公开(公告)号：US06858077B2

公开(公告)日：2005-02-22

申请号：US10291640

申请日：2002-11-12

Applicant: Hong-Woo Lee ,  Joon-Young Choi ,  Hyon-Jong Cho ,  Hak-Do Yoo

Inventor： Hong-Woo Lee ,  Joon-Young Choi ,  Hyon-Jong Cho ,  Hak-Do Yoo

IPC: C30B29/06 ,  C30B15/00 ,  H01L21/02 ,  H01L21/208 ,  C30B30/04

CPC classification number: C30B29/06 ,  C30B15/203 ,  C30B15/206 ,  Y10T428/21

Abstract: The present invention relates to a single crystalline silicon ingot, a single crystalline wafer, and a producing method thereof in accordance with the Czochralski method which enables reduction of a large defect area while increasing a micro-vacancy defect area in an agglomerated vacancy point area, which is the area between a central axis and an oxidation-induced stacking fault ring, by providing uniform conditions of crystal ingot growth and cooling and by adjusting a pulling rate for growing an ingot to grow, thus the oxidation-induced stacking fault ring exists only at an edge of the ingot radius.

Abstract translation: 本发明涉及一种单晶硅锭，单晶晶片及其制造方法，该方法能够减少大的缺陷面积，同时增加聚集的空位点区域的微空缺缺陷面积， 这是通过提供晶锭生长和冷却的均匀条件以及通过调整生长锭生长的牵引速率来产生中心轴和氧化诱发的堆垛层错环之间的区域，因此氧化诱导堆垛层错环只存在 在晶锭半径的边缘。

公开(公告)号：US06527859B2

公开(公告)日：2003-03-04

申请号：US09920808

申请日：2001-08-03

Applicant: Hong-Woo Lee ,  Joon-Young Choi ,  Hyon-Jong Cho ,  Hak-Do Yoo

Inventor： Hong-Woo Lee ,  Joon-Young Choi ,  Hyon-Jong Cho ,  Hak-Do Yoo

IPC: C30B3500

CPC classification number: C30B15/14 ,  Y10T117/1032 ,  Y10T117/1068 ,  Y10T117/1072

Abstract: A chamber with a quartz crucible established therein for growing a single crystalline ingot with a predetermined diameter D which is to be put in the crucible. The quartz crucible is wrapped in a crucible supporter fixed to a rotational axis, with a heater surrounding the crucible support and a thermos surrounding the heater to prevent heat radiated from the heater from propagating into a wall of the chamber. A thermal shield is included which has a first cylindrical shielding part installed between the ingot and the crucible, a second flange type shielding part connected to an upper part of the first shielding part, and a third shielding part connected to a lower part of the first shielding part and protruding toward the ingot.

公开(公告)号：US06521316B2

公开(公告)日：2003-02-18

申请号：US09742215

申请日：2000-12-22

Applicant: Hong-Woo Lee ,  Joon-Young Choi ,  Hyon-Jong Cho ,  Hak-Do Yoo

Inventor： Hong-Woo Lee ,  Joon-Young Choi ,  Hyon-Jong Cho ,  Hak-Do Yoo

IPC: C30B2906

CPC classification number: C30B29/06 ,  C30B15/203 ,  C30B15/206 ,  Y10T428/21

Abstract: The present invention relates to a single crystalline silicon ingot, a single crystalline wafer, and a producing method thereof in accordance with the Czochralski method which enables reduction of a large defect area while increasing a micro-vacancy defect area in an agglomerated vacancy point area, which is the area between a central axis and an oxidation-induced stacking fault ring, by providing uniform conditions of crystal ingot growth and cooling and by adjusting a pulling rate for growing an ingot to grow, thus the oxidation-induced stacking fault ring exists only at an edge of the ingot radius.

Abstract translation: 本发明涉及一种单晶硅锭，单晶晶片及其制造方法，该方法能够减少大的缺陷面积，同时增加聚集的空位点区域的微空缺缺陷面积， 这是通过提供晶锭生长和冷却的均匀条件以及通过调整生长锭生长的牵引速率来产生中心轴和氧化诱发的堆垛层错环之间的区域，因此氧化诱导堆垛层错环只存在 在晶锭半径的边缘。