公开(公告)号：US08076005B2

公开(公告)日：2011-12-13

申请号：US11726972

申请日：2007-03-22

申请人： Richard E. Demaray ,  Hong Mei Zhang ,  Mukundan Narasimhan ,  Vassiliki Milonopoulou

发明人： Richard E. Demaray ,  Hong Mei Zhang ,  Mukundan Narasimhan ,  Vassiliki Milonopoulou

IPC分类号： B32B9/00 ,  B32B15/04

CPC分类号： H01L21/7687 ,  C23C14/0036 ,  C23C14/083 ,  C23C14/345 ,  H01L21/2855 ,  H01L21/31604

摘要： High density oxide films are deposited by a pulsed-DC, biased, reactive sputtering process from a titanium containing target to form high quality titanium containing oxide films. A method of forming a titanium based layer or film according to the present invention includes depositing a layer of titanium containing oxide by pulsed-DC, biased reactive sputtering process on a substrate. In some embodiments, the layer is TiO2. In some embodiments, the layer is a sub-oxide of Titanium. In some embodiments, the layer is TixOy wherein x is between about 1 and about 4 and y is between about 1 and about 7. In some embodiments, the layer can be doped with one or more rare-earth ions. Such layers are useful in energy and charge storage, and energy conversion technologies.

摘要翻译： 通过脉冲DC偏置的反应溅射工艺从含钛靶材沉积高密度氧化物膜以形成高质量的含钛氧化物膜。 根据本发明的形成钛基层或膜的方法包括通过脉冲DC偏压反应溅射工艺在衬底上沉积含钛氧化物层。 在一些实施方案中，该层是TiO 2。 在一些实施方案中，该层是钛的亚氧化物。 在一些实施方案中，该层为TixOy，其中x为约1至约4，y为约1至约7.在一些实施方案中，该层可掺杂一种或多种稀土离子。 这些层在能量和电荷存储以及能量转换技术中是有用的。

公开(公告)号：US07238628B2

公开(公告)日：2007-07-03

申请号：US10851542

申请日：2004-05-20

申请人： Richard E. Demaray ,  Hong Mei Zhang ,  Mukundan Narasimhan ,  Vassiliki Milonopoulou

发明人： Richard E. Demaray ,  Hong Mei Zhang ,  Mukundan Narasimhan ,  Vassiliki Milonopoulou

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/7687 ,  C23C14/0036 ,  C23C14/083 ,  C23C14/345 ,  H01L21/2855 ,  H01L21/31604

摘要： High density oxide films are deposited by a pulsed-DC, biased, reactive sputtering process from a titanium containing target to form high quality titanium containing oxide films. A method of forming a titanium based layer or film according to the present invention includes depositing a layer of titanium containing oxide by pulsed-DC, biased reactive sputtering process on a substrate. In some embodiments, the layer is TiO2. In some embodiments, the layer is a sub-oxide of Titanium. In some embodiments, the layer is TixOy wherein x is between about 1 and about 4 and y is between about 1 and about 7. In some embodiments, the layer can be doped with one or more rare-earth ions. Such layers are useful in energy and charge storage, and energy conversion technologies.

公开(公告)号：US06613199B1

公开(公告)日：2003-09-02

申请号：US10033165

申请日：2001-10-25

申请人： Jeffrey A. Tobin ,  Jean Qing Lu ,  Thomas Mountsier ,  Hong Mei Zhang

发明人： Jeffrey A. Tobin ,  Jean Qing Lu ,  Thomas Mountsier ,  Hong Mei Zhang

IPC分类号： C23C1435

CPC分类号： H01J37/3405

摘要： A hollow cathode magnetron comprises an open top target within a hollow cathode. The open top target can be biased to a negative potential so as to form an electric field within the cathode to generate a plasma. The magnetron uses at least one electromagnetic coil to shape and maintain a density of the plasma within the cathode. The magnetron also has an anode located beneath the cathode. The open top target can have one of several different geometries including flat annular, conical and cylindrical, etc.

摘要翻译： 空心阴极磁控管包括空心阴极内的开放顶部靶。 敞开的顶部靶可以被偏压到负电位，以便在阴极内形成电场以产生等离子体。 磁控管使用至少一个电磁线圈来形成并保持阴极内的等离子体的密度。 磁控管还具有位于阴极下方的阳极。 敞开的顶部目标可以具有几种不同的几何形状之一，包括平的环形，圆锥形和圆柱形等。

公开(公告)号：US06500762B2

公开(公告)日：2002-12-31

申请号：US10056751

申请日：2002-01-24

申请人： Imran Hashim ,  Hong-Mei Zhang ,  John C. Forster

发明人： Imran Hashim ,  Hong-Mei Zhang ,  John C. Forster

IPC分类号： H01L2144

CPC分类号： H01L21/76877 ,  H01L21/2855 ,  H01L23/53233 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： We have discovered a method of improving step coverage of a copper seed layer deposited over a semiconductor feature surface which is particularly useful for small size features having a high aspect ratio. We have demonstrated that it is possible to increase the copper seed layer coverage simultaneously at the bottom of a high aspect ratio contact via and on the walls of the via by increasing the percentage of the depositing copper species which are ions. The percentage of species ionization which is necessary to obtain sufficient step coverage for the copper seed layer is a function of the aspect ratio of the feature. An increase in the percentage of copper species which are ionized can be achieved using techniques known in the art, including but not limited to applicants' preferred technique, an inductively coupled RF ion metal plasma.

摘要翻译： 我们已经发现了一种改进沉积在半导体特征表面上的铜籽晶层的台阶覆盖率的方法，该方法对于具有高纵横比的小尺寸特征特别有用。 我们已经证明，可以通过增加作为离子的沉积铜物质的百分比，在高纵横比接触通孔和通孔的壁上同时增加铜种子层覆盖。 获得铜种子层足够的阶梯覆盖所必需的物质电离的百分比是该特征的纵横比的函数。 可以使用本领域已知的技术来实现电离的铜物质的百分比的增加，包括但不限于申请人的优选技术，电感耦合RF离子金属等离子体。

公开(公告)号：US06391776B1

公开(公告)日：2002-05-21

申请号：US09754894

申请日：2001-01-05

申请人： Imran Hashim ,  Hong-Mei Zhang ,  John C. Forster

发明人： Imran Hashim ,  Hong-Mei Zhang ,  John C. Forster

IPC分类号： H01L2144

CPC分类号： H01L21/76877 ,  H01L21/2855 ,  H01L23/53233 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of improving step coverage of a copper seed layer deposited over a semiconductor feature surface which is particularly useful for small size features having a high aspect ratio. Using a contact via as an example of a high aspect ratio feature, we have demonstrated that it is possible to increase the copper seed layer coverage simultaneously at both the bottom of the via and on the wall of the via . This increase is achieved by increasing the percentage of the depositing copper species which are ions. The percentage of species ionization which is necessary to obtain sufficient step coverage for the copper seed layer is a function of the aspect ratio of the feature. For features having a 0.25 &mgr;m or smaller feature size, an aspect ratio of about 3:1 requires that about 50% or more of the copper species be ions at the time of deposition on the substrate.

摘要翻译： 一种改善沉积在半导体特征表面上的铜籽晶层的台阶覆盖率的方法，其特别适用于具有高纵横比的小尺寸特征。 使用接触通孔作为高宽比特征的实例，我们已经证明可以在通孔的底部和通孔的壁上同时增加铜种子层覆盖度。 这种增加是通过增加沉积作为离子的铜物质的百分比来实现的。 获得铜种子层足够的阶梯覆盖所必需的物质电离的百分比是该特征的纵横比的函数。 对于具有0.25μm或更小特征尺寸的特征，约3:1的纵横比要求在衬底上沉积时约50％或更多的铜物质是离子。