Vapor phase growth apparatus
    1.
    发明授权
    Vapor phase growth apparatus 有权
    气相生长装置

    公开(公告)号:US07662733B2

    公开(公告)日:2010-02-16

    申请号:US12318104

    申请日:2008-12-22

    申请人: Hisataka Nagai

    发明人: Hisataka Nagai

    IPC分类号: H01L21/02

    摘要: A method of cooling a complex electronic system includes preventing system air from passing through a front side and a rear side of a server system main board, organizing a plurality of electronic segments of the server system main board, providing cool air horizontally to the server system main board through a cool air intake provided at a position located underneath the front side and at a bottom side of the server system main board, using the cool air intake to provide the cool air to a plurality of cooling segments that redirect the cool air vertically at a 90° angle, and using a hot air exhaust after the hot air reaches the top side of the server system main board to redirect the hot air horizontally at a 90° angle and exhaust the hot air.

    摘要翻译: 冷却复杂电子系统的方法包括防止系统空气通过服务器系统主板的前侧和后侧,组织服务器系统主板的多个电子部分,向服务器系统水平地提供冷空气 主板通过设置在服务器系统主板的正面和底面下方的位置处的冷空气入口,使用冷空气入口将冷空气提供给多个冷却段,其将冷空气垂直地重定向 以90°的角度,并且在热空气到达服务器系统主板的顶侧之后使用热空气排出物,以90度的角度水平地重新定向热空气并排出热空气。

    Vapor phase growth apparatus
    2.
    发明申请

    公开(公告)号:US20060124062A1

    公开(公告)日:2006-06-15

    申请号:US11070162

    申请日:2005-03-03

    申请人: Hisataka Nagai

    发明人: Hisataka Nagai

    IPC分类号: C23C16/00

    摘要: A vapor phase growth apparatus has a plurality of rotation susceptors to hold the semiconductor wafer, and a disk-like revolution susceptor on which the plurality of rotation susceptors are rotatably mounted through a bearing. The plurality of rotation susceptors each are, on its periphery, provided with a pinion gear that meshes with a common gear that allows each of the plurality of rotation susceptors to rotate on its center axis. The outermost end of rotation susceptor is substantially aligned with the outermost end of revolution susceptor and the pinion gear is located directly above the bearing.

    Vapor phase growth apparatus
    3.
    发明授权
    Vapor phase growth apparatus 有权
    气相生长装置

    公开(公告)号:US07494562B2

    公开(公告)日:2009-02-24

    申请号:US11070162

    申请日:2005-03-03

    申请人: Hisataka Nagai

    发明人: Hisataka Nagai

    IPC分类号: C23F1/00 H01L21/306 C23C16/00

    摘要: A vapor phase growth apparatus has a plurality of rotation susceptors to hold the semiconductor wafer, and a disk-like revolution susceptor on which the plurality of rotation susceptors are rotatably mounted through a bearing. The plurality of rotation susceptors each are, on its periphery, provided with a pinion gear that meshes with a common gear that allows each of the plurality of rotation susceptors to rotate on its center axis. The outermost end of rotation susceptor is substantially aligned with the outermost end of revolution susceptor and the pinion gear is located directly above the bearing.

    摘要翻译: 气相生长装置具有多个用于保持半导体晶片的旋转基座,以及多个旋转基座通过轴承可旋转地安装在其上的圆盘状的旋转基座。 多个旋转基座在其周边上分别设有小齿轮,该小齿轮与普通齿轮啮合,该齿轮允许多个旋转基座中的每一个在其中心轴线上旋转。 旋转基座的最外端基本上与旋转基座的最外端对齐,小齿轮位于轴承的正上方。

    Manufacturing method of semiconductor photonic device substrate
    4.
    发明授权
    Manufacturing method of semiconductor photonic device substrate 有权
    半导体光子器件衬底的制造方法

    公开(公告)号:US08367431B2

    公开(公告)日:2013-02-05

    申请号:US12766684

    申请日:2010-04-23

    IPC分类号: G01R31/26

    摘要: In a manufacturing method of a semiconductor photonic device substrate, before multi-layer films different in material composition are successively and gradually crystal-grown in one chamber, an inter-layer growth rate model showing a relation in growth rate between each layer is defined, a growth rate of a film corresponding to at least one or more layers is obtained by actual crystal growth using an individual substrate, a growth rate of a film corresponding to other layers is estimated from the obtained growth rate by the inter-layer growth rate model, and a growth time is determined in accordance with a film thickness of each layer of the semiconductor photonic device substrate based on the actually obtained growth rate and the estimated growth rate. These steps are carried out by using a computer system connected to an MOCVD equipment, and then, a crystal growth of the semiconductor photonic device substrate is performed.

    摘要翻译: 在半导体光子器件衬底的制造方法中,在不同材料组成的多层膜在一个室中连续逐渐晶体生长的情况下,定义表示各层之间的生长速度关系的层间生长速率模型, 通过使用单个基板的实际晶体生长获得对应于至少一个或多个层的膜的生长速率,通过层间生长速率模型从获得的生长速率估计与其它层相对应的膜的生长速率 根据实际获得的生长速度和估计的生长速度,根据半导体光子器件基板的各层的膜厚确定生长时间。 这些步骤通过使用连接到MOCVD设备的计算机系统进行,然后执行半导体光子器件衬底的晶体生长。

    MANUFACTURING METHOD OF SEMICONDUCTOR PHOTONIC DEVICE SUBSTRATE
    5.
    发明申请
    MANUFACTURING METHOD OF SEMICONDUCTOR PHOTONIC DEVICE SUBSTRATE 有权
    半导体光电器件基板的制造方法

    公开(公告)号:US20110003413A1

    公开(公告)日:2011-01-06

    申请号:US12766684

    申请日:2010-04-23

    IPC分类号: H01L21/20

    摘要: In a manufacturing method of a semiconductor photonic device substrate, before multi-layer films different in material composition are successively and gradually crystal-grown in one chamber, an inter-layer growth rate model showing a relation in growth rate between each layer is defined, a growth rate of a film corresponding to at least one or more layers is obtained by actual crystal growth using an individual substrate, a growth rate of a film corresponding to other layers is estimated from the obtained growth rate by the inter-layer growth rate model, and a growth time is determined in accordance with a film thickness of each layer of the semiconductor photonic device substrate based on the actually obtained growth rate and the estimated growth rate. These steps are carried out by using a computer system connected to an MOCVD equipment, and then, a crystal growth of the semiconductor photonic device substrate is performed.

    摘要翻译: 在半导体光子器件衬底的制造方法中,在不同材料组成的多层膜在一个室中连续逐渐晶体生长的情况下,定义表示各层之间的生长速度关系的层间生长速率模型, 通过使用单个基板的实际晶体生长获得对应于至少一个或多个层的膜的生长速率,通过层间生长速率模型从获得的生长速率估计与其它层相对应的膜的生长速率 根据实际获得的生长速度和估计的生长速度,根据半导体光子器件基板的各层的膜厚确定生长时间。 这些步骤通过使用连接到MOCVD设备的计算机系统进行,然后执行半导体光子器件衬底的晶体生长。

    Vapor phase growth apparatus
    6.
    发明申请
    Vapor phase growth apparatus 有权
    气相生长装置

    公开(公告)号:US20090117721A1

    公开(公告)日:2009-05-07

    申请号:US12318104

    申请日:2008-12-22

    申请人: Hisataka Nagai

    发明人: Hisataka Nagai

    IPC分类号: H01L21/205 C23C16/54

    摘要: A method of cooling a complex electronic system includes preventing system air from passing through a front side and a rear side of a server system main board, organizing a plurality of electronic segments of the server system main board, providing cool air horizontally to the server system main board through a cool air intake provided at a position located underneath the front side and at a bottom side of the server system main board, using the cool air intake to provide the cool air to a plurality of cooling segments that redirect the cool air vertically at a 90° angle, and using a hot air exhaust after the hot air reaches the top side of the server system main board to redirect the hot air horizontally at a 90° angle and exhaust the hot air.

    摘要翻译: 冷却复杂电子系统的方法包括防止系统空气通过服务器系统主板的前侧和后侧,组织服务器系统主板的多个电子部分,向服务器系统水平地提供冷空气 主板通过设置在服务器系统主板的正面和底面下方的位置处的冷空气入口,使用冷空气入口将冷空气提供给多个冷却段,其将冷空气垂直地重定向 以90°的角度,并且在热空气到达服务器系统主板的顶侧之后使用热空气排出物,以90度的角度水平地重新定向热空气并排出热空气。