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    Process of top-surface-metallurgy plate-up bonding and rewiring for multilayer devices
    1.
    发明授权
    Process of top-surface-metallurgy plate-up bonding and rewiring for multilayer devices 失效
    多层器件顶表面冶金平板焊接和再布线工艺

    公开(公告)号：US06455331B2

    公开(公告)日：2002-09-24

    申请号：US09867364

    申请日：2001-05-29

    申请人： Roy Yu ,  Kamalesh S. Desai ,  Peter A. Franklin ,  Suryanarayana Kaja ,  Kimberley A. Kelly ,  Yeeling L. Lee ,  Arthur G. Merryman ,  Frank R. Morelli ,  Thomas A. Wassick

    发明人： Roy Yu ,  Kamalesh S. Desai ,  Peter A. Franklin ,  Suryanarayana Kaja ,  Kimberley A. Kelly ,  Yeeling L. Lee ,  Arthur G. Merryman ,  Frank R. Morelli ,  Thomas A. Wassick

    IPC分类号： H01L2100

    CPC分类号： H01L21/485 ,  H05K3/225

    摘要： A device repair process that includes removing a passivation polyimide layer. The passivation polyimide layer is removed using a first-half ash followed by a second-half ash. The device is rotated during the second-half ash. The device is then cleaned using sodium hydroxide (NaOH) and a subsequent light ash step is implemented. After the passivation polyimide layer is removed, a seed layer is deposited on the device. A photoresist is formed on the seed layer and bond sites are formed in the photoresist. Repair metallurgy is plated through the bond sites. The bond sites are plated by coupling the device to a fixture and applying the current for plating to the fixture. The contact between the device and the fixture is made though bottom surface metallurgy. After plating, the residual seed layer is removed and a laser delete process is implemented to disconnect and isolate the nets of the device.

    摘要翻译： 包括去除钝化聚酰亚胺层的器件修复过程。 钝化聚酰亚胺层使用前半灰，然后是二分之一灰分除去。 该设备在后半段灰分期间旋转。 然后使用氢氧化钠（NaOH）清洁该装置，然后实施随后的轻灰步骤。 在去除钝化聚酰亚胺层之后，将晶种层沉积在器件上。 在种子层上形成光致抗蚀剂，并且在光致抗蚀剂中形成结合位点。 修复冶金通过焊接点进行电镀。 通过将设备耦合到固定装置并将电镀电镀施加到固定装置上来对接合部位进行电镀。 设备和夹具之间的接触是通过底部表面冶金制成的。 电镀后，去除残留的种子层，实施激光删除处理，以断开和隔离设备的网络。

    Top-surface-metallurgy plate-up bonding and rewiring for multilayer devices
    2.
    发明授权
    Top-surface-metallurgy plate-up bonding and rewiring for multilayer devices 失效
    多层器件的顶表面冶金平板接合和重新布线

    公开(公告)号：US06248599B1

    公开(公告)日：2001-06-19

    申请号：US09452935

    申请日：1999-12-02

    申请人： Roy Yu ,  Kamalesh S. Desai ,  Peter A. Franklin ,  Suryanarayana Kaja ,  Kimberley A. Kelly ,  Yeeling L. Lee ,  Arthur G. Merryman ,  Frank R. Morelli ,  Thomas A. Wassick

    发明人： Roy Yu ,  Kamalesh S. Desai ,  Peter A. Franklin ,  Suryanarayana Kaja ,  Kimberley A. Kelly ,  Yeeling L. Lee ,  Arthur G. Merryman ,  Frank R. Morelli ,  Thomas A. Wassick

    IPC分类号： H01L2100

    CPC分类号： H01L21/485

    摘要： A device repair process that includes removing a passivation polyimide layer. The passivation polyimide layer is removed using a first-half ash followed by a second-half ash. The device is then cleaned using sodium hydroxide (NaOH) and a subsequent light ash step is implemented. After the passivation polyimide layer is removed, a seed layer is deposited on the device. A photoresist is formed on the seed layer and bond sites are formed in the photoresist. Repair metallurgy is plated through the bond sites. The bond sites are plated by coupling the device to a fixture and applying the current for plating to the fixture. The contact between the device and the fixture is made though bottom surface metallurgy. After plating, the residual seed layer is removed and a laser delete process is implemented to disconnect and isolate the nets of the device.

    摘要翻译： 包括去除钝化聚酰亚胺层的器件修复过程。 钝化聚酰亚胺层使用前半灰，然后是二分之一灰分除去。 然后使用氢氧化钠（NaOH）清洁该装置，然后实施随后的轻灰步骤。 在去除钝化聚酰亚胺层之后，将晶种层沉积在器件上。 在种子层上形成光致抗蚀剂，并且在光致抗蚀剂中形成结合位点。 修复冶金通过焊接点进行电镀。 通过将设备耦合到固定装置并将电镀电镀施加到固定装置上来对接合部位进行电镀。 设备和夹具之间的接触是通过底部表面冶金制成的。 电镀后，去除残留的种子层，实施激光删除处理，以断开和隔离设备的网络。

    Top-surface-metallurgy plate-up bonding and rewiring for multilayer devices
    3.
    发明授权
    Top-surface-metallurgy plate-up bonding and rewiring for multilayer devices 失效
    多层器件的顶表面冶金平板接合和重新布线

    公开(公告)号：US6048741A

    公开(公告)日：2000-04-11

    申请号：US962199

    申请日：1997-10-31

    申请人： Roy Yu ,  Kamalesh S. Desai ,  Peter A. Franklin ,  Suryanarayana Kaja ,  Kimberley A. Kelly ,  Yeeling L. Lee ,  Arthur G. Merryman ,  Frank R. Morelli ,  Thomas A. Wassick

    发明人： Roy Yu ,  Kamalesh S. Desai ,  Peter A. Franklin ,  Suryanarayana Kaja ,  Kimberley A. Kelly ,  Yeeling L. Lee ,  Arthur G. Merryman ,  Frank R. Morelli ,  Thomas A. Wassick

    IPC分类号： H01L21/48 ,  H05K3/22 ,  H01L21/00 ,  H01L21/44

    CPC分类号： H01L21/485 ,  H05K3/225 ,  Y10S438/906 ,  Y10S438/94

    摘要： A device repair process that includes removing a passivation polyimide layer. The passivation polyimide layer is removed using a first-half ash followed by a second-half ash. The device is rotated during the second-half ash. The device is then cleaned using sodium hydroxide (NaOH) and a subsequent light ash step is implemented. After the passivation polyimide layer is removed, a seed layer is deposited on the device. A photoresist is formed on the seed layer and bond sites are formed in the photoresist. Repair metallurgy is plated through the bond sites. The bond sites are plated by coupling the device to a fixture and applying the current for plating to the fixture. The contact between the device and the fixture is made though bottom surface metallurgy. After plating, the residual seed layer is removed and a laser delete process is implemented to disconnect and isolate the nets of the device.

    摘要翻译： 包括去除钝化聚酰亚胺层的器件修复过程。 钝化聚酰亚胺层使用前半灰，然后是二分之一灰分除去。 该设备在后半段灰分期间旋转。 然后使用氢氧化钠（NaOH）清洁该装置，然后实施随后的轻灰步骤。 在去除钝化聚酰亚胺层之后，将晶种层沉积在器件上。 在种子层上形成光致抗蚀剂，并且在光致抗蚀剂中形成结合位点。 修复冶金通过焊接点进行电镀。 通过将设备耦合到固定装置并将电镀电镀施加到固定装置上来对接合部位进行电镀。 设备和夹具之间的接触是通过底部表面冶金制成的。 电镀后，去除残留的种子层，实施激光删除处理，以断开和隔离设备的网络。

    Inherently robust repair process for thin film circuitry using uv laser
    5.
    发明授权
    Inherently robust repair process for thin film circuitry using uv laser 失效
    使用uv激光器的薄膜电路的固有鲁棒的修复过程

    公开(公告)号：US06541709B1

    公开(公告)日：2003-04-01

    申请号：US08743405

    申请日：1996-11-01

    申请人： Peter A. Franklin ,  Arthur G. Merryman ,  Rajesh S. Patel ,  Thomas A. Wassick

    发明人： Peter A. Franklin ,  Arthur G. Merryman ,  Rajesh S. Patel ,  Thomas A. Wassick

    IPC分类号： H05K103

    CPC分类号： H01L21/485 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/5382 ,  H01L2924/0002 ,  H05K3/225 ,  Y10T29/49126 ,  Y10T29/49165 ,  H01L2924/00

    摘要： A multilayer thin film structure having defined strap repair lines thereon and a method for repairing interconnections in the multilayer thin film structure (MLTF) and/or making engineering changes (EC) are provided. The method determines interconnection defects in the MLTF at a thin film layer adjacent the top metal layer of the structure, defines the top surface metallization including a series of orthogonal X conductor lines and Y conductor lines using photoresist and lithography and additive or subtractive metallization techniques and then uses a phototool to selectively expose the photoresist to define top surface strap connections needed to repair the interconnections and/or make EC's, and forms the top surface metallization.

    摘要翻译： 提供了具有限定的带修复线的多层薄膜结构和用于修复多层薄膜结构（MLTF）中的互连和/或进行工程变化（EC）的方法。 该方法确定在与结构顶层金属层相邻的薄膜层处的MLTF中的互连缺陷，限定顶表面金属化，其包括使用光致抗蚀剂和光刻以及添加或减色金属化技术的一系列正交X导体线和Y导线， 然后使用光学工具选择性地暴露光致抗蚀剂以限定修复互连和/或制造EC所需的顶表面带连接并形成顶表面金属化。

    Inherently robust repair process for thin film circuitry using UV laser
    6.
    发明授权
    Inherently robust repair process for thin film circuitry using UV laser 失效
    使用紫外激光的薄膜电路固有的强大修复过程

    公开(公告)号：US06427324B1

    公开(公告)日：2002-08-06

    申请号：US09114790

    申请日：1998-07-13

    申请人： Peter A. Franklin ,  Arthur G. Merryman ,  Rajesh S. Patel ,  Thomas A. Wassick

    发明人： Peter A. Franklin ,  Arthur G. Merryman ,  Rajesh S. Patel ,  Thomas A. Wassick

    IPC分类号： H01K310

    CPC分类号： H01L21/485 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/5382 ,  H01L2924/0002 ,  H05K3/225 ,  Y10T29/49126 ,  Y10T29/49165 ,  H01L2924/00

    摘要： A multilayer thin film structure having defined strap repair lines thereon and a method for repairing interconnections in the multilayer thin film structure (MLTF) and/or making engineering changes (EC) are provided. The method comprises determining interconnection defects in the MLTF at a thin film layer adjacent the top metal layer of the structure, defining the top surface metallization including a series of orthogonal X conductor lines and Y conductor lines using photoresist and lithography and additive or phototool to selectively expose the photoresist to define top surface strap connections needed to repair the interconnections and/or make EC's, and forming the top surface metallization.

    摘要翻译： 提供了具有限定的带修复线的多层薄膜结构和用于修复多层薄膜结构（MLTF）中的互连和/或进行工程变化（EC）的方法。 该方法包括确定MLTF中邻近该结构顶层金属层的薄膜层上的互连缺陷，限定包括一系列正交X导体线的顶表面金属化和使用光刻胶和光刻术和添加剂或光学工具的Y导体线选择性地 暴露光致抗蚀剂以限定修复互连和/或制造EC并且形成顶表面金属化所需的顶表面带连接。

    Seed metal delete process for thin film repair solutions using direct UV laser
    7.
    发明授权
    Seed metal delete process for thin film repair solutions using direct UV laser 失效
    种子金属删除工艺用于使用直接UV激光的薄膜修复解决方案

    公开(公告)号：US06235544B1

    公开(公告)日：2001-05-22

    申请号：US09295131

    申请日：1999-04-20

    申请人： Peter A. Franklin ,  Charles J. Hendricks ,  Richard P. Surprenant ,  Stephen J. Tirch, III ,  Thomas A. Wassick ,  James P. Wood

    发明人： Peter A. Franklin ,  Charles J. Hendricks ,  Richard P. Surprenant ,  Stephen J. Tirch, III ,  Thomas A. Wassick ,  James P. Wood

    IPC分类号： G01R3126

    CPC分类号： H01L21/485

    摘要： A multilayer thin film structure (MLTF) is provided having no extraneous via-pad connection strap plated metallurgy for defective vias needing removal. The method for making or repairing the MLTF comprises determining interconnection defects in the MLTF at a thin film layer adjacent to the top metal layer of the structure, applying a top surface dielectric layer and forming vias in the layer, applying a metal conducting layer and removing the metal conducting layer for via-pad connection straps of defective vias and at the intersection of XY lines used in the repair, defining the top surface metallization including a series of orthogonal X conductor repair lines and Y conductor repair lines using a photoresist and lithography and then using a phototool to selectively expose the photoresist to define top surface strap connections needed to repair the interconnections and/or make EC's, and forming the top surface metallization using additive or subtractive metallization techniques.

    摘要翻译： 提供了一种多层薄膜结构（MLTF），其中没有外部通孔焊盘连接带电镀冶金用于需要去除的缺陷通孔。 用于制造或修复MLTF的方法包括：在与该结构的顶部金属层相邻的薄膜层处确定MLTF中的互连缺陷，施加顶表面介电层并在该层中形成通孔，施加金属导电层并除去 用于通孔焊盘连接带的金属导电层和用于修复的XY线的相交处，限定包括一系列正交X导体修复线的顶表面金属化和使用光致抗蚀剂和光刻的Y导体修复线， 然后使用光学工具选择性地暴露光致抗蚀剂以限定修复互连和/或制造EC所需的顶表面带连接，以及使用添加或减色金属化技术形成顶表面金属化。