Semiconductor laser
    1.
    发明授权
    Semiconductor laser 失效
    半导体激光器

    公开(公告)号:US4359775A

    公开(公告)日:1982-11-16

    申请号:US178568

    申请日:1980-08-15

    摘要: A semi-conductor laser comprising a crystal having a sequence of layers forming a heterostructure diode and which includes a laser active zone interposed between a pair of semiconductor layers. Each of these semi-conductor layers has a band gap which is greater than that of the layers within the laser active zone. The laser active zone includes a first semiconductor layer having a given band gap, and at least second and third semiconductor layers each having a band gap which is greater than that of the first layer. The first layer is contiguous with and interposed between semiconductor layers each having a band gap which is greater than that of said first layer and forms a pn-junction with one of those contiguous layers. A strip-shaped region of a uniform conductivity type diffused from the surface of the crystal penetrates into at least one layer of the laser active zone but does not penetrate into the first layer.

    摘要翻译: 一种半导体激光器,包括具有形成异质结构二极管的层序列的晶体,并且包括插入在一对半导体层之间的激光器活性区域。 这些半导体层中的每一个具有比激光活性区内的层的带隙大的带隙。 激光活性区域包括具有给定带隙的第一半导体层,以及至少第二和第三半导体层,每个半导体层的带隙大于第一层的带隙。 第一层与每个具有大于所述第一层的带隙的带隙相邻并且插入在半导体层之间并且与这些邻接层之一形成pn结。 从晶体表面扩散的均匀导电类型的条状区域穿透至激光活性区域的至少一层,但不会渗入第一层。

    Mushroom-shaped semiconductor stripe laser
    2.
    发明授权
    Mushroom-shaped semiconductor stripe laser 失效
    蘑菇状半导体条纹激光

    公开(公告)号:US4692926A

    公开(公告)日:1987-09-08

    申请号:US727251

    申请日:1985-04-25

    IPC分类号: H01S5/227 H01S3/19

    CPC分类号: H01S5/227 H01S5/2275

    摘要: A mushroom-shaped semiconductor stripe laser, particularly with transversal, monomode light distribution and a double heterostructure comprised of a substrate, a laser-active zone, a cover layer and an electrically contacting metal layer for the cover layer with the cover layer being underetched such that a mushroom-shaped structure is formed in which the laser-active zone is constricted to a stripe-shaped region. The ratio of the width of the cover layer to the width of the laser-active zone lies in a range between two and five, and the cover layer is electrically conductively connected with the metal layer on its outer surface as well as on at least one of its side surfaces.

    摘要翻译: 伞形半导体条纹激光器,特别是具有横向,单模光分布和双异质结构,包括基底,激光活性区,覆盖层和用于覆盖层的电接触金属层,其覆盖层未被蚀刻 形成蘑菇状结构,其中激光活性区域被收缩成条形区域。 覆盖层的宽度与激光 - 活性区域的宽度的比率在2至5之间的范围内,并且覆盖层与其外表面上的金属层以及至少一个 的侧面。

    Radiation sensitive recording material
    3.
    发明授权
    Radiation sensitive recording material 失效
    辐射敏感记录材料

    公开(公告)号:US3942996A

    公开(公告)日:1976-03-09

    申请号:US427535

    申请日:1973-12-26

    IPC分类号: G03C1/685 C08K5/15 C08L1/08

    CPC分类号: G03C1/685

    摘要: A radiation sensitive recording material contains a layer of a layer-forming substance and incorporated therein an organic halogen compound capable of producing hydrogenhalide when struck by high energy radiation, and a chromogenic arylvinyl pyran or arylvinylthio pyran which changes its color by reaction with hydrolide. The material provides records with high stability.

    摘要翻译: 辐射敏感记录材料含有层形成物质层,并且其中掺入能够通过高能量辐射而产生氢卤化物的有机卤素化合物,以及通过与氢化物反应而改变其颜色的显色芳基乙烯基吡喃或芳基乙烯基硫代吡喃。 该材料提供高稳定性的记录。