公开(公告)号：US20120247667A1

公开(公告)日：2012-10-04

申请号：US13232232

申请日：2011-09-14

申请人： Hisashi HASHIGUCHI ,  Hideo Eto ,  Makoto Saito

发明人： Hisashi HASHIGUCHI ,  Hideo Eto ,  Makoto Saito

IPC分类号： H01L21/3065

CPC分类号： H01L21/68735 ,  H01J37/32477 ,  H01J37/32715 ,  H01L21/68757

摘要： According to an embodiment, a plasma treatment apparatus includes a processing target holding unit and a plasma generation unit in a chamber. The processing target holding unit includes a supporting table on which a wafer is mounted, a ring-shaped insulator ring arranged at an outer periphery of the supporting table, and a protective film containing yttria for covering a side surface section and an upper surface section of the insulator ring. The protective film is formed thicker on the upper surface section than on the side surface section of the insulator ring.

摘要翻译： 根据实施例，等离子体处理装置包括处理对象保持单元和室中的等离子体产生单元。 处理对象保持单元包括安装有晶片的支撑台，布置在支撑台的外周的环状绝缘体环，以及包含用于覆盖侧表面部分和上表面部分的氧化钇的保护膜 绝缘子环。 保护膜在上表面部分比在绝缘体环的侧表面部分形成得更厚。

公开(公告)号：US20120216955A1

公开(公告)日：2012-08-30

申请号：US13401115

申请日：2012-02-21

申请人： Hideo ETO ,  Makoto Saito ,  Hisashi Hashiguchi ,  Atsushi Ito ,  Michio Sato

发明人： Hideo ETO ,  Makoto Saito ,  Hisashi Hashiguchi ,  Atsushi Ito ,  Michio Sato

IPC分类号： C23F1/08

CPC分类号： H01J37/32477 ,  C23C16/4404 ,  H01J37/32495 ,  H01J37/3288 ,  H01J2237/3341

摘要： According to one embodiment, a plasma processing apparatus that includes a process target holding portion and a plasma generating unit in a chamber, and processes a process target by using generated plasma is provided. An yttrium oxide film is formed on an inner wall of the chamber and a surface of a structural member in the chamber on a generation region side of the plasma. The yttrium oxide film includes yttrium oxide particles, has a film thickness of 10 μm or more and 200 μm or less, has a film density of 90% or more, and is such that yttrium oxide particles, which are present in a unit area 20 μm×20 μm and whose grain boundary is confirmable, are 0 to 80% in area ratio.

摘要翻译： 根据一个实施例，提供一种等离子体处理装置，其包括室中的处理对象保持部和等离子体生成单元，并且通过使用产生的等离子体来处理处理目标。 在等离子体的发生区域侧的室的内壁和室内的结构构件的表面上形成氧化钇膜。 氧化钇膜包括氧化钇颗粒，膜厚度为10μm以上且200μm以下，膜密度为90％以上，并且使得存在于单位面积20中的氧化钇颗粒 μm×20μm，晶界可以确认，面积比为0〜80％。