公开(公告)号：US5147501A

公开(公告)日：1992-09-15

申请号：US464431

申请日：1990-01-12

申请人： Neil A. Cade ,  Rosemary A. Lee ,  Chandrakant Patel ,  Helen A. Williams

发明人： Neil A. Cade ,  Rosemary A. Lee ,  Chandrakant Patel ,  Helen A. Williams

IPC分类号： H01J1/304 ,  H01J9/02 ,  H01T4/10

CPC分类号： H01J9/025 ,  H01J1/3042

摘要： In the production of micron-size pyramid emitters for field emission devices, a first layer of electrically-conductive material, such as single crystal silicon or metal, is etched to form column-like structures each of which tapers from each end of the column towards an intermediate portion along its length. A second conductive layer is formed in contact with the free ends of the columns, and etching of the columns is then resumed until the intermediate portion of each column is etched through, leaving a pair of pyramid emitters pointing towards one another and supported by the respective conductive layer.

公开(公告)号：US4968382A

公开(公告)日：1990-11-06

申请号：US464170

申请日：1990-01-12

申请人： Susan E. Jacobson ,  Rosemary A. Lee ,  Helen A. Williams

发明人： Susan E. Jacobson ,  Rosemary A. Lee ,  Helen A. Williams

IPC分类号： H01J1/30 ,  H01J1/304 ,  H01J9/02 ,  H01T4/10

CPC分类号： H01J9/025 ,  H01J1/3042

摘要： In the production of micron-size pyramid emitters for field emission devices, very sharp emitter points are achieved by providing a layer of suitable metal, metal compound or semiconductor, forming masking pads over the required emitter positions, etching the layer so that column-like structures are formed beneath the pads, removing the pads, and then subjecting the columns to dry etching, such as plasma etching, reactive ion etching, ion beam milling or reactive ion beam milling. The dry etching process shapes the columns into pyramids with a tip size of the order of 0.03 microns.