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    PLASMA-CHEMICAL COATING APPARATUS
    2.
    发明申请
    PLASMA-CHEMICAL COATING APPARATUS 审中-公开
    等离子体涂料装置

    公开(公告)号：US20160211122A1

    公开(公告)日：2016-07-21

    申请号：US14906027

    申请日：2014-07-11

    申请人： W & L COATING SYSTEMS GMBH

    发明人： Michael LIEHR ,  Hans-Dieter WURCZINGER

    IPC分类号： H01J37/32

    CPC分类号： H01J37/32899 ,  C23C14/35 ,  C23C16/44 ,  C23C16/452 ,  C23C16/45578 ,  C23C16/511 ,  C23C16/515 ,  H01J37/3222 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32669 ,  H01J37/32798 ,  H01J37/32862 ,  H01J37/32889 ,  H01J2237/327 ,  H01J2237/3321 ,  H01J2237/3326

    摘要： In a known plasma-chemical coating apparatus, a plasma chamber is provided within which at least one linear antenna is arranged for producing a plasma by means of electromagnetic power, in which a supply for a carrier gas terminates and which comprises a plasma exit opening in the direction of a treatment chamber for a plasma-assisted modification of a substrate. Starting from this, to achieve cleaning cycles as in coating apparatuses with comparatively slow coating processes, it is suggested according to the invention that the plasma exit opening is configured as an elongated narrowing and defined preferably on both sides by cylinders which extend in parallel with each other and are rotatable about their cylinder axis, and that a cleaning zone is respectively provided for each of the cylinders, into which an area of the outer surface of the respective cylinder which is to be cleaned can be introduced by rotation about the cylinder axis.

    摘要翻译： 在已知的等离子体化学涂覆装置中，提供等离子体室，其中至少一个线性天线被布置用于通过电磁功率产生等离子体，其中载气的供应终止，并且包括等离子体出口 用于等离子体辅助改性基板的处理室的方向。 从这开始，为了实现具有比较缓慢的涂布工艺的涂布设备的清洁循环，根据本发明建议等离子体出口被构造为细长变窄，并且优选地在两侧通过与每个 并且可以围绕其圆柱体轴线旋转，并且为每个气缸分别设置清洁区域，通过围绕气缸轴线的旋转可以将要清洁的相应气缸的外表面的一个区域引入该清洁区域。

    Plasma Deposition of Amorphous Semiconductors at Microwave Frequencies
    3.
    发明申请
    Plasma Deposition of Amorphous Semiconductors at Microwave Frequencies 失效
    微波频率下非晶半导体的等离子体沉积

    公开(公告)号：US20120040513A1

    公开(公告)日：2012-02-16

    申请号：US12983203

    申请日：2010-12-31

    申请人： Stanford R. Ovshinsky

    发明人： Stanford R. Ovshinsky

    IPC分类号： H01L21/20 ,  H01B1/04

    CPC分类号： H01L31/20 ,  H01J37/32192 ,  H01J37/32229 ,  H01J37/32357 ,  H01J37/3244 ,  H01J2237/3326 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/0262 ,  H01L31/035218 ,  H01L31/03767 ,  H01L31/1804 ,  H01L31/202 ,  Y02E10/547 ,  Y02P70/521

    摘要： Apparatus and method for plasma deposition of thin film photovoltaic materials at microwave frequencies. The apparatus avoids unintended deposition on windows or other microwave transmission elements that couple microwave energy to deposition species. The apparatus includes a microwave applicator with one or more conduits passing therethrough that carry deposition species. The applicator transfers microwave energy to the deposition species to activate or energize them to a reactive state. The conduits physically isolate deposition species that would react or otherwise combine to form a thin film material at the point of microwave power transfer and deliver the microwave-excited species to a deposition chamber. One or more supplemental material streams may be delivered directly to the deposition chamber without passing through the microwave applicator and may combine with deposition species exiting the one or more conduits to form a thin film material. Precursors for the microwave-excited deposition species include fluorinated forms of silicon. Precursors delivered as supplemental material streams include hydrogenated forms of silicon. The invention allows for the ultrafast formation of silicon-containing amorphous semiconductors that exhibit high mobility, low porosity, little or no Staebler-Wronski degradation, and low defect concentration.

    摘要翻译： 微波等离子体沉积薄膜光伏材料的设备和方法。 该装置避免了将微波能量耦合到沉积物质的窗户或其他微波传输元件上的非预期沉积。 该装置包括具有一个或多个通过其中的导管携带沉积物质的微波施加器。 施加器将微波能量传递到沉积物质以激活或激发它们至反应状态。 导管物理地隔离将在微波功率传递的点反应或以其它方式组合以形成薄膜材料的沉积物质，并将微波激发的物质输送到沉积室。 一个或多个补充材料流可以直接递送到沉积室而不通过微波施加器，并且可以与离开一个或多个管道的沉积物质组合以形成薄膜材料。 用于微波激发沉积物质的前体包括氟化形式的硅。 作为补充材料流输送的前体包括氢化形式的硅。 本发明允许超快速地形成显示高迁移率，低孔隙率，很少或没有Staebler-Wronski降解和低缺陷浓度的含硅非晶半导体。

    Method and apparatus for production of metal film or the like
    4.
    发明授权
    Method and apparatus for production of metal film or the like 有权
    金属膜等的制造方法和装置

    公开(公告)号：US07923374B2

    公开(公告)日：2011-04-12

    申请号：US12471743

    申请日：2009-05-26

    申请人： Hitoshi Sakamoto ,  Naoki Yahata ,  Toshihiko Nishimori ,  Yoshiyuki Ooba ,  Hiroshi Tonegawa ,  Ikumasa Koshiro ,  Yuzuru Ogura

    发明人： Hitoshi Sakamoto ,  Naoki Yahata ,  Toshihiko Nishimori ,  Yoshiyuki Ooba ,  Hiroshi Tonegawa ,  Ikumasa Koshiro ,  Yuzuru Ogura

    IPC分类号： H01L21/302

    CPC分类号： H01J37/321 ,  C23C16/08 ,  C23C16/14 ,  C23C16/4488 ,  H01J37/32357 ,  H01J2237/3326 ,  H01L21/28556 ,  H01L21/76879

    摘要： In a metal film production apparatus, a copper plate member is etched with a Cl2 gas plasma within a chamber to form a precursor comprising a Cu component and a Cl2 gas; and the temperatures of the copper plate member and a substrate and a difference between their temperatures are controlled as predetermined, to deposit the Cu component of the precursor on the substrate, thereby forming a film of Cu. In this apparatus, Cl* is formed in an excitation chamber of a passage communicating with the interior of the chamber to flow a Cl2 gas, and the Cl* is supplied into the chamber to withdraw a Cl2 gas from the precursor adsorbed onto the substrate, thereby promoting a Cu film formation reaction. The apparatus has a high film formation speed, can use an inexpensive starting material, and can minimize impurities remaining in the film.

    摘要翻译： 在金属膜制造装置中，在室内用Cl 2气体等离子体蚀刻铜板构件，形成包含Cu成分和Cl 2气体的前体; 并且将铜板构件和基板的温度和它们的温度之间的差异预先控制，以将前体的Cu组分沉积在基板上，从而形成Cu膜。 在该装置中，Cl *形成在与腔室内部连通的通道的激励室中以流过Cl 2气体，并且将Cl *供应到室中以从吸附到基板上的前体中抽出Cl 2气体， 从而促进Cu成膜反应。 该设备具有高的成膜速度，可以使用廉价的起始材料，并且可以最小化残留在膜中的杂质。

    PLASMA PROCESSING DEVICE AND PLASMA PROCESSING METHOD
    6.
    发明申请
    PLASMA PROCESSING DEVICE AND PLASMA PROCESSING METHOD 审中-公开
    等离子体处理装置和等离子体处理方法

    公开(公告)号：US20140335288A1

    公开(公告)日：2014-11-13

    申请号：US14370299

    申请日：2012-02-24

    申请人： Masaki Hirayama

    发明人： Masaki Hirayama

    IPC分类号： H01J37/32

    CPC分类号： H01J37/32568 ,  H01J37/32082 ,  H01J37/32229 ,  H01J37/32532 ,  H01J37/32577 ,  H01J2237/3321 ,  H01J2237/3326

    摘要： There is provided a plasma processing apparatus which can improve density uniformity of plasma excited by a high frequency wave as in the VHF frequency band and reduce production costs by downsizing for a substrate having a large size. The plasma processing apparatus includes a waveguide member defining a waveguide, first and second electrodes disposed so as to face a plasma formation space, defining the waveguide in cooperation with the waveguide member, and electrically connected to the waveguide member; a coaxial tube supplying electromagnetic energy into the waveguide; a dielectric plate disposed in the waveguide and extending in a longitudinal direction; and first and second conductors disposed, in the waveguide, on at least one side of the waveguide in a width direction with respect to the dielectric plate, extending along the dielectric plate, and electrically connected to the first and second electrodes.

    摘要翻译： 提供了一种等离子体处理装置，其可以提高如VHF频带中的高频激发的等离子体的密度均匀性，并且通过对具有大尺寸的基板进行小型化而降低生产成本。 等离子体处理装置包括限定波导的波导构件，与等离子体形成空间相对配置的第一和第二电极，与波导构件协调地限定波导，并且电连接到波导构件; 一个向波导供电电磁能的同轴管; 布置在所述波导中并沿纵向方向延伸的电介质板; 以及第一和第二导体，其在波导中在相对于电介质板的宽度方向的至少一侧上沿着电介质板延伸并且电连接到第一和第二电极。

    METHOD AND APPARATUS FOR PRODUCTION OF METAL FILM OR THE LIKE
    7.
    发明申请
    METHOD AND APPARATUS FOR PRODUCTION OF METAL FILM OR THE LIKE 有权
    用于生产金属膜或类似物的方法和装置

    公开(公告)号：US20090233442A1

    公开(公告)日：2009-09-17

    申请号：US12471743

    申请日：2009-05-26

    申请人： Hitoshi Sakamoto ,  Naoki Yahata ,  Toshihiko Nishimori ,  Yoshiyuki Ooba ,  Hiroshi Tonegawa ,  Ikumasa Koshiro ,  Yuzuru Ogura

    发明人： Hitoshi Sakamoto ,  Naoki Yahata ,  Toshihiko Nishimori ,  Yoshiyuki Ooba ,  Hiroshi Tonegawa ,  Ikumasa Koshiro ,  Yuzuru Ogura

    IPC分类号： H01L21/3205

    CPC分类号： H01J37/321 ,  C23C16/08 ,  C23C16/14 ,  C23C16/4488 ,  H01J37/32357 ,  H01J2237/3326 ,  H01L21/28556 ,  H01L21/76879

    摘要： In a metal film production apparatus, a copper plate member is etched with a Cl2 gas plasma within a chamber to form a precursor comprising a Cu component and a Cl2 gas; and the temperatures of the copper plate member and a substrate and a difference between their temperatures are controlled as predetermined, to deposit the Cu component of the precursor on the substrate, thereby forming a film of Cu. In this apparatus, Cl* is formed in an excitation chamber of a passage communicating with the interior of the chamber to flow a Cl2 gas, and the Cl* is supplied into the chamber to withdraw a Cl2 gas from the precursor adsorbed onto the substrate, thereby promoting a Cu film formation reaction. The apparatus has a high film formation speed, can use an inexpensive starting material, and can minimize impurities remaining in the film.

    摘要翻译： 在金属膜制造装置中，在室内用Cl 2气体等离子体蚀刻铜板构件，形成包含Cu成分和Cl 2气体的前体; 并且将铜板构件和基板的温度和它们的温度之间的差异预先控制，以将前体的Cu组分沉积在基板上，从而形成Cu膜。 在该装置中，Cl *形成在与腔室内部连通的通道的激励室中以流过Cl 2气体，并且将Cl *供应到室中以从吸附到基板上的前体中抽出Cl 2气体， 从而促进Cu成膜反应。 该设备具有高的成膜速度，可以使用廉价的起始材料，并且可以最小化残留在膜中的杂质。

    Method and apparatus for production of metal film or the like
    8.
    发明申请
    Method and apparatus for production of metal film or the like 有权
    金属膜等的制造方法和装置

    公开(公告)号：US20040029384A1

    公开(公告)日：2004-02-12

    申请号：US10384932

    申请日：2003-03-07

    发明人： Hitoshi Sakamoto ,  Naoki Yahata ,  Toshihiko Nishimori ,  Yoshiyuki Ooba ,  Hiroshi Tonegawa ,  Ikumasa Koshiro ,  Yuzuru Ogura

    IPC分类号： H01L021/302 ,  H01L021/461

    CPC分类号： H01J37/321 ,  C23C16/08 ,  C23C16/14 ,  C23C16/4488 ,  H01J37/32357 ,  H01J2237/3326 ,  H01L21/28556 ,  H01L21/76879

    摘要： In a metal film production apparatus, a copper plate member is etched with a Cl2 gas plasma within a chamber to form a precursor comprising a Cu component and a Cl2 gas; and the temperatures of the copper plate member and a substrate and a difference between their temperatures are controlled as predetermined, to deposit the Cu component of the precursor on the substrate, thereby forming a film of Cu. In this apparatus, Cl* is formed in an excitation chamber of a passage communicating with the interior of the chamber to flow a Cl2 gas, and the Cl* is supplied into the chamber to withdraw a Cl2 gas from the precursor adsorbed onto the substrate, thereby promoting a Cu film formation reaction. The apparatus has a high film formation speed, can use an inexpensive starting material, and can minimize impurities remaining in the film.

    摘要翻译： 在金属膜制造装置中，在室内用Cl 2气体等离子体蚀刻铜板构件，形成包含Cu成分和Cl 2气体的前体; 并且将铜板构件和基板的温度和它们的温度之间的差异预先控制，以将前体的Cu组分沉积在基板上，从而形成Cu膜。 在该装置中，Cl *形成在与腔室内部连通的通道的激励室中以流过Cl 2气体，并且将Cl *供应到室中以从吸附到基板上的前体中抽出Cl 2气体， 从而促进Cu成膜反应。 该设备具有高的成膜速度，可以使用廉价的起始材料，并且可以最小化残留在膜中的杂质。