公开(公告)号：US06969502B2

公开(公告)日：2005-11-29

申请号：US10220115

申请日：2001-03-02

申请人： Gunther Wehrhan ,  Peter Elzner ,  Ewald Moersen ,  Richard Schatter ,  Hans-Joerg Axmann ,  Thorsten Reichardt

发明人： Gunther Wehrhan ,  Peter Elzner ,  Ewald Moersen ,  Richard Schatter ,  Hans-Joerg Axmann ,  Thorsten Reichardt

IPC分类号： G03F7/20 ,  C30B11/00 ,  C30B29/12 ,  H01L21/027 ,  C01B9/00 ,  C30B13/16

CPC分类号： C30B11/003 ,  C30B11/00 ,  C30B29/12 ,  Y10S117/90 ,  Y10T117/10

摘要： In the method for growing large-volume monocrystals crystal raw material is heated in a melting vessel with heating elements to a temperature above its melting point until a melt is formed. A monocrystal is then formed on the bottom of the melting vessel by lowering the temperature at least to the crystallization point. A solid/liquid phase boundary is formed between the monocrystal and the melt. The monocrystal grows towards the melt surface in a direction that is perpendicular to the phase boundary. A vertical axial temperature gradient is produced and maintained between the bottom of the melting vessel and its upper opening and heat inflow and/or heat outflow through side walls of the melting vessel is prevented, so that the solid/liquid phase boundary has a curvature radius of at least one meter. A crystal-growing device for performing this process is also described.

摘要翻译： 在生长大容量单晶的方法中，将晶体原料在具有加热元件的熔融容器中加热到高于其熔点的温度，直到形成熔体。 然后通过将温度至少降低至结晶点，在熔融容器的底部形成单晶。 在单晶和熔体之间形成固相/液相边界。 单晶在垂直于相边界的方向上朝着熔体表面生长。 在熔化槽的底部与其上部开口之间产生垂直的轴向温度梯度，并且防止了通过熔融容器的侧壁的热流入和/或热流出，使得固/液相边界具有曲率半径 至少一米。 还描述了用于执行该处理的晶体生长装置。

公开(公告)号：US06932864B2

公开(公告)日：2005-08-23

申请号：US10128856

申请日：2002-04-23

申请人： Lutz Parthier ,  Frank-Thomas Lentes ,  Gunther Wehrhan ,  Burkhard Speit ,  Hans-Joerg Axmann

发明人： Lutz Parthier ,  Frank-Thomas Lentes ,  Gunther Wehrhan ,  Burkhard Speit ,  Hans-Joerg Axmann

IPC分类号： G01B11/00 ,  C30B11/00 ,  C30B29/12 ,  C30B15/20 ,  C30B19/10

CPC分类号： C30B11/006

摘要： In the method and apparatus for measuring the position of the phase interface during growth of a crystal from a melt in a crystal growth container according to the VGF method an incident optical signal is propagated to the phase interface between the melt and the crystal through a window (16) in the container (10) and a received optical signal reflected from the phase interface (14) is measured to determine the position of the phase interface. The position of the phase interface is established from the reflected signal by triangulation with a confocal optic system, by interferometric balancing or by transit time of the optical signal. The window (16) is preferably mounted in a preferably tilted orientation at the end of a tube (15), which is immersed in the melt (12).

摘要翻译： 在根据VGF方法在晶体生长容器中从熔体生长晶体期间测量相界面的位置的方法和装置中，入射光信号通过窗口传播到熔体和晶体之间的相界面 （10）中的（16）并且从相位界面（14）反射的接收的光信号被测量以确定相位界面的位置。 通过用共焦光学系统进行三角测量，通过干涉平衡或光信号的传播时间，从反射信号建立相位接口的位置。 窗口（16）优选地在浸在熔体（12）中的管（15）的端部处以优选倾斜的方向安装。

公开(公告)号：US20060201412A1

公开(公告)日：2006-09-14

申请号：US11366634

申请日：2006-03-02

申请人： Christian Poetisch ,  Gunther Wehrhahn ,  Lutz Parthier ,  Hans-Joerg Axmann ,  Joerg Staeblein

发明人： Christian Poetisch ,  Gunther Wehrhahn ,  Lutz Parthier ,  Hans-Joerg Axmann ,  Joerg Staeblein

IPC分类号： C30B15/00 ,  C30B21/06 ,  C30B27/02 ,  C30B28/10 ,  C30B30/04

CPC分类号： C30B29/12 ,  C30B11/00

摘要： The method produces highly uniform, low-stress single crystals, especially of calcium fluoride. A single crystal drawn from a melt apparatus with a suitable process is cooled and subsequently subjected to a tempering step. The method is characterized by rapid cooling in a temperature range between less than or equal to 1300° C. and greater than or equal to 1050° C. with a cooling rate of greater than or equal to 10 K/h and preferably less than or equal to 60 K/h.

摘要翻译： 该方法产生高度均匀的低应力单晶，特别是氟化钙。 将从具有合适工艺的熔融装置中拉出的单晶冷却并随后进行回火步骤。 该方法的特征在于在小于或等于1300℃和大于或等于1050℃的温度范围内快速冷却，冷却速率大于或等于10K / h，优选小于或等于或低于 等于60K / h。