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    PLASMA PROCESSING APPARATUS
    1.
    发明申请
    PLASMA PROCESSING APPARATUS 审中-公开
    等离子体加工设备

    公开(公告)号：US20120216955A1

    公开(公告)日：2012-08-30

    申请号：US13401115

    申请日：2012-02-21

    申请人： Hideo ETO ,  Makoto Saito ,  Hisashi Hashiguchi ,  Atsushi Ito ,  Michio Sato

    发明人： Hideo ETO ,  Makoto Saito ,  Hisashi Hashiguchi ,  Atsushi Ito ,  Michio Sato

    IPC分类号： C23F1/08

    CPC分类号： H01J37/32477 ,  C23C16/4404 ,  H01J37/32495 ,  H01J37/3288 ,  H01J2237/3341

    摘要： According to one embodiment, a plasma processing apparatus that includes a process target holding portion and a plasma generating unit in a chamber, and processes a process target by using generated plasma is provided. An yttrium oxide film is formed on an inner wall of the chamber and a surface of a structural member in the chamber on a generation region side of the plasma. The yttrium oxide film includes yttrium oxide particles, has a film thickness of 10 μm or more and 200 μm or less, has a film density of 90% or more, and is such that yttrium oxide particles, which are present in a unit area 20 μm×20 μm and whose grain boundary is confirmable, are 0 to 80% in area ratio.

    摘要翻译： 根据一个实施例，提供一种等离子体处理装置，其包括室中的处理对象保持部和等离子体生成单元，并且通过使用产生的等离子体来处理处理目标。 在等离子体的发生区域侧的室的内壁和室内的结构构件的表面上形成氧化钇膜。 氧化钇膜包括氧化钇颗粒，膜厚度为10μm以上且200μm以下，膜密度为90％以上，并且使得存在于单位面积20中的氧化钇颗粒 μm×20μm，晶界可以确认，面积比为0〜80％。

    FLOW SENSOR, MASS FLOW CONTROLLER, AND METHOD FOR MANUFACTURING FLOW SENSOR
    3.
    发明申请
    FLOW SENSOR, MASS FLOW CONTROLLER, AND METHOD FOR MANUFACTURING FLOW SENSOR 失效
    流量传感器，质量流量控制器和制造流量传感器的方法

    公开(公告)号：US20130074593A1

    公开(公告)日：2013-03-28

    申请号：US13419675

    申请日：2012-03-14

    申请人： Hideo ETO ,  Makoto SAITO

    发明人： Hideo ETO ,  Makoto SAITO

    IPC分类号： G01F1/68 ,  H05K3/00

    CPC分类号： G01F1/6847 ,  G01F1/69 ,  G01F1/696 ,  G01F1/698 ,  G01F15/006 ,  G05D7/0635 ,  H05K1/0212 ,  H05K2201/09481

    摘要： According to one embodiment, a first substrate has a pair of thermosensitive films, a heater film, and a passage protective film having corrosion resistance in a passage forming region on a first main surface, and has a metal sealing film having corrosion resistance in a region other than the passage forming region. A second substrate has a groove formed in the passage forming region on a second main surface and a side wall forming portion separating other regions other than the passage forming region from the groove and protruding beyond the other regions. A fixing member fixes the first substrate to the second substrate. The side wall forming portion of the second substrate is compression bonded so that the side wall forming portion is located on the metal sealing film on the first substrate.

    摘要翻译： 根据一个实施例，第一基板具有一对热敏膜，加热膜和在第一主表面上的通道形成区域中具有耐腐蚀性的通道保护膜，并且在区域中具有耐腐蚀性的金属密封膜 而不是通道形成区域。 第二基板具有形成在第二主表面上的通道形成区域中的槽和侧壁形成部分，该沟槽形成区域与沟槽形成区域之外的其它区域与槽分离，并突出超过其它区域。 固定部件将第一基板固定到第二基板。 第二基板的侧壁形成部分被压接，使得侧壁形成部分位于第一基板上的金属密封膜上。

    POWER SUPPLY CONTROL DEVICE, PLASMA PROCESSING DEVICE, AND PLASMA PROCESSING METHOD
    4.
    发明申请
    POWER SUPPLY CONTROL DEVICE, PLASMA PROCESSING DEVICE, AND PLASMA PROCESSING METHOD 有权
    电源控制装置，等离子体处理装置和等离子体处理方法

    公开(公告)号：US20120038277A1

    公开(公告)日：2012-02-16

    申请号：US13198356

    申请日：2011-08-04

    申请人： Hideo ETO ,  Nobuyasu Nishiyama ,  Makoto Saito ,  Keiji Suzuki

    发明人： Hideo ETO ,  Nobuyasu Nishiyama ,  Makoto Saito ,  Keiji Suzuki

    IPC分类号： H05B31/02 ,  H01L21/3065

    CPC分类号： H01J37/32091 ,  H01J37/32183 ,  H01J37/32935

    摘要： According to one embodiment, a power supply control device of a plasma processing device having a plasma generation unit which generates plasma in a process chamber. The power supply control device includes a radio frequency power supply, a storage unit, and a matching circuit. The radio frequency power supply supplies a power to the plasma generation unit. The storage unit stores matching information including a first matching value, a second process condition, and a third matching value. The first matching value corresponds to process information of a first process condition. The second matching value corresponds to process information of a second process condition. The third matching value corresponds to process information of a transient state where the first process condition is being switched to the second process condition. The matching circuit matches impedances based on the matching information.

    摘要翻译： 根据一个实施例，一种具有在处理室中产生等离子体的等离子体产生单元的等离子体处理装置的电源控制装置。 电源控制装置包括射频电源，存储单元和匹配电路。 射频电源为等离子体发生单元供电。 存储单元存储包括第一匹配值，第二处理条件和第三匹配值的匹配信息。 第一匹配值对应于第一处理条件的处理信息。 第二匹配值对应于第二处理条件的处理信息。 第三匹配值对应于将第一处理条件切换到第二处理条件的过渡状态的处理信息。 匹配电路根据匹配信息匹配阻抗。

    MASS FLOW CONTROLLER, MASS FLOW CONTROLLER SYSTEM, SUBSTRATE PROCESSING DEVICE, AND GAS FLOW RATE ADJUSTING METHOD
    6.
    发明申请
    MASS FLOW CONTROLLER, MASS FLOW CONTROLLER SYSTEM, SUBSTRATE PROCESSING DEVICE, AND GAS FLOW RATE ADJUSTING METHOD 失效
    质量流量控制器，质量流量控制器系统，基板处理装置和气体流量调整方法

    公开(公告)号：US20120000542A1

    公开(公告)日：2012-01-05

    申请号：US13173409

    申请日：2011-06-30

    申请人： Hideo ETO ,  Makoto SAITO ,  Nobuyasu NISHIYAMA

    发明人： Hideo ETO ,  Makoto SAITO ,  Nobuyasu NISHIYAMA

    IPC分类号： F15D1/00 ,  H01L21/306

    CPC分类号： G05D7/0623 ,  Y10T137/0368 ,  Y10T137/7759 ,  Y10T137/7761 ,  Y10T137/87314 ,  Y10T137/87322

    摘要： According to one embodiment, a flow rate adjusting unit is disposed on a gas passageway and includes a valve that adjusts the flow rate of a gas and an actuator that controls the displacement amount of the valve. A displacement amount storage unit stores displacement amount information in which a displacement amount of the valve, used when a gas flows into the gas passageway at a flow rate defined according to a process procedure before performing the process procedure, is obtained in advance for each process procedure. A setting circuit acquires the displacement amount corresponding to the process procedure from the displacement amount storage unit, and controls the actuator on the basis of the acquired displacement amount.

    摘要翻译： 根据一个实施例，流量调节单元设置在气体通道上，并且包括调节气体流量的阀和控制阀的位移量的致动器。 位移量存储单元存储位移量信息，其中，在每个处理预先获得在气体流入气体通道期间使用的阀的位移量以根据处理过程之前的处理程序限定的流量的位移量信息 程序。 设置电路从位移量存储单元获取与处理过程对应的位移量，并基于获取的位移量来控制致动器。

    MACHINING ELECTRODE, ELECTROCHEMICAL MACHINING APPARATUS, ELECTROCHEMICAL MACHINING METHOD AND METHOD FOR MANUFACTURING STRUCTURE BODY
    7.
    发明申请
    MACHINING ELECTRODE, ELECTROCHEMICAL MACHINING APPARATUS, ELECTROCHEMICAL MACHINING METHOD AND METHOD FOR MANUFACTURING STRUCTURE BODY 审中-公开
    加工电极，电化学加工设备，电化学加工方法及制造结构体的方法

    公开(公告)号：US20100051475A1

    公开(公告)日：2010-03-04

    申请号：US12551948

    申请日：2009-09-01

    申请人： Hideo ETO ,  Shuichi Saito

    发明人： Hideo ETO ,  Shuichi Saito

    IPC分类号： B23H7/22 ,  B23H7/26 ,  B23H7/14 ,  C25F3/00

    CPC分类号： C25F3/00 ,  B23H3/04 ,  B23H3/06

    摘要： A machining electrode includes: a base substance including an electrolytic portion faced to a workpiece on one end face in an axial direction and having conductivity; an insulating unit provided on a face in a direction generally orthogonal to the axial direction of the base substance and having insulation; and a shielding unit provided on a face opposite to the base substance of the insulating unit.

    摘要翻译： 一种加工电极包括：基体，其包括在轴向上的一个端面上面向工件的电解部分，并具有导电性; 绝缘单元，设置在与基体的轴向大致正交的方向的面上，具有绝缘体; 以及设置在与绝缘单元的基体相对的面上的屏蔽单元。