公开(公告)号：US08076005B2

公开(公告)日：2011-12-13

申请号：US11726972

申请日：2007-03-22

申请人： Richard E. Demaray ,  Hong Mei Zhang ,  Mukundan Narasimhan ,  Vassiliki Milonopoulou

发明人： Richard E. Demaray ,  Hong Mei Zhang ,  Mukundan Narasimhan ,  Vassiliki Milonopoulou

IPC分类号： B32B9/00 ,  B32B15/04

CPC分类号： H01L21/7687 ,  C23C14/0036 ,  C23C14/083 ,  C23C14/345 ,  H01L21/2855 ,  H01L21/31604

摘要： High density oxide films are deposited by a pulsed-DC, biased, reactive sputtering process from a titanium containing target to form high quality titanium containing oxide films. A method of forming a titanium based layer or film according to the present invention includes depositing a layer of titanium containing oxide by pulsed-DC, biased reactive sputtering process on a substrate. In some embodiments, the layer is TiO2. In some embodiments, the layer is a sub-oxide of Titanium. In some embodiments, the layer is TixOy wherein x is between about 1 and about 4 and y is between about 1 and about 7. In some embodiments, the layer can be doped with one or more rare-earth ions. Such layers are useful in energy and charge storage, and energy conversion technologies.

摘要翻译： 通过脉冲DC偏置的反应溅射工艺从含钛靶材沉积高密度氧化物膜以形成高质量的含钛氧化物膜。 根据本发明的形成钛基层或膜的方法包括通过脉冲DC偏压反应溅射工艺在衬底上沉积含钛氧化物层。 在一些实施方案中，该层是TiO 2。 在一些实施方案中，该层是钛的亚氧化物。 在一些实施方案中，该层为TixOy，其中x为约1至约4，y为约1至约7.在一些实施方案中，该层可掺杂一种或多种稀土离子。 这些层在能量和电荷存储以及能量转换技术中是有用的。

公开(公告)号：US07238628B2

公开(公告)日：2007-07-03

申请号：US10851542

申请日：2004-05-20

申请人： Richard E. Demaray ,  Hong Mei Zhang ,  Mukundan Narasimhan ,  Vassiliki Milonopoulou

发明人： Richard E. Demaray ,  Hong Mei Zhang ,  Mukundan Narasimhan ,  Vassiliki Milonopoulou

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/7687 ,  C23C14/0036 ,  C23C14/083 ,  C23C14/345 ,  H01L21/2855 ,  H01L21/31604

摘要： High density oxide films are deposited by a pulsed-DC, biased, reactive sputtering process from a titanium containing target to form high quality titanium containing oxide films. A method of forming a titanium based layer or film according to the present invention includes depositing a layer of titanium containing oxide by pulsed-DC, biased reactive sputtering process on a substrate. In some embodiments, the layer is TiO2. In some embodiments, the layer is a sub-oxide of Titanium. In some embodiments, the layer is TixOy wherein x is between about 1 and about 4 and y is between about 1 and about 7. In some embodiments, the layer can be doped with one or more rare-earth ions. Such layers are useful in energy and charge storage, and energy conversion technologies.

公开(公告)号：US06613199B1

公开(公告)日：2003-09-02

申请号：US10033165

申请日：2001-10-25

申请人： Jeffrey A. Tobin ,  Jean Qing Lu ,  Thomas Mountsier ,  Hong Mei Zhang

发明人： Jeffrey A. Tobin ,  Jean Qing Lu ,  Thomas Mountsier ,  Hong Mei Zhang

IPC分类号： C23C1435

CPC分类号： H01J37/3405

摘要： A hollow cathode magnetron comprises an open top target within a hollow cathode. The open top target can be biased to a negative potential so as to form an electric field within the cathode to generate a plasma. The magnetron uses at least one electromagnetic coil to shape and maintain a density of the plasma within the cathode. The magnetron also has an anode located beneath the cathode. The open top target can have one of several different geometries including flat annular, conical and cylindrical, etc.

摘要翻译： 空心阴极磁控管包括空心阴极内的开放顶部靶。 敞开的顶部靶可以被偏压到负电位，以便在阴极内形成电场以产生等离子体。 磁控管使用至少一个电磁线圈来形成并保持阴极内的等离子体的密度。 磁控管还具有位于阴极下方的阳极。 敞开的顶部目标可以具有几种不同的几何形状之一，包括平的环形，圆锥形和圆柱形等。