Quantum dot infrared photodetector apparatus
    2.
    发明申请
    Quantum dot infrared photodetector apparatus 有权
    量子点红外光电探测器

    公开(公告)号:US20100117060A1

    公开(公告)日:2010-05-13

    申请号:US12453088

    申请日:2009-04-29

    IPC分类号: H01L31/0352

    摘要: The present invention is disclosed that a device capable of normal incident detection of infrared light to efficiently convert infrared light into electric signals. The device comprises a substrate, a first contact layer formed on the substrate, an active layer formed on the first contact layer, a barrier layer formed on the active layer and a second contact layer formed on the barrier layer, wherein the active layer comprises multiple quantum dot layers.

    摘要翻译: 公开了能够正常入射检测红外光以有效地将红外光转换为电信号的装置的本发明。 该器件包括衬底,形成在衬底上的第一接触层,形成在第一接触层上的有源层,形成在有源层上的阻挡层和形成在阻挡层上的第二接触层,其中有源层包括多个 量子点层。