公开(公告)号：US08569148B2

公开(公告)日：2013-10-29

申请号：US12449017

申请日：2008-01-29

申请人： Naoto Iizuka ,  Hirotaka Kurimoto ,  Koichi Kosaka ,  Fumiaki Maruyama

发明人： Naoto Iizuka ,  Hirotaka Kurimoto ,  Koichi Kosaka ,  Fumiaki Maruyama

IPC分类号： H01L21/306

CPC分类号： B24B37/042 ,  H01L21/02024

摘要： The present invention provides a final polishing method for a silicon single crystal wafer that performs final polishing with a polishing rate being set to 10 nm/min or below at a final polishing step as a final step among a plurality of polishing steps for polishing the silicon single crystal wafer with a polishing slurry being interposed between the silicon single crystal wafer and a polishing pad, and a silicon single crystal wafer subjected to final polishing by this method. Hereby, there can be provided the final polishing method that can obtain a silicon single crystal wafer with less PIDs (Polishing Induced Defects) and the silicon single crystal wafer subjected to final polishing by this method.

摘要翻译： 本发明提供了一种用于在最终研磨步骤中将研磨速度设定为10nm /分以下的最终抛光的硅单晶晶片的最终抛光方法，作为用于研磨硅的多个研磨步骤中的最终步骤 将具有抛光浆料的单晶晶片置于硅单晶晶片和抛光垫之间，以及通过该方法进行最终抛光的硅单晶晶片。 因此，可以提供可以获得具有较少PID（抛光诱导缺陷）的硅单晶晶片和通过该方法进行最终抛光的硅单晶晶片的最终抛光方法。

公开(公告)号：US20100090314A1

公开(公告)日：2010-04-15

申请号：US12449017

申请日：2008-01-29

申请人： Naoto Iizuka ,  Hirotaka Kurimoto ,  Koichi Kosaka ,  Fumiaki Maruyama

发明人： Naoto Iizuka ,  Hirotaka Kurimoto ,  Koichi Kosaka ,  Fumiaki Maruyama

IPC分类号： H01L29/34 ,  H01L21/306

CPC分类号： B24B37/042 ,  H01L21/02024

摘要： The present invention provides a final polishing method for a silicon single crystal wafer that performs final polishing with a polishing rate being set to 10 nm/min or below at a final polishing step as a final step among a plurality of polishing steps for polishing the silicon single crystal wafer with a polishing slurry being interposed between the silicon single crystal wafer and a polishing pad, and a silicon single crystal wafer subjected to final polishing by this method. Hereby, there can be provided the final polishing method that can obtain a silicon single crystal wafer with less PIDs (Polishing Induced Defects) and the silicon single crystal wafer subjected to final polishing by this method.

摘要翻译： 本发明提供了一种用于在最终研磨步骤中将研磨速度设定为10nm /分以下的最终抛光的硅单晶晶片的最终抛光方法，作为用于研磨硅的多个研磨步骤中的最终步骤 将具有抛光浆料的单晶晶片置于硅单晶晶片和抛光垫之间，以及通过该方法进行最终抛光的硅单晶晶片。 因此，可以提供可以获得具有较少PID（抛光诱导缺陷）的硅单晶晶片和通过该方法进行最终抛光的硅单晶晶片的最终抛光方法。