公开(公告)号：US07495333B2

公开(公告)日：2009-02-24

申请号：US11124498

申请日：2005-05-06

申请人： Kenichi Miyazaki ,  Hiroyuki Kusamori

发明人： Kenichi Miyazaki ,  Hiroyuki Kusamori

IPC分类号： H01L23/10 ,  B23K31/02

CPC分类号： H01L23/10 ,  H01L2924/0002 ,  H01L2924/01079 ,  H01L2924/00

摘要： A hermetic seal cover capable of inhibiting defects such as voids from generating in sealing a package, and a method of manufacturing the seal cover are provided. The hermetic seal cover comprises: a seal cover main body; a Ni plating layer applied onto a surface of the seal cover main body; and a Au—Sn brazing material layer fusion bonded to a surface of the Ni plating layer, and is characterized by a Ni—Sn ally layer disposed between the Ni plating layer and the Au—Sn brazing material layer. It is preferable if the Ni—Sn alloy layer has a thickness of 0.6-5.0 μm. It is also preferable if Au—Sn brazing material layer has a Sn content of 20.65-23.5 wt %.

摘要翻译： 提供能够抑制诸如空隙之类的缺陷以密封封装件的气密密封盖，以及制造密封盖的方法。 气密密封盖包括：密封盖主体; 施加到密封盖主体的表面上的Ni镀层; 以及与Ni镀层的表面熔合的Au-Sn钎焊材料层，其特征在于，在Ni镀层和Au-Sn钎料层之间设置Ni-Sn层。 Ni-Sn合金层的厚度优选为0.6〜5.0μm。 Au-Sn钎料层的Sn含量也优选为20.65〜23.5重量％。

公开(公告)号：US20060001172A1

公开(公告)日：2006-01-05

申请号：US11124498

申请日：2005-05-06

申请人： Kenichi Miyazaki ,  Hiroyuki Kusamori

发明人： Kenichi Miyazaki ,  Hiroyuki Kusamori

IPC分类号： H01L23/48 ,  H01L21/20

CPC分类号： H01L23/10 ,  H01L2924/0002 ,  H01L2924/01079 ,  H01L2924/00

摘要： A hermetic seal cover capable of inhibiting defects such as voids from generating in sealing a package, and a method of manufacturing the seal cover are provided. The hermetic seal cover comprises: a seal cover main body; a Ni plating layer applied onto a surface of the seal cover main body; and a Au—Sn brazing material layer fusion bonded to a surface of the Ni plating layer, and is characterized by a Ni—Sn ally layer disposed between the Ni plating layer and the Au—Sn brazing material layer. It is preferable if the Ni—Sn alloy layer has a thickness of 0.6-5.0 μm. It is also preferable if Au—Sn brazing material layer has a Sn content of 20.65-23.5 wt %.

摘要翻译： 提供能够抑制诸如空隙之类的缺陷以密封封装件的气密密封盖，以及制造密封盖的方法。 气密密封盖包括：密封盖主体; 施加到密封盖主体的表面上的Ni镀层; 以及与Ni镀层的表面熔合的Au-Sn钎焊材料层，其特征在于，在Ni镀层和Au-Sn钎料层之间设置Ni-Sn层。 Ni-Sn合金层的厚度优选为0.6〜5.0μm。 Au-Sn钎料层的Sn含量也优选为20.65〜23.5重量％。

公开(公告)号：US06432157B1

公开(公告)日：2002-08-13

申请号：US09701380

申请日：2000-11-30

申请人： Tetsuya Nakamura ,  Osamu Sakaguchi ,  Hiroyuki Kusamori ,  Osamu Matsuzawa ,  Masahiro Takahashi ,  Toshiya Yamamoto

发明人： Tetsuya Nakamura ,  Osamu Sakaguchi ,  Hiroyuki Kusamori ,  Osamu Matsuzawa ,  Masahiro Takahashi ,  Toshiya Yamamoto

IPC分类号： C22C506

CPC分类号： C22C5/06 ,  B22F2009/046 ,  B22F2998/10 ,  C22C32/0021 ,  H01H1/02372 ,  B22F9/04 ,  C22C1/1078 ,  B22F3/16 ,  B22F3/20

摘要： An object of the present invention is to provide a method of producing an Ag—ZnO electric contact material which can uniformly disperse ZnO micrograms in Ag; which maintains low contact resistance; which exhibits enhanced welding resistance and wear resistance; and which is suitable in view of production costs. The method of producing an Ag—ZnO electrical contact material comprises casting Ag and Zn at predetermined proportions and subjecting the resultant Ag—ZnO alloy to internal oxidation so as to disperse ZnO in Ag, the method being characterized in that an Ag—Zn alloy comprising 5-10 wt. % (as reduced to weight of metal) Zn, the balance being Ag, is formed into chips; the chips are subjected to internal oxidation; the internally oxidized chips are compacted to thereby form billets; the billets are pressed and sintered; and subsequently, the sintered billets are extruded, to thereby yield uniform dispersion, in Ag, of ZnO micrograms.

摘要翻译： 本发明的目的是提供一种能够均匀分散Ag中的ZnO微克的Ag-ZnO电接触材料的制造方法。 其保持低接触电阻; 表现出增强的耐焊接性和耐磨性; 并且鉴于生产成本是合适的。 制造Ag-ZnO电接触材料的方法包括以预定比例浇铸Ag和Zn，并对所得Ag-ZnO合金进行内部氧化，以将ZnO分散在Ag中，其特征在于包含Ag-Zn合金 5-10重量％ ％（以金属重量计），余量为Ag的Zn形成芯片; 芯片经受内部氧化; 内部氧化的芯片被压实从而形成坯料; 坯料被压制和烧结; 随后将烧结的坯料挤出，从而在Ag中产生ZnO微米的均匀分散。