摘要:
An integrated circuit 210 has a power grid formed from a first set of power buses 201a and 202a on a metal interconnect level M1, a second set of power buses 203a and 204a on interconnect level M4, and a third set of power buses 205a and 206a on interconnect level M5. The set of power buses on level M4 are oriented in the same direction as the set of power buses on level M1, and both sets of buses are located coincidentally. A high power logic cell 220 is pre-defined with a set of M1-M4 power vias 221 and 222 so that logic cell 220 can be positioned in a horizontal row unconstrained by pre-positioned M1-M4 power vias. Dummy cell 230 with M1-M4 power vias is positioned as needed so as not to exceed a maximum strapping distance D1. A maximum value for distance D1 is selected based on dynamic power requirements of nearby logic cells 250a-n as determined by simulation. A method for designing and fabricating integrated circuit 210 is described.
摘要:
A clock generation circuit 122 with a selectable non-overlap time period is described for use on an integrated circuit. A master clock signal M which has a latching edge is formed in response to a reference clock signal fclk. A slave clock signal S which has a driving edge is also formed in response to the reference clock signal. The driving edge of slave clock S is delayed by a non-overlap feedback path 504 so that the driving edge is delayed by the non-overlap time period after the latching edge of master clock M. The value of the non-overlap time period is selected by switching delay circuitry 531 in or out of the non-overlap feedback path on signal line 504. A control signal STRSTST is set high or low to select the value of the non-overlap time period. A sense circuit 561 or a scan latch 562 also can select the non-overlap time period.
摘要:
A compensatory memory system is described. This memory system substantially improves performance by adapting an associated delay in a way that optimizes circuit performance.
摘要:
A method and apparatus for reducing failures due to bit line coupling and reducing power consumption in a memory (10). The method comprises precharging a first group of bitlines (22) to a first voltage level. Other bit lines (22) are maintained at a second voltage level. After data has been read from the memory (10), the first group of bit lines (22) is discharged to the second voltage level.
摘要:
A method and apparatus are disclosed for self-timing the precharge of bit lines (22) in a memory array. A reference column bit line (26) is charged to create a reference column voltage. The bit lines (22) in the memory array (12) are precharged until the reference voltage exceeds a first threshold.
摘要:
In deep submicron technologies, coupling capacitance significantly dominates the total parasitic capacitance. This causes crosstalk noise to be induced on quiescent signals which could lead to catastrophic failures. A method is provided for extracting parasitic data in a hierarchical manner from a trial layout of the integrated circuit. Intracellular parasitic data representative each cell type used in the integrated circuit is extracted only once, regardless of the number of times the cell is instantiated in the integrated circuit. For each instance of each cell, a portion of intercell signal lines that are routed over that instance of the cell are cut out in cookie cutter fashion by specifying an area in the trial layout corresponding to the instance of the cell such that the portion of intercell signal lines within the area can be processed apart from the remaining portion of the intercell signal lines. Each cutout portion of the over the cell routing (OCR) is combined with the respective cell instance and OCR parasitic data is extracted with reference to the respective cell. For each cell instance, the intracellular parasitic data derived once for the cell is combined with the OCR parasitic information derived for that cell instance in order to form a coupled simulation model.
摘要:
A method for designing and fabricating an integrated circuit is described. An increase or a decrease in a total propagation delay time 311 of a signal on a victim net 203 is accurately modeled using a modified decoupled simulation model 300. Victim net 203 is modeled as a distributed capacitor 320a-c that has a total value equal to Cgnd+2*K*Ccoup. A match propagation delay time which includes a variation in propagation delay caused by signal coupling from aggressor nets located adjacent to the victim net is determined by simulating a representative circuit using a coupled distributed load simulation model to accurately determine the match propagation delay time. K is determined using an equation in which K=1+(match delay−unmodified delay)/(2*R*Ccoup). R is the effective drive resistance of a buffer which drives the victim net and associated signal trace resistance.
摘要翻译:描述了一种用于设计和制造集成电路的方法。 牺牲网203上的信号的总传播延迟时间311的增加或减少使用修改的解耦仿真模型300被精确地建模。受害网203被建模为分布式电容器320a-c,其总值等于 Cgnd + 2 * K * Ccoup。 通过使用耦合的分布式负载仿真模型模拟代表性电路来精确地确定匹配传播延迟时间,来确定包括由与受害网邻近的侵扰网络的信号耦合引起的传播延迟变化的匹配传播延迟时间。 K使用K = 1 +(匹配延迟未修改延迟)/(2 * R * Ccoup)的等式确定。 R是驱动受害网的缓冲器的有效驱动电阻和相关的信号迹线电阻。
摘要:
A method for designing and fabricating an integrated circuit is disclosed. Signal line interconnect widths are determined by performing an electromigration analysis on a trial layout of the integrated circuit. A representative circuit for an integrated circuit is designed and a trial layout is created that includes a plurality of nets. A preprocessor 505 eliminates nets that do not need further validation. An extraction process 510 generates an RC network representation of each remaining net that is to be validated to form a distributed load simulation model. Distributed capacitance and resistance of signal lines is included with load capacitance of receivers to provide an accurate profile of current flow. A profile of current flowing in the signal line of each net is determined by simulating the operation of each net using simulator 517. Peak current, RMS current and average current is determined. Post processor 520 determines if electromigration parameters are violated based on the current profile determined for each net. Widths for various segments of signal lines in the various nets are selected to be greater than or equal to a minimum width determined by post processor 520.
摘要:
A compensatory memory system is described. This memory system substantially improves performance by adapting an associated delay in a way that optimizes circuit performance.
摘要:
An integrated circuit 210 has a power grid formed from a first set of power buses 201a and 202a on a metal interconnect level M1, a second set of power buses 203a and 204a on interconnect level M4, and a third set of power buses 205a and 206a on inter-connect level M5. The set of power buses on level M4 are oriented in the same direction as the set of power buses on level M1, and both sets of buses are located coincidentally. A high power logic cell 220 is pre-defined with a set of M1-M4 power vias 221 and 222 so that logic cell 220 can be positioned in a horizontal row unconstrained by pre-positioned M1-M4 power vias. Dummy cell 230 with M1-M4 power vias is positioned as needed so as not to exceed a maximum strapping distance D1. A maximum value for distance D1 is selected based on dynamic power requirements of nearby logic cells 250a-n as determined by simulation. A method for designing and fabricating integrated circuit 210 is described.