摘要:
The invention relates to a method for the manufacture of positive resist structures by means of short-wave UV rays and has the objective to develop such a method in a manner such that increased sensitivity and resolution as well as high thermal stability and, in addition, transparency in the wave-length range above 260 nm can be achieved. According to the invention, it is provided for this purpose to use as the resist material copolymers of 1 to 70 mol % alkylmethacrylate with an alkyl radical having 1 to 4 C atoms, and 99 to 30 mol % of an ethylenically unsaturated monomer with chlorine and/or cyan substituents. The method according to the invention is particularly well suited for producing resist structures about 0.5 to 2 .mu.m thick by means of UV rays in the wave-length range between about 180 to 260 nm.
摘要:
A dry-developable, positively acting TSI resist contains the following components: a suitable solvent, a strong acid former as the photoactive component, and a base polymer in the form of a copolymer or terpolymer with maleic acid anhydride as a basic unit and glycidyl methacrylate and/or a styrene derivative as a further basic unit, and possibly an additive.
摘要:
An electrophotographic recording material is applied on a plate-shaped or drum-shaped substrate in a layer structure of superposed layers which comprises a photoconductive layer and at least the uppermost layer is fashioned of amorphous, hydrogen-containing carbon. The amorphous, hydrogen-containing carbon layer is deposited from a radio frequency excited low-pressure plasma with gaseous hydrocarbon as a reaction gas and in which a self-bias DC voltage is superimposed on the radio frequency field. The a-c:H material obtained in this manner is semiconducting and has photoconductive properties so that it can be employed for the photoconductive layer of the electrophotographic recording material.
摘要:
Relief structures comprised of double lacquer layers on substrates already having relief structures for integrated semiconductor circuits are produced by applying a lower lacquer layer onto such substrate and which is composed of a material which does not cross-link or decompose due to radiation energy and which has only relatively slight sensitivity at the radiation energy dosage range utilized for structuring; applying an upper lacquer layer onto the lower lacquer layer and which upper layer is thinner relative to the thickness of the lower layer by a factor of at least 2 and is composed of a highly sensitive negative lacquer material; generating desired relief structures in the upper lacquer layer and removing those portions of the lower lacquer which are not covered by the upper negative lacquer layer.
摘要:
A high-voltage capacitor is used to transmit energy and has an insulator housing, wherein at least two serially connected capacitors, which are mounted in parallel, are arranged. Said capacitors are made of, respectively, a serial connection of individual capacitors which are embodied as stackable capacitor elements. The resulting high-voltage capacitor is compact and economical. Each capacitor element comprises several individual capacitors which are maintained in an isolated manner, whereby the number corresponds to the number of serially connected capacitors, such that said serially connected capacitors are formed by one stack of capacitor elements.
摘要:
The system is intended to provide an isolated power supply for an electrical load. It contains a generator for producing a supply signal, and a transmission path having two separate branch elements. The first branch element is designed for transmission of the supply signal (S1) in the forward direction, and the second branch element is designed for transmission of the supply signal in the backward direction, so that this results in a closed circuit for the supply signal. The two branch elements contain means for isolation. The load can be supplied by the supply signal with an electrical power of at most 100 mW.
摘要:
Premixed polymers which can serve as base polymers for high-resolution resists are structured from 40 to 99 mole % of a tert. butyl ester of an unsaturated carboxylic acid and 1 to 60 mole % of an anhydride of an unsaturated carboxylic acid.
摘要:
New mixed polymers which can serve as base polymers for high-resolution resists are structured from 40 to 99 mole % of a tert. butyl ester of an unsaturated carboxylic acid and 1 to 60 mole % of an anhydride of an unsaturated carboxylic acid.
摘要:
Known large vibrating conveyors are not readily suitable as such for conveying bulk materials or small articles into or out of a liquid bath, because the liquid transmits the vibrations to other structural parts, for example a vessel for the liquid, as a result of the incompressibility of the liquid. In order to remedy this, the vibrating conveyor device according to the invention has a compressible space or chamber underneath the vibrating part which damps the vibrations, when suitably coordinated with the liquid bath. The space is preferably gas-filled and its damping properties can be varied by feeding additional gas through a line which can be shut off by a member, or by bleeding some of the filling through a further line which can likewise be shut off by a member.
摘要:
High resolution resist structures with steep edges are obtained using standard equipment, with high sensitivity, particularly in the deep UV range. A photoresist layer consisting of a polymer having anhydride groups and blocked imide- or phenolic hydroxyl groups and of a photoactive component which forms a strong acid during irradiation is first deposited on a substrate, followed by irradiation with a patterned image. The irradiated photoresist layer is then treated with a water-based or a water-alcohol-based solution of a polyfunctional amino- or hydroxy-siloxane, and is etched in an oxygen-containing plasma.