公开(公告)号：US4358349A

公开(公告)日：1982-11-09

申请号：US233596

申请日：1981-01-24

申请人： Takagi Masami ,  Nakayama Shunichi ,  Honda Kazuyoshi

发明人： Takagi Masami ,  Nakayama Shunichi ,  Honda Kazuyoshi

IPC分类号： H05K3/18 ,  H05K1/00 ,  H05K1/02 ,  H05K3/10 ,  H05K3/24 ,  H05K3/40 ,  C25D5/00 ,  C25D17/18

CPC分类号： H05K3/243 ,  H05K3/108 ,  H05K1/0263 ,  H05K1/0265 ,  H05K1/0393 ,  H05K2201/09736 ,  H05K2203/0557 ,  H05K2203/0574 ,  H05K2203/0723 ,  H05K2203/0746 ,  H05K2203/085 ,  H05K2203/104 ,  H05K2203/1545 ,  H05K3/181 ,  H05K3/241 ,  H05K3/4007

摘要： A method of this invention for forming electrical wiring paths on an insulative substrate by means of an electroplating only at necessary portions on the insulative substrate comprises steps of forming on the insulative substrate a plated metal foundation layer which comprises an extremely thin conductive metal layer, closely fitting onto this extremely thin layer a first mask member from which the necessary portions for forming the electrical wiring paths are removed and having a surface to which no plating is applicable, forming a first plated layer of such metal as copper on the extremely thin conductive metal layer over the first mask member, closely fitting onto the first plated layer a second mask member from which some but not all portion of the electrical wiring paths of the first mask member are removed, forming a second plated layer of a second metal on the second mask member, and removing the first and second mask members and thus exposed portions of the extremely thin conductive metal layer, whereby the electrical wiring paths can be formed of a first metal only at the necessary portions on the insulative substrate, so that the amount to be used of such conductive first metal as copper can be reduced and it can be made possible to have a different second metal selectively plated on some but not all of such electrical wiring paths so as to improve environmental durability, to have the same first and second metal plated so as to improve the environmental durability, and to have the same first and second metal plated so as to increase the thickness of such electrical wiring paths and thereby increase the current flowing capacity.

摘要翻译： PCT No.PCT / JP80 / 00042 Sec。 371日期1981年1月26日 102（e）日期1981年1月26日PCT提交1980年3月13日PCT公布。 出版物WO80 / 02632 日本时间1980年11月27日。一种用于在绝缘基板上仅在绝缘基板上的必要部分上通过电镀在绝缘基板上形成电布线路径的方法包括以下步骤：在绝缘基板上形成电镀金属基底层， 非常薄的导电金属层，紧密地配合到这个极薄的层上，去除用于形成电布线路径的必要部分的第一掩模构件，并且具有不具有电镀的表面，形成第一镀层， 在第一掩模构件上的非常薄的导电金属层上的铜，紧密地配合到第一镀层上的第二掩模构件，第一掩模构件的电路布线路径的一些但不是全部部分从该掩模构件去除，形成第二镀层 在第二掩模构件上的第二金属，并且移除第一和第二掩模构件，从而暴露出e部分 绝缘薄导电金属层，由此电绝缘基板上的必要部分可以由第一金属形成电路径，从而能够减少与铜等导电性的第一金属相同的量，并且可以制成 可能具有在一些但不是全部这样的电路路径上选择性地镀覆的不同的第二金属，从而提高环境耐久性，使得具有相同的第一和第二金属镀以提高环境耐久性，并且具有相同的第一和第 第二金属电镀以增加这种电路径的厚度，从而增加电流流动能力。