公开(公告)号：US06933543B2

公开(公告)日：2005-08-23

申请号：US10874396

申请日：2004-06-22

Applicant: Jae Kyoung Mun ,  Hong Gu Ji ,  Hokyun Ahn ,  Heacheon Kim

Inventor： Jae Kyoung Mun ,  Hong Gu Ji ,  Hokyun Ahn ,  Heacheon Kim

IPC: H01L27/095 ,  H01L29/739 ,  H01L29/778 ,  H01L31/072

CPC classification number: H01L29/7785

Abstract: A high frequency switch device includes an epitaxy substrate that is formed by sequentially stacking an AlGaAs/GaAs superlattic buffer layer, a first Si planar doping layer, an undoped first AlGaAs spacer, an undoped InGaAs layer, an undoped second AlGaAs spacer, a second Si planar doping layer having a doping density greater than that of the first Si planar doping layer, and an undoped GaAs/AlGaAs capping layer on a GaAs semi-insulated substrate. The undoped GaAs/AlGaAs capping layer is formed with a source electrode and a drain electrode that form an ohmic contact with the undoped GaAs/AlGaAs capping layer thereon, and a gate electrode formed between the source electrode and the drain electrode, thereby forming a Schottky contact with the undoped GaAs/AlGaAs capping layer.

Abstract translation: 高频开关器件包括：通过依次层叠AlGaAs / GaAs超缓冲层，第一Si平面掺杂层，未掺杂的第一AlGaAs间隔物，未掺杂的InGaAs层，未掺杂的第二AlGaAs间隔物，第二Si 具有大于第一Si平面掺杂层的掺杂密度的平坦掺杂层和GaAs半绝缘衬底上的未掺杂的GaAs / AlGaAs覆盖层。 未掺杂的GaAs / AlGaAs覆盖层形成有与其上的未掺杂的GaAs / AlGaAs覆盖层形成欧姆接触的源电极和漏电极，以及形成在源电极和漏电极之间的栅电极，由此形成肖特基 与未掺杂的GaAs / AlGaAs覆盖层接触。

公开(公告)号：US20050121694A1

公开(公告)日：2005-06-09

申请号：US10874396

申请日：2004-06-22

Applicant: Jae Mun ,  Hong Ji ,  Hokyun Ahn ,  Heacheon Kim

Inventor： Jae Mun ,  Hong Ji ,  Hokyun Ahn ,  Heacheon Kim

IPC: H01L27/095 ,  H01L29/739 ,  H01L29/778 ,  H01L31/072

CPC classification number: H01L29/7785

Abstract: A high frequency switch device includes an epitaxy substrate that is formed by sequentially stacking an AlGaAs/GaAs superlattic buffer layer, a first Si planar doping layer, an undoped first AlGaAs spacer, an undoped InGaAs layer, an undoped second AlGaAs spacer, a second Si planar doping layer having a doping density greater than that of the first Si planar doping layer, and an undoped GaAs/AlGaAs capping layer on a GaAs semi-insulated substrate. The undoped GaAs/AlGaAs capping layer is formed with a source electrode and a drain electrode that form an ohmic contact with the undoped GaAs/AlGaAs capping layer thereon, and a gate electrode formed between the source electrode and the drain electrode, thereby forming a Schottky contact with the undoped GaAs/AlGaAs capping layer.

Abstract translation: 高频开关器件包括：通过依次层叠AlGaAs / GaAs超缓冲层，第一Si平面掺杂层，未掺杂的第一AlGaAs间隔物，未掺杂的InGaAs层，未掺杂的第二AlGaAs间隔物，第二Si 具有大于第一Si平面掺杂层的掺杂密度的平坦掺杂层和GaAs半绝缘衬底上的未掺杂的GaAs / AlGaAs覆盖层。 未掺杂的GaAs / AlGaAs覆盖层形成有与其上的未掺杂的GaAs / AlGaAs覆盖层形成欧姆接触的源电极和漏电极，以及形成在源电极和漏电极之间的栅电极，由此形成肖特基 与未掺杂的GaAs / AlGaAs覆盖层接触。

公开(公告)号：US06689667B2

公开(公告)日：2004-02-10

申请号：US10209252

申请日：2002-07-30

Applicant: Eun soo Nam ,  Heacheon Kim

Inventor： Eun soo Nam ,  Heacheon Kim

IPC: H01L218222

CPC classification number: B82Y20/00 ,  H01L31/035236 ,  H01L31/105

Abstract: The present invention relates to a photoreceiver and method of manufacturing the same. For the purpose of a selective detection of a specific wavelength, if a waveguide type photodetector using a multiple quantum-well layer having a quantum confined stark effect as an optical absorption layer, the wavelength that is absorbed by the stark effect by which the transition energy edge of the optical absorption band is varied depending on the intensity of an electric field applied to the multiple quantum-well layer is varied. Thus, a wavelength selective detection characteristic can be varied simply implemented. The waveguide type photodetector of this structure is integrated on a semi-insulating InP substrate with a heterogeneous bipolar transistor having an n+InP/p+InGaAs/n−InGaAs/n+InGaAsP high-gain amplification characteristic. Thus, a photoreceiver of a high performance and a high sensitivity having a specific wavelength selective detection function that can be used in an optical communication system of a high-performance wavelength-multiplexing mode can be provided.

Abstract translation: 光接收器及其制造方法技术领域本发明涉及光接收器及其制造方法。 为了选择性地检测特定波长，如果使用具有量子局限性效应的多量子阱层作为光吸收层的波导型光电检测器，则通过转移能量的斯塔克效应吸收的波长 光吸收带的边缘根据施加到多量子阱层的电场的强度而变化。 因此，可以简单地实现波长选择性检测特性。 该结构的波导型光检测器集成在具有n + InP / p + InGaAs / n-InGaAs / n + InGaAsP高增益放大特性的异质双极晶体管的半绝缘InP衬底上。 因此，可以提供具有可用于高性能波长多路复用模式的光通信系统中的具有特定波长选择性检测功能的高性能和高灵敏度的光接收器。