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公开(公告)号：US4444858A
公开(公告)日：1984-04-24
申请号：US201036
申请日：1980-10-27
CPC分类号： G03G13/283
摘要： A method of preparing a lithographic printing plate in which a toner image formed by electrophotographic process is transferred and fixed on a metal base lithographic printing plate having a thin insulating synthetic resin surface layer. Thereafter the synthetic resin layer on the non-image area is removed followed by removal of the toner to leave resin image areas.
摘要翻译： 一种制备平版印刷版的方法，其中将通过电子照相方法形成的调色剂图像转印并固定在具有薄的绝缘合成树脂表面层的金属基底版印刷版上。 此后，去除非图像区域上的合成树脂层，随后除去调色剂以留下树脂图像区域。
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公开(公告)号：US4121936A
公开(公告)日：1978-10-24
申请号：US805907
申请日：1977-06-13
CPC分类号： G03F7/039
摘要： A film of poly(methacrylamide) is heated to partially form imide bonds with elimination of ammonia, and such imide bonding causes crosslinking in the polymer to form a crosslinked polymer film. This film can be advantageously adapted as a positive resist capable of forming a positive image by exposure to radiation such as electron beams. The minimum incident charge required for such exposure is of the order of 10.sup.-7 coulomb/cm.sup.2, which is far lower than the level required in the use of conventional resists. The resist provided according to this invention is also capable of forming an excellent heat-resistant positive resist image by short-time exposure to radiation.
摘要翻译： 加热聚甲基丙烯酰胺的膜，以消除氨而部分地形成酰亚胺键，并且这种酰亚胺键合导致聚合物中的交联以形成交联的聚合物膜。 该膜可以有利地适用于能够通过暴露于诸如电子束的辐射形成正像的正光刻胶。 这种曝光所需的最小事件电荷约为10-7库伦/ cm2，远远低于使用常规抗蚀剂所需的水平。 根据本发明提供的抗蚀剂还能够通过短时间暴露于辐射形成优异的耐热正性抗蚀剂图像。
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公开(公告)号：US4279984A
公开(公告)日：1981-07-21
申请号：US974003
申请日：1978-12-28
CPC分类号： G03F7/039
摘要： A resist material used for forming a positive image by application of radiation, said material comprising as principal constituent poly(ethyl .alpha.-cyanoacrylate), poly(ethyl .alpha.-amidoacrylate) or a binary copolymer thereof or a ternary copolymer of poly(ethyl .alpha.-cyanoacrylate), poly(ethyl .alpha.-amidoacrylate) and polymethacrylonitrile. The minimum incident charge of radiation required for forming a desired resist pattern by use of this resist material is as low as 10.sup.-7 coulomb/cm.sup.2, or far lower than the level required in use of other known resist materials, and a positive resist image which can well stand the chromium etching solutions is obtained by short-time irradiation.
摘要翻译： 用于通过施加辐射形成正像的抗蚀剂材料，所述材料包含作为主要成分的聚（α-氰基丙烯酸乙酯），聚（乙基丙烯酸酰胺丙烯酸酯）或其二元共聚物或聚（乙基α - 氰基丙烯酸酯），聚（丙烯酸乙酯 - 丙烯酸乙酯）和聚甲基丙烯腈。 通过使用该抗蚀剂材料形成期望的抗蚀剂图案所需的辐射的最小入射电荷低至10-7库仑/ cm 2，或远低于使用其它已知抗蚀剂材料所需的水平和正抗蚀剂图像 通过短时间照射可获得铬蚀刻溶液。
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