公开(公告)号：US07521342B2

公开(公告)日：2009-04-21

申请号：US11896883

申请日：2007-09-06

申请人： Chen-Bau Wu ,  Fang-Cheng Lui ,  Shun-Liang Hsu

发明人： Chen-Bau Wu ,  Fang-Cheng Lui ,  Shun-Liang Hsu

IPC分类号： H01L21/04

CPC分类号： H01L29/105 ,  H01L29/1083 ,  H01L29/42368 ,  H01L29/66568 ,  H01L29/7833 ,  H01L29/7836

摘要： A semiconductor structure with high-voltage sustaining capability. A semiconductor structure with high-voltage sustaining capability includes a first well region of a first conductivity type. A pair of second well regions of a second conductivity type opposite to the first conductivity type are respectively disposed adjacent to the first well region and an anti-punch through region of the first conductivity type is disposed in at least the lower portion of the first well region to increase the doping concentration therein. Due to the ion supplementation of the anti-punch through region, the size of a semiconductor structure can be further reduced without affecting the HV sustaining capability and undesired effects such as punch-through effects can be prevented.

摘要翻译： 具有高电压维持能力的半导体结构。 具有高电压维持能力的半导体结构包括第一导电类型的第一阱区域。 与第一导电类型相反的第二导电类型的一对第二阱区分别设置为与第一阱区相邻，并且第一导电类型的抗穿通区域设置在至少第一阱的下部 区域以增加其中的掺杂浓度。 由于抗穿透区域的离子补充，可以进一步降低半导体结构的尺寸而不影响HV维持能力，并且可以防止诸如穿透效果等不期望的影响。

公开(公告)号：US20080085579A1

公开(公告)日：2008-04-10

申请号：US11896883

申请日：2007-09-06

申请人： Chen-Bau Wu ,  Fang-Cheng Lui ,  Shun-Liang Hsu

发明人： Chen-Bau Wu ,  Fang-Cheng Lui ,  Shun-Liang Hsu

IPC分类号： H01L21/8238

CPC分类号： H01L29/105 ,  H01L29/1083 ,  H01L29/42368 ,  H01L29/66568 ,  H01L29/7833 ,  H01L29/7836

摘要： A semiconductor structure with high-voltage sustaining capability. A semiconductor structure with high-voltage sustaining capability includes a first well region of a first conductivity type. A pair of second well regions of a second conductivity type opposite to the first conductivity type are respectively disposed adjacent to the first well region and an anti-punch through region of the first conductivity type is disposed in at least the lower portion of the first well region to increase the doping concentration therein. Due to the ion supplementation of the anti-punch through region, the size of a semiconductor structure can be further reduced without affecting the HV sustaining capability and undesired effects such as punch-through effects can be prevented.

摘要翻译： 具有高电压维持能力的半导体结构。 具有高电压维持能力的半导体结构包括第一导电类型的第一阱区域。 与第一导电类型相反的第二导电类型的一对第二阱区分别设置为与第一阱区相邻，并且第一导电类型的抗穿通区域设置在至少第一阱的下部 区域以增加其中的掺杂浓度。 由于抗穿透区域的离子补充，可以进一步降低半导体结构的尺寸而不影响HV维持能力，并且可以防止诸如穿透效果等不期望的影响。

公开(公告)号：US07279767B2

公开(公告)日：2007-10-09

申请号：US11048914

申请日：2005-02-03

申请人： Chen-Bau Wu ,  Fang-Cheng Lui ,  Shun-Liang Hsu

发明人： Chen-Bau Wu ,  Fang-Cheng Lui ,  Shun-Liang Hsu

IPC分类号： H01L23/58

CPC分类号： H01L29/105 ,  H01L29/1083 ,  H01L29/42368 ,  H01L29/66568 ,  H01L29/7833 ,  H01L29/7836

摘要： A semiconductor structure with high-voltage sustaining capability. A semiconductor structure with high-voltage sustaining capability includes a first well region of a first conductivity type. A pair of second well regions of a second conductivity type opposite to the first conductivity type are respectively disposed adjacent to the first well region and an anti-punch through region of the first conductivity type is disposed in at least the lower portion of the first well region to increase the doping concentration therein. Due to the ion supplementation of the anti-punch through region, the size of a semiconductor structure can be further reduced without affecting the HV sustaining capability and undesired effects such as punch-through effects can be prevented.

摘要翻译： 具有高电压维持能力的半导体结构。 具有高电压维持能力的半导体结构包括第一导电类型的第一阱区域。 与第一导电类型相反的第二导电类型的一对第二阱区分别设置为与第一阱区相邻，并且第一导电类型的抗穿通区域设置在至少第一阱的下部 区域以增加其中的掺杂浓度。 由于抗穿透区域的离子补充，可以进一步降低半导体结构的尺寸而不影响HV维持能力，并且可以防止诸如穿透效果等不期望的影响。

公开(公告)号：US20060170060A1

公开(公告)日：2006-08-03

申请号：US11048914

申请日：2005-02-03

申请人： Chen-Bau Wu ,  Fang-Cheng Lui ,  Shun-Liang Hsu

发明人： Chen-Bau Wu ,  Fang-Cheng Lui ,  Shun-Liang Hsu

IPC分类号： H01L29/76

CPC分类号： H01L29/105 ,  H01L29/1083 ,  H01L29/42368 ,  H01L29/66568 ,  H01L29/7833 ,  H01L29/7836

摘要： A semiconductor structure with high-voltage sustaining capability. A semiconductor structure with high-voltage sustaining capability includes a first well region of a first conductivity type. A pair of second well regions of a second conductivity type opposite to the first conductivity type are respectively disposed adjacent to the first well region and an anti-punch through region of the first conductivity type is disposed in at least the lower portion of the first well region to increase the doping concentration therein. Due to the ion supplementation of the anti-punch through region, the size of a semiconductor structure can be further reduced without affecting the HV sustaining capability and undesired effects such as punch-through effects can be prevented.