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公开(公告)号：US20050036791A1
公开(公告)日：2005-02-17
申请号：US10917927
申请日：2004-08-13
申请人： Lawrence Gunn , Roger Koumans , Bing Li , Guo Liang Li , Thierry Pinguet
发明人： Lawrence Gunn , Roger Koumans , Bing Li , Guo Liang Li , Thierry Pinguet
CPC分类号： H01S5/0265 , G02B2006/12142 , G02B2006/12159 , G02F1/0121 , G02F1/025 , G02F1/2255 , G02F1/2257 , G02F2201/127 , G02F2201/16 , G02F2201/20 , H01S5/5027 , H04B10/5051 , H04B10/5053
摘要： High speed optical modulators can be made of k modulators connected in series disposed on one of a variety of semiconductor substrates. An electrical signal propagating in a microwave transmission line is tapped off of the transmission line at regular intervals and is amplified by k distributed amplifiers. Each of the outputs of the k distributed amplifiers is connected to a respective one of the k modulators. Distributed amplifier modulators can have much higher modulating speeds than a comparable lumped element modulator, due to the lower capacitance of each of the k modulators. Distributed amplifier modulators can have much higher modulating speeds than a comparable traveling wave modulator, due to the impedance matching provided by the distributed amplifiers.
摘要翻译： 高速光学调制器可以由串联设置在各种半导体衬底之一上的k个调制器组成。 在微波传输线中传播的电信号以规则的间隔从传输线路中分离出来，并由k个分布式放大器放大。 k个分布式放大器的每个输出连接到k个调制器中的相应一个。 分布式放大器调制器可以具有比可比较的集总元件调制器高得多的调制速度，这是由于每个k个调制器的电容较小。 由于分布式放大器提供的阻抗匹配，分布式放大器调制器可以具有比类似的行波调制器更高的调制速度。
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公开(公告)号：US07251408B1
公开(公告)日：2007-07-31
申请号：US11400163
申请日：2006-04-05
CPC分类号： G02F1/025 , G02F2202/06 , G02F2202/105
摘要： High speed optical modulators can be made of a lateral PN diode formed in a silicon optical rib waveguide, disposed on a SOI or other silicon based substrate. A PN junction is formed at the boundary of the P and N doped regions. The depletion region at the PN junction overlaps with the center of a guided optical mode propagating through the waveguide. Electrically modulating a lateral PN diode causes a phase shift in an optical wave propagating through the waveguide. Each of the doped regions can have a stepped or gradient doping profile within it or several doped sections with different doping concentrations. Forming the doped regions of a PN diode modulator with stepped or gradient doping profiles can optimize the trade off between the series resistance of the PN diode and the optical loss in the center of the waveguide due to the presence of dopants.
摘要翻译： 高速光学调制器可以由形成在硅光波导中的横向PN二极管制成，设置在SOI或其它硅基衬底上。 在P和N掺杂区域的边界处形成PN结。 PN结的耗尽区与通过波导传播的引导光模的中心重叠。 横向PN二极管的电学调制引起在波导中传播的光波的相移。 每个掺杂区域可以在其内具有阶梯式或梯度掺杂分布，或者具有不同掺杂浓度的多个掺杂区。 形成具有阶梯式或梯度掺杂分布的PN二极管调制器的掺杂区域可以优化PN二极管的串联电阻与由于掺杂剂的存在引起的波导中心的光损耗之间的折衷。
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公开(公告)号：US07136544B1
公开(公告)日：2006-11-14
申请号：US10916839
申请日：2004-08-11
CPC分类号： G02F1/025 , G02B6/12004 , G02B6/122
摘要： High speed optical modulators can be made of a lateral PN diode formed in a strip loaded optical waveguide on a SOI or other silicon based substrate. A PN junction is formed at the boundary of the P and N doped regions. The depletion region at the PN junction overlaps with the center of a guided optical mode propagating through the waveguide. Electrically modulating a lateral PN diode causes a phase shift in an optical wave propagating through the waveguide. Due to differences in fabrication methods, forming strip loaded waveguides with consistent properties for use in PN diode optical modulators is much easier than fabricating similar rib waveguides.
摘要翻译： 高速光学调制器可以由在SOI或其它基于硅的衬底上的条带加载光波导中形成的横向PN二极管制成。 在P和N掺杂区域的边界处形成PN结。 PN结的耗尽区与通过波导传播的引导光模的中心重叠。 横向PN二极管的电学调制引起在波导中传播的光波的相移。 由于制造方法的差异，用于PN二极管光学调制器的形成具有一致性质的条带负载波导比制造类似的肋波导更容易。
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公开(公告)号：US07116853B2
公开(公告)日：2006-10-03
申请号：US10917204
申请日：2004-08-11
IPC分类号： G02B6/12
CPC分类号： G02F1/025 , G02B2006/12097 , G02B2006/12142 , G02F1/2257 , G02F2201/063
摘要： High speed optical modulators can be made of a reverse biased lateral PN diode formed in a silicon rib optical waveguide disposed on a SOI or other silicon based substrate. A PN junction is formed at the boundary of the P and N doped regions. The depletion region at the PN junction overlaps with the center of a guided optical mode propagating through the waveguide. Electrically modulating a reverse biased lateral PN diode causes a phase shift in an optical wave propagating through the waveguide. Prior art forward biased PN and PIN diode modulators have been relatively low speed devices.
摘要翻译： 高速光调制器可以由设置在SOI或其它硅基衬底上的硅肋光波导中形成的反向偏置横向PN二极管制成。 在P和N掺杂区域的边界处形成PN结。 PN结的耗尽区与通过波导传播的引导光模的中心重叠。 电调制反向偏置横向PN二极管导致在波导中传播的光波的相移。 现有技术正向偏置PN和PIN二极管调制器已经是相对低速的器件。
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公开(公告)号：US07039258B2
公开(公告)日：2006-05-02
申请号：US10917927
申请日：2004-08-13
IPC分类号： G02F1/025
CPC分类号： H01S5/0265 , G02B2006/12142 , G02B2006/12159 , G02F1/0121 , G02F1/025 , G02F1/2255 , G02F1/2257 , G02F2201/127 , G02F2201/16 , G02F2201/20 , H01S5/5027 , H04B10/5051 , H04B10/5053
摘要： High speed optical modulators can be made of k modulators connected in series disposed on one of a variety of semiconductor substrates. An electrical signal propagating in a microwave transmission line is tapped off of the transmission line at regular intervals and is amplified by k distributed amplifiers. Each of the outputs of the k distributed amplifiers is connected to a respective one of the k modulators. Distributed amplifier modulators can have much higher modulating speeds than a comparable lumped element modulator, due to the lower capacitance of each of the k modulators. Distributed amplifier modulators can have much higher modulating speeds than a comparable traveling wave modulator, due to the impedance matching provided by the distributed amplifiers.
摘要翻译： 高速光学调制器可以由串联设置在各种半导体衬底之一上的k个调制器组成。 在微波传输线中传播的电信号以规则的间隔从传输线路中分离出来，并由k个分布式放大器放大。 k个分布式放大器的每个输出连接到k个调制器中的相应一个。 分布式放大器调制器可以具有比可比较的集总元件调制器高得多的调制速度，这是由于每个k个调制器的电容较小。 由于分布式放大器提供的阻抗匹配，分布式放大器调制器可以具有比类似的行波调制器更高的调制速度。
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公开(公告)号：US07085443B1
公开(公告)日：2006-08-01
申请号：US10916857
申请日：2004-08-11
CPC分类号： G02F1/025 , G02F2202/06 , G02F2202/105
摘要： High speed optical modulators can be made of a lateral PN diode formed in a silicon optical waveguide, disposed on a SOI or other silicon based substrate. A PN junction is formed at the boundary of the P and N doped regions. The depletion region at the PN junction overlaps with the center of a guided optical mode propagating through the waveguide. Electrically modulating a lateral PN diode causes a phase shift in an optical wave propagating through the waveguide. Each of the doped regions can have a stepped or gradient doping profile within it or several doped sections with different doping concentrations. Forming the doped regions of a PN diode modulator with stepped or gradient doping profiles can optimize the trade off between the series resistance of the PN diode and the optical loss in the center of the waveguide due to the presence of dopants.
摘要翻译： 高速光学调制器可以由形成在硅光波导中的横向PN二极管制成，设置在SOI或其它硅基衬底上。 在P和N掺杂区域的边界处形成PN结。 PN结的耗尽区与通过波导传播的引导光模的中心重叠。 横向PN二极管的电学调制引起在波导中传播的光波的相移。 每个掺杂区域可以在其内具有阶梯式或梯度掺杂分布，或者具有不同掺杂浓度的多个掺杂区。 形成具有阶梯式或梯度掺杂分布的PN二极管调制器的掺杂区域可以优化PN二极管的串联电阻与由于掺杂剂的存在引起的波导中心的光损耗之间的折衷。
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