area remains affected by the de-focused charged particle beam. A method for electrically testing a semiconductor wafer includes scanning a first area of a sample by a de-focused charged particle beam so as to affect a charging of the first area; and scanning at least a portion of the first area by a focused charged particle beam while detecting electrons scattered from the at least portion, the at least portion being scanned while the first area remains affected by charging introduced by the de-focused charged particle beam.

Abstract translation: 一种用于电测试半导体晶片的系统，所述系统包括（a）至少一个带电粒子束聚焦效应元件和（b）至少一个检测器，适于收集从晶片散射的带电粒子; 其中所述系统适于通过去聚焦的带电粒子束扫描样品的第一区域，以便影响所述第一区域的充电，通过聚焦的带电粒子束扫描所述第一区域的至少一部分并检测电子 从至少部分分散。 该系统扫描该至少部分，同时该第一区域仍然受到解聚焦的带电粒子束的影响。 一种用于电测试半导体晶片的方法包括通过去聚焦的带电粒子束扫描样品的第一区域，以影响第一区域的充电; 以及通过聚焦的带电粒子束扫描第一区域的至少一部分，同时检测从至少部分散射的电子，所述至少部分被扫描，同时第一区域仍然受到由未聚焦的带电粒子束引入的电荷的影响。