公开(公告)号：US06499492B1

公开(公告)日：2002-12-31

申请号：US09633893

申请日：2000-08-07

申请人： Sung-bum Cho ,  Hak-pil Kim ,  Eun-hee Shin ,  Baik-soon Choi

发明人： Sung-bum Cho ,  Hak-pil Kim ,  Eun-hee Shin ,  Baik-soon Choi

IPC分类号： B08B900

CPC分类号： H01J37/32935 ,  H01J37/32963 ,  Y10S438/905

摘要： A plasma process apparatus having a plasma chamber with in situ monitoring, a monitoring method, and a method for in situ cleaning a plasma chamber. The apparatus includes a sampling manifold which induces flow of a sample gas from a plasma chamber through the manifold. A gas analyzer analyzes the sample gas flowing through the sampling manifold. The in situ monitoring method monitors an initial gas to establish background levels, and bakes the apparatus to reduce contaminants, if necessary. The monitoring method then monitors a process reaction and, after unloading a wafer and discharging a waste gas, monitors an in situ cleaning reaction. Monitoring involves inducing flow of a gas from the plasma chamber through the sampling manifold, and then analyzing the gas in the manifold with a gas analyzer. The cleaning method includes using a mixture of sulfur hexafluoride and chlorine to clean the plasma chamber after etching a polysilicon layer.

摘要翻译： 一种具有等离子体室的等离子体处理装置，其具有原位监测，监测方法和用于原位清洗等离子体室的方法。 该装置包括采样歧管，其引导来自等离子体室的样品气体流过歧管。 气体分析仪分析流过采样歧管的样品气体。 原位监测方法监测初始气体以建立背景水平，并且如有必要，烘烤设备以减少污染物。 然后监测方法监测过程反应，并且在卸载晶片并排出废气之后，监测原位清洁反应。 监测涉及通过采样歧管引导来自等离子体室的气体流，然后用气体分析仪分析歧管中的气体。 清洗方法包括在蚀刻多晶硅层之后使用六氟化硫和氯的混合物来清洁等离子体室。

公开(公告)号：US06335284B1

公开(公告)日：2002-01-01

申请号：US09386360

申请日：1999-08-31

申请人： Baik-soon Choi ,  Jae-saeng Lee ,  Eun-hee Shin ,  Sung-bum Cho

发明人： Baik-soon Choi ,  Jae-saeng Lee ,  Eun-hee Shin ,  Sung-bum Cho

IPC分类号： H01L21461

CPC分类号： H01L21/32136 ,  H01L21/76838

摘要： A metallization process for manufacturing semiconductor devices and a system that uses the same that minimizes corrosion failures in aluminum patterns. The process for the metal pattern formation is carried out by loading a semiconductor wafer into an etching chamber, the semiconductor wafer having a photoresist pattern formed over a metal material layer, stabilizing the environment in the etching chamber, main-etching the metal material layer to the etch-end point by using the photoresist pattern as an etch mask while supplying etching gas containing chlorine (Cl2) into the etching chamber, over-etching the metal material layer for a certain period of time over the etch-end point so as to form metal patterns, purging the etching chamber after the over-etching step, and unloading the wafer from the etching chamber. The pressure in the transfer module is optimized, and the load lock chamber is continuously purged.

摘要翻译： 用于制造半导体器件的金属化工艺和使用该金属化工艺的系统，其最小化铝图案中的腐蚀失效。 通过将半导体晶片装载到蚀刻室中，半导体晶片具有形成在金属材料层上的光致抗蚀剂图案，稳定蚀刻室中的环境，将金属材料层主蚀刻到 通过使用光致抗蚀剂图案作为蚀刻掩模，同时将蚀刻气体（Cl2）提供到蚀刻室中，在蚀刻终点上过刻蚀金属材料层一段时间，从而蚀刻终点，以便 形成金属图案，在过蚀刻步骤之后净化蚀刻室，并从蚀刻室卸载晶片。 传递模块的压力得到优化，负载锁定室被持续清洗。

公开(公告)号：US06179955B2

公开(公告)日：2001-01-30

申请号：US09317138

申请日：1999-05-24

申请人： Eun-hee Shin ,  Sung-bum Cho ,  Baik-soon Choi ,  Young-koo Lee

发明人： Eun-hee Shin ,  Sung-bum Cho ,  Baik-soon Choi ,  Young-koo Lee

IPC分类号： H01L2100

CPC分类号： H01L21/67069 ,  H01J37/321 ,  H01J37/32477

摘要： A dielectric window of a dry etching apparatus for manufacturing semiconductor devices is shaped so that areas of high density plasma in the etching apparatus correspond to portions of the dielectric window further away from the wafer and areas of lower density plasma correspond to portions of the dielectric window closer to the wafer. For example, the dielectric window may be curve inwards at its center in a concave-shape.

摘要翻译： 用于制造半导体器件的干式蚀刻装置的电介质窗形状使得蚀刻装置中的高密度等离子体的区域对应于更远离晶片的电介质窗口的部分，而较低密度等离子体的区域对应于电介质窗口的部分 更靠近晶圆。 例如，电介质窗口可以在其中心处向内弯曲成凹形。

公开(公告)号：US06251241B1

公开(公告)日：2001-06-26

申请号：US09546557

申请日：2000-04-10

申请人： Eun-Hee Shin ,  Jin-Man Kim ,  Baik-Soon Choi ,  Hun Cha

发明人： Eun-Hee Shin ,  Jin-Man Kim ,  Baik-Soon Choi ,  Hun Cha

IPC分类号： C23C1434

CPC分类号： H01J37/321

摘要： An inductive-coupled plasma apparatus employs a shield to reduce sputter contamination. A method for manufacturing the shield is included. An apparatus for generating a high-density plasma includes a process chamber having a dielectric window located along a plane, a coil located outside the process chamber proximate to the dielectric window and substantially parallel to the plane, and a shield located between the coil and the dielectric window. The shield has multiple openings, wherein the multiple openings of the shield are disposed at locations corresponding to areas between the turns of the coil.

摘要翻译： 电感耦合等离子体装置采用屏蔽来减少溅射污染。 包括制造屏蔽的方法。 一种用于产生高密度等离子体的设备包括具有沿着平面定位的介电窗口的处理室，位于处理室外部的线圈，靠近电介质窗口并基本上平行于该平面，以及位于线圈和 电介质窗。 屏蔽件具有多个开口，其中屏蔽件的多个开口设置在对应于线圈匝之间的区域的位置处。

公开(公告)号：US6146492A

公开(公告)日：2000-11-14

申请号：US172140

申请日：1998-10-14

申请人： Sung-bum Cho ,  Hak-pil Kim ,  Eun-hee Shin ,  Baik-soon Choi

发明人： Sung-bum Cho ,  Hak-pil Kim ,  Eun-hee Shin ,  Baik-soon Choi

IPC分类号： H05H1/00 ,  C23F4/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H05H1/46 ,  C23C16/00

CPC分类号： H01J37/32935 ,  H01J37/32963 ,  Y10S438/905

摘要： A plasma process apparatus having a plasma chamber with in situ monitoring, a monitoring method, and a method for in situ cleaning a plasma chamber. The apparatus includes a sampling manifold which induces flow of a sample gas from a plasma chamber through the manifold. A gas analyzer analyzes the sample gas flowing through the sampling manifold. The in situ monitoring method monitors an initial gas to establish background levels, and bakes the apparatus to reduce contaminants, if necessary. The monitoring method then monitors a process reaction and, after unloading a wafer and discharging a waste gas, monitors an in situ cleaning reaction. Monitoring involves inducing flow of a gas from the plasma chamber through the sampling manifold, and then analyzing the gas in the manifold with a gas analyzer. The cleaning method includes using a mixture of sulfur hexafluoride and chlorine to clean the plasma chamber after etching a polysilicon layer.

摘要翻译： 一种具有等离子体室的等离子体处理装置，其具有原位监测，监测方法和用于原位清洗等离子体室的方法。 该装置包括采样歧管，其引导来自等离子体室的样品气体流过歧管。 气体分析仪分析流过采样歧管的样品气体。 原位监测方法监测初始气体以建立背景水平，并且如有必要，烘烤设备以减少污染物。 然后监测方法监测过程反应，并且在卸载晶片并排出废气之后，监测原位清洁反应。 监测涉及通过采样歧管引导来自等离子体室的气体流，然后用气体分析仪分析歧管中的气体。 清洗方法包括在蚀刻多晶硅层之后使用六氟化硫和氯的混合物来清洁等离子体室。

公开(公告)号：US06585907B2

公开(公告)日：2003-07-01

申请号：US09839162

申请日：2001-04-23

申请人： Eun-Hee Shin ,  Jin-Man Kim ,  Baik-Soon Choi ,  Hun Cha

发明人： Eun-Hee Shin ,  Jin-Man Kim ,  Baik-Soon Choi ,  Hun Cha

IPC分类号： G01L2130

CPC分类号： H01J37/321

摘要： An inductive-coupled plasma apparatus employs a shield to reduce sputter contamination. A method for manufacturing the shield is included. An apparatus for generating a high-density plasma includes a process chamber having a dielectric window located along a plane, a coil located outside the process chamber proximate to the dielectric window and substantially parallel to the plane, and a shield located between the coil and the dielectric window. The shield has multiple openings, wherein the multiple openings of the shield are disposed at locations corresponding to areas between the turns of the coil.

摘要翻译： 电感耦合等离子体装置采用屏蔽来减少溅射污染。 包括制造屏蔽的方法。 一种用于产生高密度等离子体的设备包括具有沿着平面定位的介电窗口的处理室，位于处理室外部的线圈，靠近电介质窗口并且基本上平行于该平面，以及位于线圈和 电介质窗。 屏蔽件具有多个开口，其中屏蔽件的多个开口设置在对应于线圈匝之间的区域的位置处。