公开(公告)号：US06455331B2

公开(公告)日：2002-09-24

申请号：US09867364

申请日：2001-05-29

申请人： Roy Yu ,  Kamalesh S. Desai ,  Peter A. Franklin ,  Suryanarayana Kaja ,  Kimberley A. Kelly ,  Yeeling L. Lee ,  Arthur G. Merryman ,  Frank R. Morelli ,  Thomas A. Wassick

发明人： Roy Yu ,  Kamalesh S. Desai ,  Peter A. Franklin ,  Suryanarayana Kaja ,  Kimberley A. Kelly ,  Yeeling L. Lee ,  Arthur G. Merryman ,  Frank R. Morelli ,  Thomas A. Wassick

IPC分类号： H01L2100

CPC分类号： H01L21/485 ,  H05K3/225

摘要： A device repair process that includes removing a passivation polyimide layer. The passivation polyimide layer is removed using a first-half ash followed by a second-half ash. The device is rotated during the second-half ash. The device is then cleaned using sodium hydroxide (NaOH) and a subsequent light ash step is implemented. After the passivation polyimide layer is removed, a seed layer is deposited on the device. A photoresist is formed on the seed layer and bond sites are formed in the photoresist. Repair metallurgy is plated through the bond sites. The bond sites are plated by coupling the device to a fixture and applying the current for plating to the fixture. The contact between the device and the fixture is made though bottom surface metallurgy. After plating, the residual seed layer is removed and a laser delete process is implemented to disconnect and isolate the nets of the device.

摘要翻译： 包括去除钝化聚酰亚胺层的器件修复过程。 钝化聚酰亚胺层使用前半灰，然后是二分之一灰分除去。 该设备在后半段灰分期间旋转。 然后使用氢氧化钠（NaOH）清洁该装置，然后实施随后的轻灰步骤。 在去除钝化聚酰亚胺层之后，将晶种层沉积在器件上。 在种子层上形成光致抗蚀剂，并且在光致抗蚀剂中形成结合位点。 修复冶金通过焊接点进行电镀。 通过将设备耦合到固定装置并将电镀电镀施加到固定装置上来对接合部位进行电镀。 设备和夹具之间的接触是通过底部表面冶金制成的。 电镀后，去除残留的种子层，实施激光删除处理，以断开和隔离设备的网络。

公开(公告)号：US06248599B1

公开(公告)日：2001-06-19

申请号：US09452935

申请日：1999-12-02

申请人： Roy Yu ,  Kamalesh S. Desai ,  Peter A. Franklin ,  Suryanarayana Kaja ,  Kimberley A. Kelly ,  Yeeling L. Lee ,  Arthur G. Merryman ,  Frank R. Morelli ,  Thomas A. Wassick

发明人： Roy Yu ,  Kamalesh S. Desai ,  Peter A. Franklin ,  Suryanarayana Kaja ,  Kimberley A. Kelly ,  Yeeling L. Lee ,  Arthur G. Merryman ,  Frank R. Morelli ,  Thomas A. Wassick

IPC分类号： H01L2100

CPC分类号： H01L21/485

摘要： A device repair process that includes removing a passivation polyimide layer. The passivation polyimide layer is removed using a first-half ash followed by a second-half ash. The device is then cleaned using sodium hydroxide (NaOH) and a subsequent light ash step is implemented. After the passivation polyimide layer is removed, a seed layer is deposited on the device. A photoresist is formed on the seed layer and bond sites are formed in the photoresist. Repair metallurgy is plated through the bond sites. The bond sites are plated by coupling the device to a fixture and applying the current for plating to the fixture. The contact between the device and the fixture is made though bottom surface metallurgy. After plating, the residual seed layer is removed and a laser delete process is implemented to disconnect and isolate the nets of the device.

摘要翻译： 包括去除钝化聚酰亚胺层的器件修复过程。 钝化聚酰亚胺层使用前半灰，然后是二分之一灰分除去。 然后使用氢氧化钠（NaOH）清洁该装置，然后实施随后的轻灰步骤。 在去除钝化聚酰亚胺层之后，将晶种层沉积在器件上。 在种子层上形成光致抗蚀剂，并且在光致抗蚀剂中形成结合位点。 修复冶金通过焊接点进行电镀。 通过将设备耦合到固定装置并将电镀电镀施加到固定装置上来对接合部位进行电镀。 设备和夹具之间的接触是通过底部表面冶金制成的。 电镀后，去除残留的种子层，实施激光删除处理，以断开和隔离设备的网络。

公开(公告)号：US6048741A

公开(公告)日：2000-04-11

申请号：US962199

申请日：1997-10-31

申请人： Roy Yu ,  Kamalesh S. Desai ,  Peter A. Franklin ,  Suryanarayana Kaja ,  Kimberley A. Kelly ,  Yeeling L. Lee ,  Arthur G. Merryman ,  Frank R. Morelli ,  Thomas A. Wassick

发明人： Roy Yu ,  Kamalesh S. Desai ,  Peter A. Franklin ,  Suryanarayana Kaja ,  Kimberley A. Kelly ,  Yeeling L. Lee ,  Arthur G. Merryman ,  Frank R. Morelli ,  Thomas A. Wassick

IPC分类号： H01L21/48 ,  H05K3/22 ,  H01L21/00 ,  H01L21/44

CPC分类号： H01L21/485 ,  H05K3/225 ,  Y10S438/906 ,  Y10S438/94

摘要： A device repair process that includes removing a passivation polyimide layer. The passivation polyimide layer is removed using a first-half ash followed by a second-half ash. The device is rotated during the second-half ash. The device is then cleaned using sodium hydroxide (NaOH) and a subsequent light ash step is implemented. After the passivation polyimide layer is removed, a seed layer is deposited on the device. A photoresist is formed on the seed layer and bond sites are formed in the photoresist. Repair metallurgy is plated through the bond sites. The bond sites are plated by coupling the device to a fixture and applying the current for plating to the fixture. The contact between the device and the fixture is made though bottom surface metallurgy. After plating, the residual seed layer is removed and a laser delete process is implemented to disconnect and isolate the nets of the device.

摘要翻译： 包括去除钝化聚酰亚胺层的器件修复过程。 钝化聚酰亚胺层使用前半灰，然后是二分之一灰分除去。 该设备在后半段灰分期间旋转。 然后使用氢氧化钠（NaOH）清洁该装置，然后实施随后的轻灰步骤。 在去除钝化聚酰亚胺层之后，将晶种层沉积在器件上。 在种子层上形成光致抗蚀剂，并且在光致抗蚀剂中形成结合位点。 修复冶金通过焊接点进行电镀。 通过将设备耦合到固定装置并将电镀电镀施加到固定装置上来对接合部位进行电镀。 设备和夹具之间的接触是通过底部表面冶金制成的。 电镀后，去除残留的种子层，实施激光删除处理，以断开和隔离设备的网络。