摘要:
An efficient process is provided in which sulfur is reacted with carbon monoxide in a liquid phase to produce carbonyl sulfide. In the presence of a base catalyst, carbon monoxide is continuously introduced into a reactor in which a liquid reaction mixture obtained by dissolving or suspending sulfur in an organic solvent is held, and the sulfur is reacted with the carbon monoxide at a pressure of 0.2-3.0 MPa and a temperature of 40-120° C. to yield carbonyl sulfide. The gaseous-phase part is withdrawn from the reactor, and the withdrawn gaseous-phase part is cooled with a cooler to condense the carbonyl sulfide contained in the gaseous-phase part. The condensed carbonyl sulfide is continuously withdrawn, and the gas that has not been condensed with the cooler is returned to the reactor. Thus, carbonyl sulfide is continuously produced.
摘要:
Disclosed is a process for producing hexafluoro-1,3-butadiene, which is used for an etching gas capable of being used in fine processing for semiconductors, safely in industrialization and at low cost economically. Specifically disclosed is a process for producing hexafluoro-1,3-butadiene comprises (1) a step comprising allowing a compound having four carbon atoms each which bonds to an atom selected from the group consisting of a bromine atom, an iodine atom and a chlorine atom, to react with a fluorine gas in the presence of a diluting gas in a gas phase, thereby preparing a mixture containing a product (A), and (2) a step comprising eliminating halogens excluding a fluorine atom with a metal from the product (A) prepared in the step (1) in the presence of a solvent, thereby preparing a mixture containing hexafluoro-1,3-butadiene.
摘要:
A method for producing nitrogen trifluoride related to the present invention is characterized in that a fluorine gas and an ammonia gas are fed into a tubular reactor and are reacted with each other in the presence of a diluting gas in a gaseous phase under the condition of no catalyst to produce a gas product mainly composed of nitrogen trifluoride and a solid product mainly composed of ammonium fluoride and/or acidic ammonium fluoride, and then the solid product attached to an inner wall of the tubular reactor is removed by means of a device for removing the solid product, which device is mounted to the tubular reactor.
摘要:
A process for production of high-purity hexafluoroethane, wherein a mixed gas containing hexafluoroethane and chlorotrifluoromethane is reacted with hydrogen fluoride in a gas phase in the presence of a fluorination catalyst at 200–450° C., for fluorination of the chlorotrifluoromethane, or wherein pentafluoroethane containing chlorine compounds with 1–3 carbon atoms is reacted with hydrogen in a gas phase in the presence of a hydrogenation catalyst at 150–400° C., and the product is then reacted with fluorine in a gas phase in the presence of a diluent gas.
摘要:
The process for producing perfluorocarbons according to the present invention is characterized in that in the production of a perfluorocarbon by contacting an organic compound with a fluorine gas, the organic compound is contacted with the fluorine gas at a temperature of from 200 to 500° C. and the content of an oxygen gas within the reaction system is controlled to 2% by volume or less based on the gas components in the reaction starting material, whereby a perfluorocarbon reduced in the content of impurities is produced. According to the process for producing perfluorocarbons of the present invention, high-purity perfluorocarbons extremely suppressed in the production of impurities such as an oxygen-containing compound can be obtained. The perfluorocarbons obtained by the production process of the present invention contain substantially no oxygen-containing compound and, therefore, can be effectively used as an etching or cleaning gas for use in a process for producing a semiconductor device.
摘要:
A process for production of high-purity hexafluoroethane, wherein a mixed gas containing hexafluoroethane and chlorotrifluoromethane is reacted with hydrogen fluoride in a gas phase in the presence of a fluorination catalyst at 200-450° C., for fluorination of the chlorotrifluoromethane, or wherein pentafluoroethane containing chlorine compounds with 1-3 carbon atoms is reacted with hydrogen in a gas phase in the presence of a hydrogenation catalyst at 150-400° C., and the product is then reacted with fluorine in a gas phase in the presence of a diluent gas.
摘要:
F2 gas is reacted with NH3 gas in a gaseous phase at 80° C. or less in the presence of a diluting gas to produce NF3. Thus, NF3 is produced with good safety, efficiency and profitability.
摘要:
A process comprising bringing crude pentafluoroethane containing at least one compound selected from the group consisting of hydrofluorocarbons containing one carbon atom, hydrochlorofluorocarbons containing one carbon atom and hydrochlorocarbons containing one carbon atom, into contact with an adsorbent comprising a zeolite having an average pore size of 3 to 6 Å and a silica/aluminum ratio of 2.0 or less and/or a carbonaceous adsorbent having an average pore size of 3.5 to 6 Å, to reduce the content of the compound. The purified gas can be used as a low temperature refrigerant or an etching gas.
摘要:
The present invention intends to provide a process for producing CF3CF3 with good profitability using CF3CHF2 containing a compound having chlorine atom within the molecule, and use thereof. In the process of the present invention, a gas mixture containing CF3CHF2 and a compound having chlorine atom within the molecule is reacted with hydrogen fluoride in the presence of a fluorination catalyst, thereby converting CClF2CF3 as a main impurity into CF3CF3, and CF3CHF2 containing CF3CF3 is reacted with fluorine gas in the gaseous phase in the presence of a diluting gas.
摘要:
A method for decomposing a perfluorocarbon in the presence of water vapor or water vapor and molecular oxygen in gas phase, in which a catalyst of a phosphate comprising at least one element selected from the group consisting of aluminum, boron, alkali earth metal, titanium, zirconium, lanthanum, cerium, yttrium, rare earth metal, vanadium, niobium, chromium, manganese, iron, cobalt and nickel, and phosphorus oxide, is used.