公开(公告)号：US20080076238A1

公开(公告)日：2008-03-27

申请号：US11833619

申请日：2007-08-03

申请人： Isao Miyashita ,  Yuji Fujii ,  Hajime Ebara ,  Katsuo Ishizaka ,  Norio Hosoya ,  Hidekazu Okuda

发明人： Isao Miyashita ,  Yuji Fujii ,  Hajime Ebara ,  Katsuo Ishizaka ,  Norio Hosoya ,  Hidekazu Okuda

IPC分类号： H01L21/265

CPC分类号： H01L29/66348 ,  H01L23/49562 ,  H01L29/41766 ,  H01L29/42356 ,  H01L29/7397 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/00

摘要： Provided is a technology of carrying out activation annealing of n type impurity ions implanted for the formation of a field stop layer (n+ type semiconductor region) and activation annealing of p type impurity ions implanted for the formation of a collector region (p+ type semiconductor region) in separate steps to adjust an activation ratio of the n type impurity ions in the field stop layer to 60% or greater and an activation ratio of the p type impurity ions in the collector region to from 1 to 15%. This makes it possible to form an IGBT having a high breakdown voltage and high-speed switching characteristics. Moreover, use of a film stack made of nickel silicide, titanium, nickel and gold films for a collector electrode makes it possible to provide an ohmic contact with the collector region.

摘要翻译： 提供了为了形成场阻止层（n + SUP型半导体区域）而注入的n型杂质离子进行活化退火的技术，以及用于形成 集电极区域（p + SUP +型半导体区域），以将场致发射层中的n型杂质离子的活化比调节至60％以上，p型杂质的活化率 在集电极区域的离子为1〜15％。 这使得可以形成具有高击穿电压和高速开关特性的IGBT。 此外，使用由硅化镍，钛，镍和金膜构成的用于集电极电极的膜堆叠使得可以与集电极区域提供欧姆接触。

公开(公告)号：US07776660B2

公开(公告)日：2010-08-17

申请号：US11833619

申请日：2007-08-03

申请人： Isao Miyashita ,  Yuji Fujii ,  Hajime Ebara ,  Katsuo Ishizaka ,  Norio Hosoya ,  Hidekazu Okuda

发明人： Isao Miyashita ,  Yuji Fujii ,  Hajime Ebara ,  Katsuo Ishizaka ,  Norio Hosoya ,  Hidekazu Okuda

IPC分类号： H01L21/332

CPC分类号： H01L29/66348 ,  H01L23/49562 ,  H01L29/41766 ,  H01L29/42356 ,  H01L29/7397 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/00

摘要： Provided is a technology of carrying out activation annealing of n type impurity ions implanted for the formation of a field stop layer (n+ type semiconductor region) and activation annealing of p type impurity ions implanted for the formation of a collector region (p+ type semiconductor region) in separate steps to adjust an activation ratio of the n type impurity ions in the field stop layer to 60% or greater and an activation ratio of the p type impurity ions in the collector region to from 1 to 15%. This makes it possible to form an IGBT having a high breakdown voltage and high-speed switching characteristics. Moreover, use of a film stack made of nickel silicide, titanium, nickel and gold films for a collector electrode makes it possible to provide an ohmic contact with the collector region.

摘要翻译： 提供了用于形成场致发射层（n +型半导体区域）而注入的n型杂质离子的活化退火和注入用于形成集电极区域（p +型半导体区域）的p型杂质离子的活化退火的技术 ），将场致发光层中的n型杂质离子的活化比例调整为60％以上，将集电区域的p型杂质离子的活化比例调整为1〜15％。 这使得可以形成具有高击穿电压和高速开关特性的IGBT。 此外，使用由硅化镍，钛，镍和金膜构成的用于集电极电极的膜堆叠使得可以与集电极区域提供欧姆接触。