公开(公告)号：US20080271989A1

公开(公告)日：2008-11-06

申请号：US12108296

申请日：2008-04-23

申请人： Fumito Shoji ,  Yoshio Kasai ,  Kazuhiro Murakami

发明人： Fumito Shoji ,  Yoshio Kasai ,  Kazuhiro Murakami

IPC分类号： C23C14/00

CPC分类号： C25D21/18 ,  C25D17/00 ,  C25D21/12

摘要： An apparatus for plating includes a plating bath for plating copper (Cu) film on the surface of a substrate under a prescribed plating condition using a plating solution, a chemical supplying unit for supplying each components constituting the plating solution into the plating bath, a plating solution analyzing unit for analyzing a concentration of a predetermined component contained in the plating solution, a plating controlling unit for storing correlation data between a parameter representing a state of the plating solution and the plating condition, extracting the parameter relating the plating solution, and determining the predetermined plating condition based on the parameter and the stored correlation data.

摘要翻译： 一种电镀装置，其特征在于，使用电镀液，在规定的电镀条件下，在基板表面上镀铜（Cu）膜的电镀液，将构成电镀液的各成分供给电镀槽的化学供给单元， 溶液分析单元，用于分析包含在电镀溶液中的预定组分的浓度;电镀控制单元，用于存储表示电镀液的状态的参数与电镀条件之间的相关数据，提取与电镀液相关的参数，以及确定 基于参数和存储的相关数据的预定电镀条件。

公开(公告)号：US20120217497A1

公开(公告)日：2012-08-30

申请号：US13351280

申请日：2012-01-17

申请人： Fumito Shoji ,  Noriteru Yamada

发明人： Fumito Shoji ,  Noriteru Yamada

IPC分类号： H01L23/58 ,  B05C11/00 ,  H01L21/66

CPC分类号： H01L22/34 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： According to one embodiment, a manufacturing method for a semiconductor device includes: forming a test pattern with a metal film embedded therein through a plating process; detecting a characteristic of the test pattern; and adjusting a condition for the plating process based on the detected characteristic of the test pattern. The test pattern is formed over three or more wiring layers and includes a stacked via in an intermediate layer.

摘要翻译： 根据一个实施例，一种用于半导体器件的制造方法包括：通过电镀工艺在其中嵌入金属膜形成测试图案; 检测测试图案的特性; 并且根据检测到的测试图案的特性来调整电镀处理的条件。 测试图案形成在三个或更多个布线层上，并且包括在中间层中的堆叠的通孔。

公开(公告)号：US20120067732A1

公开(公告)日：2012-03-22

申请号：US13042598

申请日：2011-03-08

申请人： Fumito Shoji ,  Hiroshi Ota

发明人： Fumito Shoji ,  Hiroshi Ota

IPC分类号： C25D21/12 ,  C25D5/04 ,  C25D17/12

CPC分类号： C25D21/12 ,  C25D5/04 ,  C25D17/12

摘要： A plating apparatus includes a plating bath configured to perform plating processing of a substrate with a plating solution including an inorganic constituent and an organic constituent introduced into the plating bath, a chemical supplying unit configured to supply each chemical of the inorganic constituent and the organic constituent, an electrode configured to dispose in the plating solution and the electrode configured to selectively adsorb a by-product produced from the organic constituent, and an electric current applying unit configured to apply a predetermined electric current to the electrode.

摘要翻译： 一种电镀装置，具备：电镀槽，其配置为对包含无机成分和导入镀液的有机成分的电镀液进行基板的电镀处理;化学供给部，其对无机成分和所述有机成分 配置成配置在电镀液中的电极和被配置为选择性吸附由有机成分产生的副产物的电极;以及电流施加单元，被配置为向电极施加预定电流。