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公开(公告)号：US08241438B2
公开(公告)日：2012-08-14
申请号：US12259391
申请日：2008-10-28
IPC分类号： C22C14/00
CPC分类号： C22C27/00 , C23C14/3414 , H01L21/31645 , Y10S148/158
摘要： A hafnium alloy target containing either or both of Zr and Ti in a gross amount of 100 wtppm-10 wt % in Hf, wherein the average crystal grain size is 1-100 μm, the impurities of Fe, Cr and Ni are respectively 1 wtppm or less, and the habit plane ratio of the plane {002} and three planes {103}, {014} and {015} lying within 35° from {002} is 55% or greater, and the variation in the total sum of the intensity ratios of these four planes depending on locations is 20% or less. As a result, obtained is a hafnium alloy target having favorable deposition property and deposition speed, which generates few particles, and which is suitable for forming a high dielectric gate insulation film such as HfO or HfON film, and the manufacturing method thereof.
摘要翻译： 在Hf中，含有总量为100重量ppm-10重量％的Zr和Ti中的任一种或两者的铪合金靶，其中平均晶粒尺寸为1-100μm，Fe，Cr和Ni的杂质分别为1重量ppm 以下，与{002}相距在35°以内的平面{002}和三个平面{103}，{014}和{015}的习惯平面比为55％以上， 根据位置的这四个平面的强度比为20％以下。 结果，得到了具有良好的沉积性能和沉积速度的铪合金靶及其制造方法，该铪合金靶产生很少的颗粒，并且适合于形成诸如HfO或HfON膜的高介电栅极绝缘膜。
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公开(公告)号：US20090050475A1
公开(公告)日：2009-02-26
申请号：US12259391
申请日：2008-10-28
IPC分类号： C23C14/34
CPC分类号： C22C27/00 , C23C14/3414 , H01L21/31645 , Y10S148/158
摘要： A hafnium alloy target containing either or both of Zr and Ti in a gross amount of 100 wtppm−10 wt % in Hf, wherein the average crystal grain size is 1-100 μm, the impurities of Fe, Cr and Ni are respectively 1 wtppm or less, and the habit plane ratio of the plane {002} and three planes {103}, {014} and {015} lying within 35° from {002} is 55% or greater, and the variation in the total sum of the intensity ratios of these four planes depending on locations is 20% or less. As a result, obtained is a hafnium alloy target having favorable deposition property and deposition speed, which generates few particles, and which is suitable for forming a high dielectric gate insulation film such as HfO or HfON film, and the manufacturing method thereof.
摘要翻译： 在Hf中，含有总量为100重量ppm〜10重量％的Zr和Ti中的任一种或两者的铪合金靶，平均晶粒尺寸为1-100μm，Fe，Cr和Ni的杂质分别为1重量ppm 以下，与{002}相距在35°以内的平面{002}和三个平面{103}，{014}和{015}的习惯平面比为55％以上， 根据位置的这四个平面的强度比为20％以下。 结果，得到了具有良好的沉积性能和沉积速度的铪合金靶及其制造方法，该铪合金靶产生很少的颗粒，并且适合于形成诸如HfO或HfON膜的高介电栅极绝缘膜。
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公开(公告)号：US20060189164A1
公开(公告)日：2006-08-24
申请号：US10548347
申请日：2004-02-21
IPC分类号： H01L23/58 , H01L21/31 , H01L21/469
CPC分类号： H01L21/02181 , C22C27/00 , C23C14/3414 , H01L21/02266 , H01L21/31645 , Y10S148/158
摘要： Provided is a hafnium alloy target containing either or both of Zr and Ti in a gross amount of 100 wtppm-10 wt % in Hf, wherein the average crystal grain size is 1-100 μm, the impurities of Fe, Cr and Ni are respectively 1 wtppm or less, and the habit plane ratio of the plane {002} and three planes {103}, {014} and {015} lying within 350 from {002} is 55% or greater, and the variation in the total sum of the intensity ratios of these four planes depending on locations is 20% or less. As a result, obtained is a hafnium alloy target having favorable deposition property and deposition speed, which generates few particles, and which is suitable for forming a high dielectric gate insulation film such as HfO or HfON film, and the manufacturing method thereof.
摘要翻译： 本发明提供一种铪合金靶，其含有Zr和Ti中的任一种或两者，其总量为100重量ppm-10重量％，其中平均晶粒尺寸为1-100微米，Fe，Cr和Ni的杂质分别为 1％以下，{002}的平面{002}和三面{103}，{014}和{015}的习惯平面比在55％以内，为55％以上，总和的变化 这四个平面的强度比取决于位置的20％以下。 结果，得到了具有良好的沉积性能和沉积速度的铪合金靶及其制造方法，该铪合金靶产生很少的颗粒，并且适合于形成诸如HfO或HfON膜的高介电栅极绝缘膜。
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公开(公告)号：US20090057142A1
公开(公告)日：2009-03-05
申请号：US12259396
申请日：2008-10-28
IPC分类号： C23C14/34
CPC分类号： C22C27/00 , C23C14/3414 , H01L21/31645 , Y10S148/158
摘要： A hafnium alloy target containing either or both of Zr and Ti in a gross amount of 100 wtppm-10 wt % in Hf; wherein the average crystal grain size is 1-100 μm, the impurities of Fe, Cr and Ni are respectively 1 wtppm or less, and the habit plane ratio of the plane {002} and three planes {103}, {014} and {015} lying within 35° from {002} is 55% or greater, and the variation in the total sum of the intensity ratios of these four planes depending on locations is 20% or less. As a result, obtained is a hafnium alloy target having favorable deposition property and deposition speed, which generates few particles, and which is suitable for forming a high dielectric gate insulation film such as HfO or HfON film, and the manufacturing method thereof.
摘要翻译： 在Hf中含有总量为100重量ppm-10重量％的Zr和Ti中的任一种或两者的铪合金靶; 其平均晶粒尺寸为1-100μm，Fe，Cr和Ni的杂质分别为1wtppm以下，平面{002}和三个平面{103} {014}和{ 位于距离{002}的35°以内的倾角为55％以上，并且根据位置的这四个平面的强度比的总和的变化为20％以下。 结果，得到了具有良好的沉积性能和沉积速度的铪合金靶及其制造方法，该铪合金靶产生很少的颗粒，并且适合于形成诸如HfO或HfON膜的高介电栅极绝缘膜。
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公开(公告)号：US08062440B2
公开(公告)日：2011-11-22
申请号：US12204069
申请日：2008-09-04
CPC分类号： C22C27/00 , C23C14/3414 , H01L21/31645 , Y10S148/158
摘要： A hafnium alloy target containing either or both of Zr and Ti in a gross amount of 100 wtppm-10 wt % in Hf, wherein the average crystal grain size is 1-100 μm, the impurities of Fe, Cr and Ni are respectively 1 wtppm or less, and the habit plane ratio of the plane {002} and three planes {103}, {014} and {015} lying within 35° from {002} is 55% or greater, and the variation in the total sum of the intensity ratios of these four planes depending on locations is 20% or less. As a result, obtained is a hafnium alloy target having favorable deposition property and deposition speed, which generates few particles, and which is suitable for forming a high dielectric gate insulation film such as HfO or HfON film, and the manufacturing method thereof.
摘要翻译： 在Hf中，含有总量为100重量ppm-10重量％的Zr和Ti中的任一种或两者的铪合金靶，其中平均晶粒尺寸为1-100μm，Fe，Cr和Ni的杂质分别为1重量ppm 以下，与{002}相距在35°以内的平面{002}和三个平面{103}，{014}和{015}的习惯平面比为55％以上， 根据位置的这四个平面的强度比为20％以下。 结果，得到了具有良好的沉积性能和沉积速度的铪合金靶及其制造方法，该铪合金靶产生很少的颗粒，并且适合于形成诸如HfO或HfON膜的高介电栅极绝缘膜。
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公开(公告)号：US07459036B2
公开(公告)日：2008-12-02
申请号：US10548347
申请日：2004-01-21
IPC分类号： C23C14/34
CPC分类号： C22C27/00 , C23C14/3414 , H01L21/31645 , Y10S148/158
摘要： Provided is a hafnium alloy target containing either or both of Zr and Ti in a gross amount of 100 wtppm-10 wt % in Hf, wherein the average crystal grain size is 1-100 μm, the impurities of Fe, Cr and Ni are respectively 1 wtppm or less, and the habit plane ratio of the plane {002} and three planes {103}, {014} and {015} lying within 35° from {002} is 55% or greater, and the variation in the total sum of the intensity ratios of these four planes depending on locations is 20% or less. As a result, obtained is a hafnium alloy target having favorable deposition property and deposition speed, which generates few particles, and which is suitable for forming a high dielectric gate insulation film such as HfO or HfON film, and the manufacturing method thereof.
摘要翻译： 本发明提供一种铪合金靶，其含有Zr和Ti中的任一种或两者，其总量为100重量ppm-10重量％，其中平均晶粒尺寸为1-100微米，Fe，Cr和Ni的杂质分别为 1％以下，与{002}相差35°以内的平面{002}和3个平面{103}，{014}和{015}的习惯平面比为55％以上，总和 根据位置的这四个平面的强度比的总和为20％以下。 结果，得到了具有良好的沉积性能和沉积速度的铪合金靶及其制造方法，该铪合金靶产生很少的颗粒，并且适合于形成诸如HfO或HfON膜的高介电栅极绝缘膜。
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公开(公告)号：US08262816B2
公开(公告)日：2012-09-11
申请号：US12259396
申请日：2008-10-28
IPC分类号： C22C14/00
CPC分类号： C22C27/00 , C23C14/3414 , H01L21/31645 , Y10S148/158
摘要： A hafnium alloy target containing either or both of Zr and Ti in a gross amount of 100 wtppm-10 wt % in Hf, wherein the average crystal grain size is 1-100 μm, the impurities of Fe, Cr and Ni are respectively 1 wtppm or less, and the habit plane ratio of the plane {002} and three planes {103}, {014} and {015} lying within 35° from {002} is 55% or greater, and the variation in the total sum of the intensity ratios of these four planes depending on locations is 20% or less. As a result, obtained is a hafnium alloy target having favorable deposition property and deposition speed, which generates few particles, and which is suitable for forming a high dielectric gate insulation film such as HfO or HfON film, and the manufacturing method thereof.
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公开(公告)号：US20090000704A1
公开(公告)日：2009-01-01
申请号：US12204069
申请日：2008-09-04
CPC分类号： C22C27/00 , C23C14/3414 , H01L21/31645 , Y10S148/158
摘要： A hafnium alloy target containing either or both of Zr and Ti in a gross amount of 100 wtppm-10 wt % in Hf, wherein the average crystal grain size is 1-100 μm, the impurities of Fe, Cr and Ni are respectively 1 wtppm or less, and the habit plane ratio of the plane {002} and three planes {103}, {014} and {015} lying within 35° from {002} is 55% or greater, and the variation in the total sum of the intensity ratios of these four planes depending on locations is 20% or less. As a result, obtained is a hafnium alloy target having favorable deposition property and deposition speed, which generates few particles, and which is suitable for forming a high dielectric gate insulation film such as HfO or HfON film, and the manufacturing method thereof.
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9.发明授权Sputtering target producing few particles, backing plate or sputtering apparatus and sputtering method producing few particles 有权产生少量颗粒的溅射靶，背板或溅射装置和产生少量颗粒的溅射方法公开(公告)号：US06858116B2
公开(公告)日：2005-02-22
申请号：US10297232
申请日：2001-05-23
CPC分类号： C23C4/00 , C23C4/02 , C23C14/3414 , H01J37/3435
摘要： A sputtering target producing few particles, a backing plate or a sputtering apparatus, and a sputtering method producing few particles. An arc-spraying coating film and a plasma-spraying coating film over the former are formed on the sputtering target, a backing plate, or another surface in the sputtering apparatus, where an unwanted film might be formed. Thus a deposit is prevent from separating/flying from the target, backing plate, or another surface where an unwanted film might be formed in the sputtering apparatus.
摘要翻译： 产生少量颗粒的溅射靶，背板或溅射装置，以及几乎不产生颗粒的溅射方法。 在溅射靶，背板或溅射装置中可能形成不需要的膜的另一表面上形成有在前者上的电弧喷涂涂层膜和等离子体喷镀涂膜。 因此，防止沉积物从靶材，背板或在溅射装置中可能形成不想要的膜的另一表面分离/飞散。
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10.发明授权Barrier film for flexible copper substrate and sputtering target for forming barrier film 有权用于柔性铜基板的阻挡膜和用于形成阻挡膜的溅射靶公开(公告)号：US08318314B2
公开(公告)日：2012-11-27
申请号：US12640075
申请日：2009-12-17
CPC分类号： H05K3/388 , C22C19/07 , C23C14/205 , C23C14/3414 , H05K1/0346 , H05K1/0393 , Y10T428/12569 , Y10T428/12715 , Y10T428/12847 , Y10T428/1291 , Y10T428/31681 , Y10T428/31721
摘要： A barrier film for a flexible copper substrate comprising a Co—Cr alloy film containing 5 to 30 wt % of Cr and a balance of unavoidable impurities and Co is provided. The barrier film has a thickness of 3 to 150 nm and a film thickness uniformity of 10% or less at 1σ. A sputtering target for forming a barrier film comprising a Co—Cr alloy containing 5 to 30 wt % of Cr and a balance of unavoidable impurities and Co is also provided. The relative magnetic permeability in the in-plane direction of the sputtered face of the target is 100 or less. The barrier film for a flexible copper substrate and the sputtering target for forming such barrier film have a film thickness that is thin enough to prevent film peeling and inhibiting the diffusion of copper to a resin film such as polyimide, is capable of obtaining a sufficient barrier effect even in a minute wiring pitch and has barrier characteristics that will not change even when the temperature rises due to heat treatment or the like.
摘要翻译： 提供了一种用于柔性铜基材的阻挡膜，其包含含有5至30重量％的Cr的Co-Cr合金膜和余量的不可避免的杂质和Co。 阻挡膜的厚度为3〜150nm，膜厚均匀度为1％以下。 还提供了用于形成阻挡膜的溅射靶，该阻挡膜包含含有5〜30重量％的Cr的Co-Cr合金和余量的不可避免的杂质和Co。 靶的溅射面的面内方向的相对磁导率为100以下。 用于柔性铜基板的阻挡膜和用于形成这种阻挡膜的溅射靶具有足够薄以防止膜剥离并且抑制铜扩散到诸如聚酰亚胺等树脂膜的扩散的膜厚，能够获得足够的屏障 即使在微小的布线间距中也起作用，并且具有即使当由于热处理等导致的温度上升时也不会改变的阻挡特性。
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