BAW resonator bi-layer top electrode with zero etch undercut
    1.
    发明授权
    BAW resonator bi-layer top electrode with zero etch undercut 有权
    BAW谐振器双层顶电极,零蚀刻底切

    公开(公告)号:US07737612B1

    公开(公告)日:2010-06-15

    申请号:US12080348

    申请日:2008-04-01

    IPC分类号: H01L41/08 H01L41/047

    摘要: A piezoelectric resonator includes a multi-layer top electrode configured such that a top most layer protects the underlying layers from subsequent etching, thereby preventing etch undercut of the top-most layer. In one embodiment, the multi-layer top electrode is configured as a bi-layer, so that the upper layer of the bi-layer stack protects all sides of the underlying layer from subsequent etch process steps. In an alternative embodiment, at least the perimeter of a multi-layer top electrode is completely covered with overlapping interconnect metal.

    摘要翻译: 压电谐振器包括多层顶电极,其被配置为使得最顶层保护下面的层不受后续蚀刻,从而防止最顶层的蚀刻底切。 在一个实施例中,多层顶电极被配置为双层,使得双层堆叠的上层保护下层的所有侧面不受后续蚀刻工艺步骤的影响。 在替代实施例中,至少多层顶部电极的周边完全被重叠的互连金属覆盖。

    Process of making a BAW resonator bi-layer top electrode
    2.
    发明授权
    Process of making a BAW resonator bi-layer top electrode 有权
    制造BAW谐振器双层顶电极的工艺

    公开(公告)号:US08201311B1

    公开(公告)日:2012-06-19

    申请号:US12221907

    申请日:2008-08-06

    IPC分类号: H04R17/10 H04R31/00

    摘要: A piezoelectric layer is coupled to a bottom electrode in a method of fabricating a piezoelectric resonator. A bottom metal layer of a top electrode is deposited on the piezoelectric layer. The bottom metal layer is patterned and etched. A top metal layer of the top electrode is deposited on the etched bottom metal layer. The top metal layer is patterned and etched. An interconnect metal layer is deposited on the etched top metal layer and the piezoelectric layer such that the interconnect metal layer isolates the bottom metal layer from subsequent etch steps.

    摘要翻译: 在制造压电谐振器的方法中,压电层耦合到底电极。 顶部电极的底部金属层沉积在压电层上。 底部金属层被图案化和蚀刻。 顶部电极的顶部金属层沉积在蚀刻的底部金属层上。 顶层金属层被图案化和蚀刻。 互连金属层沉积在蚀刻的顶部金属层和压电层上,使得互连金属层将底部金属层与随后的蚀刻步骤隔离。

    BAW resonator bi-layer top electrode with zero etch undercut
    3.
    发明授权
    BAW resonator bi-layer top electrode with zero etch undercut 有权
    BAW谐振器双层顶电极,零蚀刻底切

    公开(公告)号:US07600303B1

    公开(公告)日:2009-10-13

    申请号:US11442375

    申请日:2006-05-25

    IPC分类号: H04R17/00 C23F1/00

    摘要: A method of fabricating a BAW piezoelectric resonator, the method comprising the steps of providing a bottom electrode and a piezoelectric layer coupled to the bottom electrode. A bottom metal layer is deposited on a top electrode on the piezoelectric layer. The bottom metal layer is patterned and etched. A top metal layer of the top electrode is deposited on the etched bottom metal layer. The top metal layer is patterned and layered such that the top metal layer completely covers the top and sides of the bottom metal layer.

    摘要翻译: 一种制造BAW压电谐振器的方法,该方法包括以下步骤:提供耦合到底部电极的底部电极和压电层。 底部金属层沉积在压电层上的顶部电极上。 底部金属层被图案化和蚀刻。 顶部电极的顶部金属层沉积在蚀刻的底部金属层上。 顶部金属层被图案化和层叠,使得顶部金属层完全覆盖底部金属层的顶部和侧面。