公开(公告)号：US20060006554A1

公开(公告)日：2006-01-12

申请号：US11165110

申请日：2005-06-22

申请人： Myung Yoo ,  Dong Kim ,  Geun Yeom

发明人： Myung Yoo ,  Dong Kim ,  Geun Yeom

IPC分类号： H01L29/739

CPC分类号： H01L33/0079 ,  H01L33/20 ,  H01L33/405 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： The invention provides a reliable technique to fabricate a new vertical structure compound semiconductor devices with highly improved light output. An exemplary embodiment of a method of fabricating light emitting semiconductor devices comprising the steps of forming a light emitting layer, and forming an undulated surface over light emitting layer to improve light output. In one embodiment, the method further comprises the step of forming a lens over the undulated surface of each of the semiconductor devices. In one embodiment, the method of claim further comprises the steps of forming a contact pad over the semiconductor structure to contact with the light emitting layer, and packaging each of the semiconductor devices in a package including an upper lead frame and lower lead frame. Advantages of the invention include an improved technique for fabricating semiconductor devices with great yield, reliability and light output.

摘要翻译： 本发明提供了一种制造具有高度改进的光输出的新的垂直结构化合物半导体器件的可靠技术。 一种制造发光半导体器件的方法的示例性实施例，包括以下步骤：形成发光层，并在发光层上形成凹凸表面以改善光输出。 在一个实施例中，该方法还包括在每个半导体器件的波状表面上形成透镜的步骤。 在一个实施例中，权利要求的方法进一步包括以下步骤：在半导体结构上形成与发光层接触的接触焊盘，以及将每个半导体器件封装在包括上引线框和下引线框的封装中。 本发明的优点包括用于制造具有高产率，可靠性和光输出的半导体器件的改进技术。