公开(公告)号：US5629225A

公开(公告)日：1997-05-13

申请号：US478635

申请日：1995-06-07

申请人： Takashi Iwakiri ,  Kiyomi Hirose ,  Hiroto Shinozuka ,  Osaomi Enomoto ,  Yasuhiro Okumoto

发明人： Takashi Iwakiri ,  Kiyomi Hirose ,  Hiroto Shinozuka ,  Osaomi Enomoto ,  Yasuhiro Okumoto

IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/10 ,  H01L27/108 ,  H01L21/70 ,  H01L27/00

CPC分类号： H01L27/10852 ,  H01L27/10817 ,  H01L28/60 ,  H01L28/91

摘要： A manufacturing method for a dynamic RAM containing a screen-type structure cylindrical stack cell capacitor. An SiO.sub.2 layer 22 is formed on a polysilicon layer 11 (or a semiconductor substrate 1) to serve as a preform or spacer. A nitride layer 31 is stacked on this SiO.sub.2 layer, and nitride layer 31 and SiO.sub.2 layer 22 are worked into virtually the same pattern. Then the outside surface of SiO.sub.2 layer 22 is etched using nitride layer 31 as a mask, causing the nitride layer 31 to form a lateral projection structure 31A in the region removed by the etching. A polysilicon layer 23 is adhered to the top of silicon layer 11, which serves as a capacitor lower electrode, from the top of nitride layer 31 and SiO.sub.2 layer 22, including this projected portion. Polysilicon layer 23 is etched to leave a portion of polysilicon layer 23 on the outside surface of SiO.sub.2 layer 22 directly beneath the projecting portion 31A of nitride layer 31.

摘要翻译： 一种用于包含屏幕型结构的圆柱形堆叠单元电容器的动态RAM的制造方法。 SiO 2层22形成在多晶硅层11（或半导体衬底1）上，用作预成型件或间隔件。 氮化物层31层叠在该SiO 2层上，氮化物层31和SiO 2层22被加工成几乎相同的图案。 然后，使用氮化物层31作为掩模来蚀刻SiO 2层22的外表面，使得氮化物层31在通过蚀刻去除的区域中形成横向突起结构31A。 多晶硅层23从包括该突出部分的氮化物层31和SiO 2层22的顶部附着到用作电容器下电极的硅层11的顶部。 蚀刻多晶硅层23，以在氮化物层31的突出部分31A正下方的SiO 2层22的外表面上留下多晶硅层23的一部分。