Method for the manufacture of resist structures
    2.
    发明授权
    Method for the manufacture of resist structures 失效
    抗蚀剂结构的制造方法

    公开(公告)号:US4395481A

    公开(公告)日:1983-07-26

    申请号:US305798

    申请日:1981-09-25

    CPC分类号: G03F7/039 G05F1/577

    摘要: The invention relates to a method for the manufacture of positive resist structures by means of short-wave UV rays and has the objective to develop such a method in a manner such that increased sensitivity and resolution as well as high thermal stability and, in addition, transparency in the wave-length range above 260 nm can be achieved. According to the invention, it is provided for this purpose to use as the resist material copolymers of 1 to 70 mol % alkylmethacrylate with an alkyl radical having 1 to 4 C atoms, and 99 to 30 mol % of an ethylenically unsaturated monomer with chlorine and/or cyan substituents. The method according to the invention is particularly well suited for producing resist structures about 0.5 to 2 .mu.m thick by means of UV rays in the wave-length range between about 180 to 260 nm.

    摘要翻译: 本发明涉及通过短波紫外线制造正型抗蚀剂结构的方法,其目的是以增加灵敏度和分辨率以及高热稳定性的方式开发这种方法,另外, 可以实现260nm以上的波长范围的透明度。 根据本发明,为此目的提供了使用1至70摩尔%甲基丙烯酸烷基酯与具有1-4个碳原子的烷基的抗蚀剂材料共聚物和99至30摩尔%的具有氯的烯属不饱和单体的抗蚀剂材料共聚物,以及 /或青色取代基。 根据本发明的方法特别适用于通过在约180至260nm之间的波长范围内的紫外线生产约0.5至2μm厚的抗蚀剂结构。