公开(公告)号：US06233046B1

公开(公告)日：2001-05-15

申请号：US09343207

申请日：1999-06-29

Applicant: Simone Alba ,  Claudio Savoia ,  Enrico Bellandi ,  Francesca Canali

Inventor： Simone Alba ,  Claudio Savoia ,  Enrico Bellandi ,  Francesca Canali

IPC: G01B1106

CPC classification number: G01B11/0641 ,  G01N21/211

Abstract: The method described comprises the following steps: measuring, with a spectroscopic ellipsometer, the values of two quantities which are dependent on the thickness of the altered silicon layer and of a thin layer of silicon dioxide grown thereon with variations in the wavelength of the light of the measurement beam of the ellipsometer, obtaining from these measured values respective experimental curves representing the two quantities as functions of the wavelength, calculating the theoretical curves of the two quantities as functions of the wavelength considering the refractive indices and absorption coefficients of silicon dioxide and of the altered silicon as known parameters and the thickness of the altered silicon layer and the thickness of the thin silicon dioxide layer as unknowns, comparing the theoretical curves with the respective experimental curves in order to determine for which values of the unknowns the curves under comparison approximate to one another best, and extracting from the values determined the value which relates to the thickness of the altered silicon layer. The time required for the measurements and calculations is a few minutes.

Abstract translation: 所描述的方法包括以下步骤：用分光椭偏仪测量取决于改变的硅层的厚度和生长在其上的二氧化硅薄层的两个量的值，其中光的波长有变化 椭圆计的测量光束，从这些测量值获得表示两个量作为波长函数的各实验曲线，考虑二氧化硅的折射率和吸收系数计算两个量的函数的理论曲线，以及 改变的硅作为已知参数，并且改变的硅层的厚度和薄二氧化硅层的厚度为未知数，将理论曲线与各实验曲线进行比较，以确定未知量的哪些值比较曲线近似 彼此最好，并且提取 g的值取决于与改变的硅层的厚度有关的值。测量和计算所需的时间是几分钟。

公开(公告)号：US06313040B1

公开(公告)日：2001-11-06

申请号：US09406903

申请日：1999-09-28

Applicant: Lorena Beghin ,  Francesca Canali ,  Francesco Cazzaniga ,  Luca Riva ,  Carmelo Romeo

Inventor： Lorena Beghin ,  Francesca Canali ,  Francesco Cazzaniga ,  Luca Riva ,  Carmelo Romeo

IPC: H01L21302

CPC classification number: H01L21/76802 ,  H01L21/31144

Abstract: A process for etching a dielectric layer, including the steps of forming, over the dielectric layer, a layer of polysilicon, forming over the layer of polysilicon a photoresist mask layer, etching the layer of polysilicon using the photoresist mask layer as an etching mask for selectively removing the layer of polysilicon, removing the photoresist mask layer from over the layer of polysilicon, etching the dielectric layer using the layer of polysilicon as a mask. Subsequently, the layer of polysilicon is converted into a layer of a transition metal silicide, and the layer of transition metal silicide is etched for selectively removing the latter from over the dielectric layer.

Abstract translation: 一种用于蚀刻电介质层的方法，包括以下步骤：在电介质层上形成多晶硅层，在多晶硅层上形成光致抗蚀剂掩模层，使用光致抗蚀剂掩模层蚀刻多晶硅层作为蚀刻掩模， 选择性地去除多晶硅层，从多晶硅层上去除光致抗蚀剂掩模层，使用多晶硅层作为掩模蚀刻电介质层。 随后，将多晶硅层转变为过渡金属硅化物层，并且蚀刻过渡金属硅化物层，以从介质层上方选择性地将其去除。