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公开(公告)号:US5203076A
公开(公告)日:1993-04-20
申请号:US812332
申请日:1991-12-23
IPC分类号: H01L21/56
CPC分类号: H01L21/563 , H01L24/28 , H01L2224/16225 , H01L2224/73203 , H01L2224/73204 , H01L2224/83102 , H01L2224/92125 , H01L2924/01033 , H01L2924/01082 , H01L2924/14 , Y10S428/901 , Y10T29/49144
摘要: A method of attaching an integrated circuit (10) to a substrate (20) starts with electrically interconnecting (14) the integrated circuit on the substrate. Next, a bead of underfill material (22) is provided on the substrate (20) about the periphery (24) of the integrated circuit (10). At least a partial vacuum (34) is then applied to the integrated circuit (10) and the substrate (20) to substantially evacuate the area (18) between the integrated circuit (10) and the substrate (20). Finally, fluid pressure (42) is applied to the integrated circuit (10) and the substrate (20) to force at least a portion of the underfill material (22) into the area (18) between the integrated circuit (10) and the substrate (20).
摘要翻译: 将集成电路(10)附接到衬底(20)的方法从将衬底上的集成电路电连接(14)开始。 接下来,围绕集成电路(10)的周边(24)在基板(20)上设置有底部填充材料(22)的小珠。 至少部分真空(34)然后被施加到集成电路(10)和基板(20),以基本上抽出集成电路(10)和基板(20)之间的区域(18)。 最后,将流体压力(42)施加到集成电路(10)和基板(20)以迫使底部填充材料(22)的至少一部分进入集成电路(10)和集成电路(10)之间的区域(18) 衬底(20)。
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公开(公告)号:US5262674A
公开(公告)日:1993-11-16
申请号:US866951
申请日:1992-04-09
IPC分类号: H01L21/58 , H01L21/60 , H01L23/538 , H01L23/02 , H01L39/02
CPC分类号: H01L24/83 , H01L23/538 , H01L24/32 , H01L2224/05554 , H01L2224/2919 , H01L2224/32057 , H01L2224/48091 , H01L2224/49175 , H01L2224/73265 , H01L2224/8319 , H01L2224/83385 , H01L2224/8385 , H01L24/48 , H01L2924/00014 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01079 , H01L2924/01082 , H01L2924/01087 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/0781 , H01L2924/14 , H01L2924/15787
摘要: Epoxy bonding between an IC chip and a chip carrier is strengthened by creating substantially rougher oxidized surfaces within substantially smooth gold surfaces of a die paddle portion of the chip carrier.
摘要翻译: IC芯片和芯片载体之间的环氧粘合通过在芯片载体的芯片桨形部分的基本平滑的金表面内形成基本上较粗糙的氧化表面而被加强。
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