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公开(公告)号：US09896745B2
公开(公告)日：2018-02-20
申请号：US10501117
申请日：2002-12-04
申请人： Takeo Okabe , Hirohito Miyashita
发明人： Takeo Okabe , Hirohito Miyashita
IPC分类号： C22C9/00 , C22C9/01 , C22C9/02 , C23C14/34 , H01L23/532
CPC分类号： C22C9/02 , C22C9/00 , C22C9/01 , C23C14/3414 , H01L23/53233 , H01L2924/0002 , H01L2924/00
摘要： A copper alloy sputtering target most suitable for formation of an interconnection material of a semiconductor device, particularly for formation of a seed layer, characterized in that the target contains 0.4 to 5 wt % of Sn, and the structure of the target does not substantially contain any precipitates, and the resistivity of the target material is 2.2 μΩcm or more. This target enables formation of an interconnection material of a semiconductor device, particularly a uniform seed layer stable during copper electroplating and is excellent in sputtering deposition characteristics. A method for manufacturing such a target is also disclosed.
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公开(公告)号：US09685307B2
公开(公告)日：2017-06-20
申请号：US11719013
申请日：2005-10-14
申请人： Hirohito Miyashita
发明人： Hirohito Miyashita
CPC分类号： H01J37/3423 , C23C14/3407 , H01J37/3435
摘要： Provided is a tabular sputtering target on which an erosion portion and a non-erosion portion are formed, and the surface area thereof exceeds 100% but is less than 125% of the surface area when the target is assumed to be planar. Also provided is a tabular sputtering target on which an erosion portion and a non-erosion portion are formed comprising one or more concave portions on the target surface region, and the surface area thereof exceeds 100% but is less than 125% of the surface area when the target is assumed to be planar. An inexpensive, small-capacity power supply unit can be used by minimizing the electrical variations in the sputtering circuit as much as possible throughout the lifespan of the target through self sputtering or high power sputtering.
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公开(公告)号：US07740718B2
公开(公告)日：2010-06-22
申请号：US10498147
申请日：2002-11-28
IPC分类号： C22C19/03
CPC分类号： C22C19/03 , C22F1/10 , C23C14/3414 , G11B5/851 , H01F41/183
摘要： Provided is high purity nickel or nickel alloy target for magnetron sputtering having superior sputtering film uniformity and in which the magnetic permeability of the target is 100 or more, and this high purity nickel or a nickel alloy target for magnetron sputtering capable of achieving a favorable film uniformity (evenness of film thickness) and superior in plasma ignition (firing) even during the manufacturing process employing a 300 mm wafer. The present invention also provides the manufacturing method of such high purity nickel or nickel alloy target.
摘要翻译： 提供了用于磁控溅射的高纯度镍或镍合金靶，其溅射膜均匀性优异，靶的导磁率为100以上，该高纯度镍或用于磁控溅射的镍合金靶能够获得良好的膜 即使在使用300mm晶片的制造过程中，均匀性（膜厚度均匀性）和等离子体点火（烧制）也优异。 本发明还提供了这种高纯镍或镍合金靶的制造方法。
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公开(公告)号：US20090139863A1
公开(公告)日：2009-06-04
申请号：US12367572
申请日：2009-02-09
申请人： Takeo Okabe , Hirohito Miyashita
发明人： Takeo Okabe , Hirohito Miyashita
IPC分类号： C23C14/56
CPC分类号： H01L21/2855 , C22C9/01 , C22C9/02 , C23C14/185 , C23C14/3414 , H01L21/76873 , H01L2924/0002 , H01L2924/00
摘要： A first copper alloy sputtering target comprising 0.5 to 4.0 wt % of Al and 0.5 wtppm or less of Si and a second copper alloy sputtering target comprising 0.5 to 4.0 wt % of Sn and 0.5 wtppm or less of Mn are disclosed. The first and/or the second alloy sputtering target can further comprise one or more elements selected from among Sb, Zr, Ti, Cr, Ag, Au, Cd, In and As in a total amount of 1.0 wtppm or less. A semiconductor element wiring formed by the use of the above targets is also disclosed. The above copper alloy sputtering target allows the formation of a wiring material for a semiconductor element, in particular, a seed layer being stable, uniform and free from the occurrence of coagulation during electrolytic copper plating and exhibits excellent sputtering film formation characteristics.
摘要翻译： 公开了包含0.5〜4.0重量％的Al和0.5重量ppm以下的Si的第一铜合金溅射靶，以及包含Sn：0.5〜4.0重量％，Mn为0.5重量ppm以下的第二铜合金溅射靶。 第一和/或第二合金溅射靶可以进一步包含选自Sb，Zr，Ti，Cr，Ag，Au，Cd，In和As中的一种或多种元素，总量为1.0重量ppm以下。 还公开了通过使用上述目标形成的半导体元件布线。 上述铜合金溅射靶允许形成用于半导体元件的布线材料，特别是形成电解铜电镀期间稳定，均匀且没有凝结的种子层，并且显示出优异的溅射膜形成特性。
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公开(公告)号：US20090057142A1
公开(公告)日：2009-03-05
申请号：US12259396
申请日：2008-10-28
IPC分类号： C23C14/34
CPC分类号： C22C27/00 , C23C14/3414 , H01L21/31645 , Y10S148/158
摘要： A hafnium alloy target containing either or both of Zr and Ti in a gross amount of 100 wtppm-10 wt % in Hf; wherein the average crystal grain size is 1-100 μm, the impurities of Fe, Cr and Ni are respectively 1 wtppm or less, and the habit plane ratio of the plane {002} and three planes {103}, {014} and {015} lying within 35° from {002} is 55% or greater, and the variation in the total sum of the intensity ratios of these four planes depending on locations is 20% or less. As a result, obtained is a hafnium alloy target having favorable deposition property and deposition speed, which generates few particles, and which is suitable for forming a high dielectric gate insulation film such as HfO or HfON film, and the manufacturing method thereof.
摘要翻译： 在Hf中含有总量为100重量ppm-10重量％的Zr和Ti中的任一种或两者的铪合金靶; 其平均晶粒尺寸为1-100μm，Fe，Cr和Ni的杂质分别为1wtppm以下，平面{002}和三个平面{103} {014}和{ 位于距离{002}的35°以内的倾角为55％以上，并且根据位置的这四个平面的强度比的总和的变化为20％以下。 结果，得到了具有良好的沉积性能和沉积速度的铪合金靶及其制造方法，该铪合金靶产生很少的颗粒，并且适合于形成诸如HfO或HfON膜的高介电栅极绝缘膜。
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公开(公告)号：US20070051624A1
公开(公告)日：2007-03-08
申请号：US10596653
申请日：2004-11-30
申请人： Takeo Okabe , Hirohito Miyashita
发明人： Takeo Okabe , Hirohito Miyashita
IPC分类号： C23C14/00
CPC分类号： H01J37/3435 , C22C9/06 , C22C9/10 , C22C25/00 , C23C14/3414
摘要： Provided is a copper or copper alloy target/copper alloy backing plate assembly in which the anti-eddy current characteristics and other characteristics required in a magnetron sputtering target are simultaneously pursued in a well balanced manner. This copper or copper alloy target/copper alloy backing plate assembly is used for magnetron sputtering, and the copper alloy backing plate is formed from low beryllium copper alloy or Cu—Ni—Si-based alloy. Further, with this copper or copper alloy target/copper alloy backing plate assembly, the copper alloy backing plate has electrical conductivity of 35 to 60% (IACS), and 0.2% proof stress of 400 to 850 MPa.
摘要翻译： 提供了一种铜或铜合金靶/铜合金背板组件，其中以良好平衡的方式同时追求磁控溅射靶中所需的抗涡流特性和其它特性。 该铜或铜合金靶/铜合金背板组件用于磁控溅射，铜合金背板由低铍铜合金或Cu-Ni-Si基合金形成。 此外，对于铜或铜合金靶/铜合金背板组件，铜合金背板的导电率为35〜60％（IACS），0.2％屈服应力为400〜850MPa。
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公开(公告)号：US20050121320A1
公开(公告)日：2005-06-09
申请号：US10501117
申请日：2002-12-04
申请人： Takeo Okabe , Hirohito Miyashita
发明人： Takeo Okabe , Hirohito Miyashita
CPC分类号： C22C9/02 , C22C9/00 , C22C9/01 , C23C14/3414 , H01L23/53233 , H01L2924/0002 , H01L2924/00
摘要： A copper alloy sputtering target most suitable for formation of an interconnection material of a semiconductor device, particularly for formation of a seed layer, characterized in that the target contains 0.4 to 5 wt % of Sn, and the structure of the target does not substantially contain any precipitates, and the resistivity of the target material is 2.2 μΩcm or more. This target enables formation of an interconnection material of a semiconductor device, particularly a uniform seed layer stable during copper electroplating and is excellent in sputtering deposition characteristics. A method for manufacturing such a target is also disclosed.
摘要翻译： 最适合于形成半导体器件的互连材料的铜合金溅射靶，特别是用于形成种子层的特征在于，所述靶包含0.4〜5重量％的Sn，所述靶的结构基本上不含 任何沉淀物，目标材料的电阻率为2.2微克或更高。 该目标能够形成半导体器件的互连材料，特别是在电镀铜期间稳定的均匀种子层，并且溅射沉积特性优异。 还公开了制造这种靶的方法。
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公开(公告)号：US07618505B2
公开(公告)日：2009-11-17
申请号：US11332045
申请日：2006-01-13
IPC分类号： C22F1/10
CPC分类号： C22C19/03 , C22F1/10 , C23C14/3414 , G11B5/851 , H01F41/183
摘要： Provided is high purity nickel or nickel alloy target for Magnetron sputtering having superior sputtering film uniformity and in which the magnetic permeability of the target is 100 or more, and this high purity nickel or a nickel alloy target for magnetron sputtering capable of achieving a favorable film uniformity (evenness of film thickness) and superior plasma ignition (firing) even during the manufacturing process employing a 300 mm wafer. The present invention also provides the manufacturing method of such high purity nickel or nickel alloy target.
摘要翻译： 提供了具有优异的溅射膜均匀性并且靶的导磁率为100以上的用于磁控管溅射的高纯度镍或镍合金靶，并且该高纯度镍或用于获得有利膜的磁控溅射的镍合金靶 即使在使用300mm晶片的制造过程中，均匀性（膜厚均匀性）和优异的等离子体点火（烧制）。 本发明还提供了这种高纯镍或镍合金靶的制造方法。
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公开(公告)号：US20090140430A1
公开(公告)日：2009-06-04
申请号：US12367581
申请日：2009-02-09
申请人： Takeo Okabe , Hirohito Miyashita
发明人： Takeo Okabe , Hirohito Miyashita
IPC分类号： H01L23/535 , H01L21/768
CPC分类号： H01L21/2855 , C22C9/01 , C22C9/02 , C23C14/185 , C23C14/3414 , H01L21/76873 , H01L2924/0002 , H01L2924/00
摘要： A first copper alloy sputtering target comprising 0.5 to 4.0 wt % of Al and 0.5 wtppm or less of Si and a second copper alloy sputtering target comprising 0.5 to 4.0 wt % of Sn and 0.5 wtppm or less of Mn are disclosed. The first and/or the second alloy sputtering target can further comprise one or more elements selected from among Sb, Zr, Ti, Cr, Ag, Au, Cd, In and As in a total amount of 1.0 wtppm or less. A semiconductor element wiring formed by the use of the above targets is also disclosed. The above copper alloy sputtering target allows the formation of a wiring material for a semiconductor element, in particular, a seed layer being stable, uniform and free from the occurrence of coagulation during electrolytic copper plating and exhibits excellent sputtering film formation characteristics.
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公开(公告)号：US20090050475A1
公开(公告)日：2009-02-26
申请号：US12259391
申请日：2008-10-28
IPC分类号： C23C14/34
CPC分类号： C22C27/00 , C23C14/3414 , H01L21/31645 , Y10S148/158
摘要： A hafnium alloy target containing either or both of Zr and Ti in a gross amount of 100 wtppm−10 wt % in Hf, wherein the average crystal grain size is 1-100 μm, the impurities of Fe, Cr and Ni are respectively 1 wtppm or less, and the habit plane ratio of the plane {002} and three planes {103}, {014} and {015} lying within 35° from {002} is 55% or greater, and the variation in the total sum of the intensity ratios of these four planes depending on locations is 20% or less. As a result, obtained is a hafnium alloy target having favorable deposition property and deposition speed, which generates few particles, and which is suitable for forming a high dielectric gate insulation film such as HfO or HfON film, and the manufacturing method thereof.
摘要翻译： 在Hf中，含有总量为100重量ppm〜10重量％的Zr和Ti中的任一种或两者的铪合金靶，平均晶粒尺寸为1-100μm，Fe，Cr和Ni的杂质分别为1重量ppm 以下，与{002}相距在35°以内的平面{002}和三个平面{103}，{014}和{015}的习惯平面比为55％以上， 根据位置的这四个平面的强度比为20％以下。 结果，得到了具有良好的沉积性能和沉积速度的铪合金靶及其制造方法，该铪合金靶产生很少的颗粒，并且适合于形成诸如HfO或HfON膜的高介电栅极绝缘膜。
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