Electronic devices
    1.
    发明授权
    Electronic devices 失效
    电子设备

    公开(公告)号:US4968382A

    公开(公告)日:1990-11-06

    申请号:US464170

    申请日:1990-01-12

    CPC分类号: H01J9/025 H01J1/3042

    摘要: In the production of micron-size pyramid emitters for field emission devices, very sharp emitter points are achieved by providing a layer of suitable metal, metal compound or semiconductor, forming masking pads over the required emitter positions, etching the layer so that column-like structures are formed beneath the pads, removing the pads, and then subjecting the columns to dry etching, such as plasma etching, reactive ion etching, ion beam milling or reactive ion beam milling. The dry etching process shapes the columns into pyramids with a tip size of the order of 0.03 microns.

    Field induced emission devices and method of forming same
    3.
    发明授权
    Field induced emission devices and method of forming same 失效
    场致发射装置及其形成方法

    公开(公告)号:US4983878A

    公开(公告)日:1991-01-08

    申请号:US235471

    申请日:1988-08-24

    IPC分类号: H01J1/304 H01J9/02 H01J21/10

    摘要: In a method of forming a field-induced emission device, a cathode is provided on a substrate, for example by etching away the substrate to leave a pointed projection. The projection may be covered with a metallic layer to enhance the field-induced cathode emission. A first insulating layer is formed over the substrate, with an aperture therein corresponding to the cathode position. An apertured control grid layer is formed over the first insulating layer and an apertured second insulating layer is formed thereon. A tunnel formed by the apertures in the insulating and conductive layers is filled with a plug of soluble material. An anode strip is formed on the second insulating layer and over the plug, and the plug is then dissolved through gaps at the edges of the anode strip, thereby leaving an unsupported area of anode strip over the cathode. The tunnel may then be evacuated or may be filled with gas and the gaps at the edges of the anode strip will then be sealed to retain the vacuum or gas. If a diode structure is required, the control grid layer and the second insulating layer will be omitted. A switching device may be constructed by associating a number of the cathodes on the substrate with a common control grid and a common anode. The anode, grid and cathode structures may be so dimensioned as to form a transmission line.

    Method of making electronic devices
    4.
    发明授权
    Method of making electronic devices 失效
    制造电子设备的方法

    公开(公告)号:US4973378A

    公开(公告)日:1990-11-27

    申请号:US485445

    申请日:1990-02-27

    IPC分类号: H01T1/22 H01J9/02 H01T4/12

    CPC分类号: H01J9/025 H01T4/12

    摘要: A field emission device which may be used, for example, as a surge arrester, comprises two electrode structures each comprising a substrate from which project tapered electrically-conductive emitter bodies. The structures are bonded together, face-to-face, so that the emitters all project into a sealed space formed between the substrates. The space may be evacuated or gas-filled. The emitters are formed by depositing a conductive layer on each substrate, forming masking pads on the layer at the required emitter positions, and etching the conductive layer to leave a tapered body beneath each pad. The dimensions of the emitter bodies and the spacing between the substrates are preferably of the order of a few microns.

    Field emission vacuum devices
    5.
    发明授权
    Field emission vacuum devices 失效
    场致发射真空装置

    公开(公告)号:US4827177A

    公开(公告)日:1989-05-02

    申请号:US92426

    申请日:1987-09-03

    CPC分类号: H01J21/105

    摘要: A vacuum valve device comprises a substrate on which is formed an updoped silicon layer from which a silicon dioxide layer is grown. First, second and third electrode structures are formed on the silicon dioxide layer by depositing a metallic layer and etching away unwanted portions of the layer. The first electrode structure has a pointed end and/or a sharp edge and/or is formed of low work function material so that, when a suitable voltage is applied between the first and third electrode structures, electrons are emitted from the first electrode structure due to a field emission process. Electrons therefore flow from the first to the third electrode structure substantially parallel to the substrate. The second electrode structure acts as a control electrode.

    摘要翻译: 真空阀装置包括衬底,在衬底上形成有二氧化硅层从中生长的上游硅层。 首先,通过沉积金属层并蚀刻掉层的不希望的部分,在二氧化硅层上形成第二和第三电极结构。 第一电极结构具有尖端和/或尖锐边缘和/或由低功函数材料形成,使得当在第一和第三电极结构之间施加合适的电压时,电子从第一电极结构发射出来 到场发射过程。 因此,电子从基本平行于衬底的第一电极结构流到第三电极结构。 第二电极结构用作控制电极。