公开(公告)号：US07070903B2

公开(公告)日：2006-07-04

申请号：US10131594

申请日：2002-04-25

申请人： Yasuharu Suda ,  Hiroshi Tonegawa ,  Minoru Sueda ,  Hideaki Sakurai ,  Yoshiyuki Tasaka ,  Yasuhiro Akita ,  Toyoshi Ohto ,  Kimihiko Ohya ,  Shuuichi Nagahata

发明人： Yasuharu Suda ,  Hiroshi Tonegawa ,  Minoru Sueda ,  Hideaki Sakurai ,  Yoshiyuki Tasaka ,  Yasuhiro Akita ,  Toyoshi Ohto ,  Kimihiko Ohya ,  Shuuichi Nagahata

IPC分类号： G03F7/04

CPC分类号： B41N3/006 ,  B41C1/1025 ,  B41C2201/04 ,  B41C2201/10 ,  B41C2201/14 ,  B41C2210/04 ,  B41C2210/08 ,  B41C2210/24 ,  B41C2210/262 ,  B41C2210/266 ,  B41P2227/70 ,  Y10S430/165 ,  Y10T428/1393 ,  Y10T428/254 ,  Y10T428/31931 ,  Y10T428/31935

摘要： Disclosed are a printing plate precursor, a fabrication process of the printing plate precursor, a fabrication process of a printing plate, a regeneration process of the printing plate, a printing press, and a coating formulation for the printing plate precursor. According to the present invention, a printing plate can be fabricated directly from digital data, and sufficient image quality can be obtained without a developing step, i.e., a developer. To permit repeated use of the precursor, the precursor has a surface, which contains a photocatalyst and is capable of showing hydrophilicity when exposed to activating light having energy higher than band gap energy of the photocatalyst. A coating formulation—which comprises fine particles of a thermoplastic resin having both a property that the particles unite to the surface when heated and a property that the particles decompose under action of the photocatalyst when exposed to activating light having energy higher than band gap energy of the photocatalyst—is applied as a hydrophobizing agent onto the surface. At least a part of the surface of the precursor is heated such that the fine particles applied on the part of the surface are fixed to form a hydrophobic image area. The fine particles applied on the remaining part of the surface with the image area formed thereon are then removed.

公开(公告)号：US20050230830A1

公开(公告)日：2005-10-20

申请号：US11132223

申请日：2005-05-19

申请人： Hitoshi Sakamoto ,  Naoki Yahata ,  Toshihiko Nishimori ,  Yoshiyuki Ooba ,  Hiroshi Tonegawa ,  Ikumasa Koshiro ,  Yuzuru Ogura

发明人： Hitoshi Sakamoto ,  Naoki Yahata ,  Toshihiko Nishimori ,  Yoshiyuki Ooba ,  Hiroshi Tonegawa ,  Ikumasa Koshiro ,  Yuzuru Ogura

IPC分类号： C23C16/08 ,  C23C16/14 ,  C23C16/44 ,  C23C16/448 ,  H01J37/32 ,  H01L21/285 ,  H01L21/44 ,  H01L21/768

CPC分类号： H01J37/321 ,  C23C16/08 ,  C23C16/14 ,  C23C16/4488 ,  H01J37/32357 ,  H01J2237/3326 ,  H01L21/28556 ,  H01L21/76879

摘要： In a metal film production apparatus, a copper plate member is etched with a Cl2 gas plasma within a chamber to form a precursor comprising a Cu component and a Cl2 gas; and the temperatures of the copper plate member and a substrate and a difference between their temperatures are controlled as predetermined, to deposit the Cu component of the precursor on the substrate, thereby forming a film of Cu. In this apparatus, Cl* is formed in an excitation chamber of a passage communicating with the interior of the chamber to flow a Cl2 gas, and the Cl* is supplied into the chamber to withdraw a Cl2 gas from the precursor adsorbed onto the substrate, thereby promoting a Cu film formation reaction. The apparatus has a high film formation speed, can use an inexpensive starting material, and can minimize impurities remaining in the film.

公开(公告)号：US20090233442A1

公开(公告)日：2009-09-17

申请号：US12471743

申请日：2009-05-26

申请人： Hitoshi Sakamoto ,  Naoki Yahata ,  Toshihiko Nishimori ,  Yoshiyuki Ooba ,  Hiroshi Tonegawa ,  Ikumasa Koshiro ,  Yuzuru Ogura

发明人： Hitoshi Sakamoto ,  Naoki Yahata ,  Toshihiko Nishimori ,  Yoshiyuki Ooba ,  Hiroshi Tonegawa ,  Ikumasa Koshiro ,  Yuzuru Ogura

IPC分类号： H01L21/3205

CPC分类号： H01J37/321 ,  C23C16/08 ,  C23C16/14 ,  C23C16/4488 ,  H01J37/32357 ,  H01J2237/3326 ,  H01L21/28556 ,  H01L21/76879

摘要： In a metal film production apparatus, a copper plate member is etched with a Cl2 gas plasma within a chamber to form a precursor comprising a Cu component and a Cl2 gas; and the temperatures of the copper plate member and a substrate and a difference between their temperatures are controlled as predetermined, to deposit the Cu component of the precursor on the substrate, thereby forming a film of Cu. In this apparatus, Cl* is formed in an excitation chamber of a passage communicating with the interior of the chamber to flow a Cl2 gas, and the Cl* is supplied into the chamber to withdraw a Cl2 gas from the precursor adsorbed onto the substrate, thereby promoting a Cu film formation reaction. The apparatus has a high film formation speed, can use an inexpensive starting material, and can minimize impurities remaining in the film.

摘要翻译： 在金属膜制造装置中，在室内用Cl 2气体等离子体蚀刻铜板构件，形成包含Cu成分和Cl 2气体的前体; 并且将铜板构件和基板的温度和它们的温度之间的差异预先控制，以将前体的Cu组分沉积在基板上，从而形成Cu膜。 在该装置中，Cl *形成在与腔室内部连通的通道的激励室中以流过Cl 2气体，并且将Cl *供应到室中以从吸附到基板上的前体中抽出Cl 2气体， 从而促进Cu成膜反应。 该设备具有高的成膜速度，可以使用廉价的起始材料，并且可以最小化残留在膜中的杂质。

公开(公告)号：US5262091A

公开(公告)日：1993-11-16

申请号：US886189

申请日：1992-05-21

申请人： Tadashi Narabayashi ,  Hiroshi Miyano ,  Osamu Ozaki ,  Wataru Mizumachi ,  Akira Tanabe ,  Akio Shioiri ,  Hiroshi Tonegawa ,  Takenori Ishiyama

发明人： Tadashi Narabayashi ,  Hiroshi Miyano ,  Osamu Ozaki ,  Wataru Mizumachi ,  Akira Tanabe ,  Akio Shioiri ,  Hiroshi Tonegawa ,  Takenori Ishiyama

IPC分类号： F04F5/46 ,  F04F5/50 ,  F04F5/54 ,  F22D11/02 ,  G21C1/08 ,  G21C15/18 ,  B01F3/04

CPC分类号： F04F5/54 ,  F04F5/461 ,  F04F5/50 ,  F22D11/02 ,  G21C15/18 ,  G21C1/084 ,  G21C2015/185 ,  G21Y2002/206 ,  G21Y2004/304 ,  Y02E30/40 ,  Y10S261/13 ,  Y10S261/76 ,  Y10S261/78

摘要： A steam injector system comprises a plurality of steam injectors each being provided with with a check valve adapted for water supply, a check valve adapted for steam supply, a check valve adapted for overflow and a check valve adapted for discharge and the respective water check valves, steam check valves, overflow check valves and discharge check valves are connected. In another aspect, a steam injector system comprises a plurality of first to last stage steam injectors arranged in series with each other, the last stage steam injector being provided with a relief valve disposed at a last stage overflow drain port, and a pressure pulsation absorbing device is disposed at least between the last stage overflow drain valve and the relief valve. A steam injector of an improved structure comprises an outer casing, a water nozzle disposed in the casing so as to extend axially therein, a central steam nozzle disposed inside the water nozzle coaxially therewith, a steam-water mixing nozzle disposed on a downstream side of the water nozzle and the central steam nozzle, and a peripheral steam nozzle mounted to the casing at a portion to supply steam from an outside into the steam-water mixing nozzle, wherein the steam is supplied so as to flow inside and outside the water.

公开(公告)号：US20100040802A1

公开(公告)日：2010-02-18

申请号：US12582912

申请日：2009-10-21

申请人： Hitoshi Sakamoto ,  Naoki Yahata ,  Toshihiko Nishimori ,  Yoshiyuki Ooba ,  Hiroshi Tonegawa ,  Ikumasa Koshiro ,  Yuzuru Ogura

发明人： Hitoshi Sakamoto ,  Naoki Yahata ,  Toshihiko Nishimori ,  Yoshiyuki Ooba ,  Hiroshi Tonegawa ,  Ikumasa Koshiro ,  Yuzuru Ogura

IPC分类号： H05H1/24

CPC分类号： H01J37/321 ,  C23C16/08 ,  C23C16/14 ,  C23C16/4488 ,  H01J37/32357 ,  H01J2237/3326 ,  H01L21/28556 ,  H01L21/76879

摘要： In a metal film production apparatus, a copper plate member is etched with a Cl2 gas plasma within a chamber to form a precursor comprising a Cu component and a Cl2 gas; and the temperatures of the copper plate member and a substrate and a difference between their temperatures are controlled as predetermined, to deposit the Cu component of the precursor on the substrate, thereby forming a film of Cu. In this apparatus, Cl* is formed in an excitation chamber of a passage communicating with the interior of the chamber to flow a Cl2 gas, and the Cl* is supplied into the chamber to withdraw a Cl2 gas from the precursor adsorbed onto the substrate, thereby promoting a Cu film formation reaction. The apparatus has a high film formation speed, can use an inexpensive starting material, and can minimize impurities remaining in the film.

摘要翻译： 在金属膜制造装置中，在室内用Cl 2气体等离子体蚀刻铜板构件，形成包含Cu成分和Cl 2气体的前体; 并且将铜板构件和基板的温度和它们的温度之间的差异预先控制，以将前体的Cu组分沉积在基板上，从而形成Cu膜。 在该装置中，Cl *形成在与腔室内部连通的通道的激励室中以流过Cl 2气体，并且将Cl *供应到室中以从吸附到基板上的前体中抽出Cl 2气体， 从而促进Cu成膜反应。 该设备具有高的成膜速度，可以使用廉价的起始材料，并且可以最小化残留在膜中的杂质。

公开(公告)号：US07208421B2

公开(公告)日：2007-04-24

申请号：US10384932

申请日：2003-03-07

申请人： Hitoshi Sakamoto ,  Naoki Yahata ,  Toshihiko Nishimori ,  Yoshiyuki Ooba ,  Hiroshi Tonegawa ,  Ikumasa Koshiro ,  Yuzuru Ogura

发明人： Hitoshi Sakamoto ,  Naoki Yahata ,  Toshihiko Nishimori ,  Yoshiyuki Ooba ,  Hiroshi Tonegawa ,  Ikumasa Koshiro ,  Yuzuru Ogura

IPC分类号： H01L21/302

CPC分类号： H01J37/321 ,  C23C16/08 ,  C23C16/14 ,  C23C16/4488 ,  H01J37/32357 ,  H01J2237/3326 ,  H01L21/28556 ,  H01L21/76879

摘要： In a metal film production apparatus, a copper plate member is etched with a Cl2 gas plasma within a chamber to form a precursor comprising a Cu component and a Cl2 gas; and the temperatures of the copper plate member and a substrate and a difference between their temperatures are controlled as predetermined, to deposit the Cu component of the precursor on the substrate, thereby forming a film of Cu. In this apparatus, Cl* is formed in an excitation chamber of a passage communicating with the interior of the chamber to flow a Cl2 gas, and the Cl* is supplied into the chamber to withdraw a Cl2 gas from the precursor adsorbed onto the substrate, thereby promoting a Cu film formation reaction. The apparatus has a high film formation speed, can use an inexpensive starting material, and can minimize impurities remaining in the film.

摘要翻译： 在金属膜制造装置中，在室内用Cl 2 O 2气体等离子体蚀刻铜板构件，以形成包含Cu成分和Cl 2/2气体的前体; 并且将铜板构件和基板的温度和它们的温度之间的差异预先控制，以将前体的Cu组分沉积在基板上，从而形成Cu膜。 在该装置中，Cl *形成在与腔室内部连通的通道的激励室中，以流过Cl 2气体，并且将Cl *供应到室中以抽出Cl < 从吸附在基材上的前驱物中吸收气体，从而促进Cu成膜反应。 该设备具有高的成膜速度，可以使用廉价的起始材料，并且可以最小化残留在膜中的杂质。

公开(公告)号：US20090311866A1

公开(公告)日：2009-12-17

申请号：US12545498

申请日：2009-08-21

申请人： Hitoshi Sakamoto ,  Naoki Yahata ,  Toshihiko Nishimori ,  Yoshiyuki Ooba ,  Hiroshi Tonegawa ,  Ikumasa Koshiro ,  Yuzuru Ogura

发明人： Hitoshi Sakamoto ,  Naoki Yahata ,  Toshihiko Nishimori ,  Yoshiyuki Ooba ,  Hiroshi Tonegawa ,  Ikumasa Koshiro ,  Yuzuru Ogura

IPC分类号： H01L21/465

CPC分类号： H01J37/321 ,  C23C16/08 ,  C23C16/14 ,  C23C16/4488 ,  H01J37/32357 ,  H01J2237/3326 ,  H01L21/28556 ,  H01L21/76879

摘要： In a metal film production apparatus, a copper plate member is etched with a Cl2 gas plasma within a chamber to form a precursor comprising a Cu component and a Cl2 gas; and the temperatures of the copper plate member and a substrate and a difference between their temperatures are controlled as predetermined, to deposit the Cu component of the precursor on the substrate, thereby forming a film of Cu. In this apparatus, Cl* is formed in an excitation chamber of a passage communicating with the interior of the chamber to flow a Cl2 gas, and the Cl* is supplied into the chamber to withdraw a Cl2 gas from the precursor absorbed onto the substrate, thereby promoting a Cu film formation reaction. The apparatus has a high film formation speed, can use an inexpensive starting material, and can minimize impurities remaining in the film.

摘要翻译： 在金属膜制造装置中，在室内用Cl 2气体等离子体蚀刻铜板构件，形成包含Cu成分和Cl 2气体的前体; 并且将铜板构件和基板的温度和它们的温度之间的差异预先控制，以将前体的Cu组分沉积在基板上，从而形成Cu膜。 在该装置中，Cl *形成在与腔室内部连通的通道的激励室中以流过Cl 2气体，并且将Cl *供应到室中以从吸收到衬底上的前体中抽出Cl 2气体， 从而促进Cu成膜反应。 该设备具有高的成膜速度，可以使用廉价的起始材料，并且可以最小化残留在膜中的杂质。

公开(公告)号：US07262500B2

公开(公告)日：2007-08-28

申请号：US11132223

申请日：2005-05-19

申请人： Hitoshi Sakamoto ,  Naoki Yahata ,  Toshihiko Nishimori ,  Yoshiyuki Ooba ,  Hiroshi Tonegawa ,  Ikumasa Koshiro ,  Yuzuru Ogura

发明人： Hitoshi Sakamoto ,  Naoki Yahata ,  Toshihiko Nishimori ,  Yoshiyuki Ooba ,  Hiroshi Tonegawa ,  Ikumasa Koshiro ,  Yuzuru Ogura

IPC分类号： H01L21/44 ,  H01L21/02 ,  H01L23/48

CPC分类号： H01J37/321 ,  C23C16/08 ,  C23C16/14 ,  C23C16/4488 ,  H01J37/32357 ,  H01J2237/3326 ,  H01L21/28556 ,  H01L21/76879

摘要： In a metal film production apparatus, a copper plate member is etched with a Cl2 gas plasma within a chamber to form a precursor comprising a Cu component and a Cl2 gas; and the temperatures of the copper plate member and a substrate and a difference between their temperatures are controlled as predetermined, to deposit the Cu component of the precursor on the substrate, thereby forming a film of Cu. In this apparatus, Cl* is formed in an excitation chamber of a passage communicating with the interior of the chamber to flow a Cl2 gas, and the Cl* is supplied into the chamber to withdraw a Cl2 gas from the precursor adsorbed onto the substrate, thereby promoting a Cu film formation reaction. The apparatus has a high film formation speed, can use an inexpensive starting material, and can minimize impurities remaining in the film.

摘要翻译： 在金属膜制造装置中，在室内用Cl 2 O 2气体等离子体蚀刻铜板构件，以形成包含Cu成分和Cl 2/2气体的前体; 并且将铜板构件和基板的温度和它们的温度之间的差异预先控制，以将前体的Cu组分沉积在基板上，从而形成Cu膜。 在该装置中，Cl *形成在与腔室内部连通的通道的激励室中，以流过Cl 2气体，并且将Cl *供应到室中以抽出Cl < 从吸附在基材上的前驱物中吸收气体，从而促进Cu成膜反应。 该设备具有高的成膜速度，可以使用廉价的起始材料，并且可以最小化残留在膜中的杂质。

公开(公告)号：US20060144271A1

公开(公告)日：2006-07-06

申请号：US11362869

申请日：2006-02-28

申请人： Yasuharu Suda ,  Hiroshi Tonegawa ,  Minoru Sueda ,  Hideaki Sakurai ,  Yoshiyuki Tasaka ,  Yosuhiro Akita ,  Toyoshi Ohto ,  Kimihiko Ohya ,  Shuuichi Nagahata

发明人： Yasuharu Suda ,  Hiroshi Tonegawa ,  Minoru Sueda ,  Hideaki Sakurai ,  Yoshiyuki Tasaka ,  Yosuhiro Akita ,  Toyoshi Ohto ,  Kimihiko Ohya ,  Shuuichi Nagahata

IPC分类号： B41N1/00

CPC分类号： B41N3/006 ,  B41C1/1025 ,  B41C2201/04 ,  B41C2201/10 ,  B41C2201/14 ,  B41C2210/04 ,  B41C2210/08 ,  B41C2210/24 ,  B41C2210/262 ,  B41C2210/266 ,  B41P2227/70 ,  Y10S430/165 ,  Y10T428/1393 ,  Y10T428/254 ,  Y10T428/31931 ,  Y10T428/31935

摘要： Disclosed are a printing plate precursor, a fabrication process of the printing plate precursor, a fabrication process of a printing plate, a regeneration process of the printing plate, a printing press, and a coating formulation for the printing plate precursor. According to the present invention, a printing plate can be fabricated directly from digital data, and sufficient image quality can be obtained without a developing step, i.e., a developer. To permit repeated use of the precursor, the precursor has a surface, which contains a photocatalyst and is capable of showing hydrophilicity when exposed to activating light having energy higher than band gap energy of the photocatalyst. A coating formulation—which comprises fine particles of a thermoplastic resin having both a property that the particles unite to the surface when heated and a property that the particles decompose under action of the photocatalyst when exposed to activating light having energy higher than band gap energy of the photocatalyst—is applied as a hydrophobizing agent onto the surface. At least apart of the surface of the precursor is heated such that the fine particles applied on the part of the surface are fixed to form a hydrophobic image area. The fine particles applied on the remaining part of the surface with the image area formed thereon are then removed.

摘要翻译： 公开了印版前体，印版前体的制造方法，印版的制造方法，印版的再生方法，印刷机和印刷版前体用涂料配方。 根据本发明，可以直接从数字数据制造印版，并且可以在没有显影步骤即显影剂的情况下获得足够的图像质量。 为了允许反复使用前体，前体具有含有光催化剂的表面，并且当暴露于具有高于光催化剂的带隙能量的能量的活化光时能够显示出亲水性。 一种涂料配方，其包含具有颗粒在加热时与表面结合的性质的热塑性树脂的细颗粒，以及当光催化剂的作用下当粒子分解的能量高于带隙能量的活化光时， 光催化剂作为疏水化剂施加到表面上。 至少将前体的表面分开加热，使得施加在表面部分上的细颗粒被固定以形成疏水图像区域。 然后除去施加在其上形成有图像区域的表面的剩余部分上的细颗粒。

公开(公告)号：US20050217579A1

公开(公告)日：2005-10-06

申请号：US11132222

申请日：2005-05-19

申请人： Hitoshi Sakamoto ,  Naoki Yahata ,  Toshihiko Nishimori ,  Yoshiyuki Coba ,  Hiroshi Tonegawa ,  Ikumasa Koshiro ,  Yuzuru Ogura

发明人： Hitoshi Sakamoto ,  Naoki Yahata ,  Toshihiko Nishimori ,  Yoshiyuki Coba ,  Hiroshi Tonegawa ,  Ikumasa Koshiro ,  Yuzuru Ogura

IPC分类号： C23C16/08 ,  C23C16/14 ,  C23C16/44 ,  C23C16/448 ,  H01J37/32 ,  H01L21/285 ,  H01L21/44 ,  H01L21/768

CPC分类号： H01J37/321 ,  C23C16/08 ,  C23C16/14 ,  C23C16/4488 ,  H01J37/32357 ,  H01J2237/3326 ,  H01L21/28556 ,  H01L21/76879

摘要： In a metal film production apparatus, a copper plate member is etched with a Cl2 gas plasma within a chamber to form a precursor comprising a Cu component and a Cl2 gas; and the temperatures of the copper plate member and a substrate and a difference between their temperatures are controlled as predetermined, to deposit the Cu component of the precursor on the substrate, thereby forming a film of Cu. In this apparatus, Cl* is formed in an excitation chamber of a passage communicating with the interior of the chamber to flow a Cl2 gas, and the Cl* is supplied into the chamber to withdraw a Cl2 gas from the precursor adsorbed onto the substrate, thereby promoting a Cu film formation reaction. The apparatus has a high film formation speed, can use an inexpensive starting material, and can minimize impurities remaining in the film.

摘要翻译： 在金属膜制造装置中，在室内用C 2 H 2气体等离子体蚀刻铜板构件，以形成包含Cu成分和Cl 2/2气体的前体; 并且将铜板构件和基板的温度和它们的温度之间的差异预先控制，以将前体的Cu组分沉积在基板上，从而形成Cu膜。 在该装置中，Cl *形成在与腔室内部连通的通道的激励室中，以流过Cl 2气体，并且将Cl *供应到室中以抽出Cl < 从吸附在基材上的前驱物中吸收气体，从而促进Cu成膜反应。 该设备具有高的成膜速度，可以使用廉价的起始材料，并且可以最小化残留在膜中的杂质。